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Title: Future Projects on MI Instrument


1
Future Projects on MI Instrument
  • May 1, 2006

2
Ultimate Goal
  • While experiments done on our UHV/LT STM provide
    great insight into chemical systems, the
    operating conditions are not practical for real
    world application.
  • The advantages of the MI instrument is that it
    works in an ambient environment (i.e. room temp.
    and at 1 atm.), which allows for easy application
    to industrial processing conditions.

3
In situ STM
  • We are unable to achieve atomic resolution
    (except for HOPG) on the MI instrument due to the
    ease with which the metal surface can become
    contaminated in air (hydrocarbons and water).
  • Sonnenfield and Hansma in 1986 were the first to
    use STM to study a surface immersed in a liquid.1
  • In 1990, Magnussen et al. achieved atomic
    resolution on a metal surface.1

Figure from Ref. 2
4
Development of In Situ STM
  • Depended on three advances1
  • The development of the STM by Binnig and Rohrer
  • The development of surface preparation methods in
    ambient conditions.
  • The development of methods and materials to coat
    the STM tip and to couple the STM with a
    biopotentiostat.
  • This technique provides information on surface
    processes such as phase transitions in adlayers
    on a molecular and atomic level.

5
Comparing UHV and In Situ Images of Au
(herringbones)
Image of Au(111) under UHV
Image of Au(111) under 0.1 M HClO4 solution1
6
Comparing UHV and In Situ Images of Au (atomic
res.)
Image of Au(111) under UHV
Flame-annealed Au(111) under clean mesitylene3
7
Comparing Ambient and In Situ Images of HOPG
Image of HOPG in air File 3-9-06HOPG009
Image of HOPG under phenyloctane2
8
Comparing Ambient and In Situ Images of Molecules
on Au
C10, C12 SAM on Au(111) in air File
3-15-06AuMicaSAMVap028
L-cyseteine molecules on Au(111) under
perchlorate solution4
9
Electrochemistry in STM
  • Schematic of a sample molecule coadsorbed with
    reference molecules on a substrate as probed by
    an STM tip.
  • RE and CE represent the reference and counter
    electrodes, respectively.
  • Vsub and Vbias are the substrate potential (with
    respect to the reference electrode) and the
    tip-substrate bias voltage, respectively, which
    are controlled independently by a bipotentiostat.5

10
Electrochemistry in STM
  • Because the charge transfer event central to
    electrochemical reactivity occurs within a few
    atomic diameters of the electrode surface, the
    detailed arrangement of atoms and molecules at
    this interface strongly controls the
    corresponding electrochemical activity1.
  • Cycling the potential causes significant changes
    in the surface topography, from changing how
    molecules adsorb to the surface to causing
    reconstructions of the metal atoms themselves.

11
Insulating Tips
  • Because the faradaic background from a bare metal
    wire immersed in solution can approach several
    milliamps of current while tunneling currents are
    typically on the order of nanoamps, the STM tip
    must be insulated.
  • The tip is insulated by coating all but the very
    end with an insulator so that the tunneling
    current will not be overcome by the
    electrochemical background.1
  • A variety of materials may be used to coat the
    tip, specifically wax and nail polish.

12
Tip Etching
  • Extremely sharp tips with low aspect ratios are
    prepared by chemically etching the tip in a 1 M
    basic solution (KOH).
  • The etching current, which depends on the area of
    immersed wire and applied voltage is adjusted to
    an initial value.
  • This process produces a neck shape near the
    air-solution interface.6

13
Tip Etching
  • As the etching proceeds, the neck-like region
    becomes thinner and thinner, and eventually the
    lower portion drops off.
  • This causes an abrupt decrease in the current.
  • A very sharp tip with a small protrusion at the
    end can be made by switching off the circuit as
    the current abruptly drops.6

14
Wax Insulation of Tips
  • Most common method uses Apiezon-brand wax
  • The sharp etched tips are mounted vertically on a
    manipulator.
  • A copper plate is heated and used to melt the
    wax.
  • A rectangular slit in the plate provides a
    temperature gradient for the melted wax.
  • The tip is brought from underneath the slit by
    means of the manipulator.6

15
Wax Insulation of Tips
  • The tip is first moved slowly into the hot wax
    and allowed to attain a thermal equilibrium and
    uniform wetting.
  • The tip is then raised through the wax and
    allowed to break the top surface region of the
    melt.
  • The tip is moved sideways out of the slit so as
    to leave the very end of the tip unperturbed.6

16
Procedure for Wax Insulation of Tips
From Ref. 6
17
Images of Wax Coated Tips
SEM image of EC STM tips, insulated with double
(a) and single (b) pulling methods7
18
Nail Polish Insulation of Tips
  • Multiple articles cited using nail polish to coat
    their tips, however the exact coating procedure
    could not be found.

19
Reconstructions
  • Metal surfaces in UHV reconstruct in order to
    minimize their surface energy.
  • The extent of reconstruction is strongly
    dependent on the work function of the metal.
  • The electrochemical environment offers an
    opportunity to systematically vary the electronic
    state of a surface, through the application of
    potential and the influence of adsorbed species
    in solution.1

20
Adsorption
  • Adsorption induces changes in the work function
  • modifications of the surface dipolar layer
  • particularly if significant charge transfer
    occurs between the adsorbate and surface
  • measurements of ?F yield critical information on
    the degree of charge reorganization upon
    adsorption
  • ?? ?adsorbate covered - ?clean

21
Au Reconstructions
  • Reconstructions can be removed electrochemically
    by placing the electrode at sufficiently positive
    potential.
  • The removal of reconstruction can be attributed
    to the adsorption of electrolyte anions at higher
    potentials.
  • Cycling the potential to a region where the
    herringbone reconstruction is removed and then
    back reveals changes in the shape of the step
    edges on the surface, showing that the extra
    material required in the compressed structure is
    taken from and returns to the step edges.1

22
Images of Au Reconstructions
Typical Au(111) 23 X v3 reconstruction pattern.
The image was obtained for Au under pure water at
0 mV.8
Typical image of Au(111) after the
transformation. The image was obtained for Au
under water after the surface potential was
raised to 400 mV.8
23
Sulfate on Au (111)
  • Sulfate is known to form a (v3 x v7)R19.1
    structure on Au(111)
  • The coadsorption of H3O ions is necessary to
    stabilize the ordered oxoanion adlattices.
  • Both species in H2SO4, sulfate (10) and
    bisulfate (90) have 3 free oxygen atoms to
    interact with the surface. The distance between
    them (2.47 Å) is of the same order of magnitude
    as the distance between Au atoms (2.88 Å), so
    their geometrical arrangement matches that of the
    Au (111) surface.9

24
Sulfate on Au (111)
  • The reason for the presence of non-uniform
    anion-anion distances is the formation of
    H-bridge bonds between the oxygen atoms of the
    oxoanions and the coadsorbed H3O ions.9

25
Images of Sulfate on Au(111)
  • In situ STM image (10x10 nm2) of a Au(111)
    electrode in 0.1 M H2SO4 showing both the (v3 x
    v7)R19.1 sulfate structure, (upper and lower
    parts) and the (1x1) substrate (middle part).
  • The potential was switched from 0.80 to 0.65 V
    and then back to 0.80 V at the points marked by
    the arrows.
  • The triangles and circles drawn on the middle
    part of the image represent the positions of the
    sulfate and hydronium ions, respectively.9

26
Images of Sulfate on Au(111)
  • (B) Model of the(v3 x v7)R19.1 sulfate structure
    on Au(111) in 0.1 M H2SO4
  • The H3O ions are placed on top of the Au atoms.
  • Every H3O adsorbed can form 3 H-bridge bonds
    with the oxygen atoms of surrounding sulfate
    ions.9

27
Intro. To Cyclic Voltammetry
  • The voltage is swept between two values at a
    fixed rate, when the voltage reaches V2 the scan
    is reversed and the voltage is swept back to V1.11

28
Intro. To Cyclic Voltammetry
  • In the forward sweep, as the voltage is swept
    further to the right (to more reductive values) a
    current begins to flow and eventually reaches a
    peak before dropping. To rationalize this
    behavior we need to consider the influence of
    voltage on the equilibrium established at the
    electrode surface. If we consider electrochemical
    reduction, the rate of electron transfer is fast
    in comparison to the voltage sweep rate.11 (i.e.
    Fe3 ? Fe2)

29
Intro. To Cyclic Voltammetry
  • When the scan is reversed we simply move back
    through the equilibrium positions gradually
    converting electrolysis product back to
    reactant.(Fe2 ? Fe3) The current flow is now
    from the solution species back to the electrode
    and so occurs in the opposite sense to the
    forward sweep.11

30
Cyclic voltammogram of Au(111) in 0.1 M H2SO4
  • The peak at 0.55 V is attributed to the lifting
    of the (23 x v3) reconstruction that takes place
    in the lower potential region.
  • The two sharp peaks around 1.0 V are due to the
    formation of an ordered sulfate structure at more
    positive potentials.10

31
Underpotential Deposition
  • The electrodeposition of a metal on a foreign
    metal at potentials less negative than the
    equilibrium potential of the deposition reaction.
    Such a process is energetically unfavorable and
    it can occur only because of a strong interaction
    between the two metals, with their interaction
    energy changing the overall energetics to
    favorable. Consequently, only one (very seldom
    two) monolayer can be deposited this way, and
    this is a very convenient way to produce
    well-controlled monolayer deposits.12

32
Underpotential Deposition
  • Upd monolayers are formed by the deposition of
    low work function metals onto high work function
    metals.
  • The monolayer originates from a relatively strong
    adatom-substrate bond formed using less energy
    than required for adatom-adatom bonds formed
    during bulk deposition.
  • One of the most intriguing aspects of upd is the
    anion dependence, which derives from coadsoprtion
    of the anion and the adatom.1

33
Underpotential Deposition of Cu on Au (111)
  • One of the first examples of atomic resolution in
    the electrochemical environment was Cu monolayers
    on Au (111) in H2SO4.
  • Three different structures are seen before bulk
    Cu deposition.1

34
Images of Underpotential Deposition of Cu on Au
(111)
  • At positive potentials (300 mV), the bare
    Au(111) surface is seen.1

35
Images of Underpotential Deposition of Cu on Au
(111)
  • Ordered adlayer with (v3 x v3)R30 structure,
    ascribed to coadsorbed sulfate.
  • Formed between 200 and 100 mV.1

36
Images of Underpotential Deposition of Cu on Au
(111)
  • Full Cu monolayer in registry (1x1) with
    Au(111).1
  • At 5 mV

37
Underpotential Deposition of Cu on Au (111)
  • Different solutions of anions give rise to
    different structures on the electrode surface.
  • Cl- anions form both (2 x 2) and (5 x 5)
    incommensurate structures depending on the conc.
    of the anion.
  • On other low Miller index faces of Au, Cu does
    not exhibit the pronounced dependence on the type
    and conc. of anion.1

38
Conclusions
  • In situ STM allows for atomic resolution under
    ambient conditions.
  • Electrochemical STM can be used to understand the
    electrochemical double layer and to correlate
    detailed structure of the electrode surface with
    the double-layer structure and ultimately with
    electrochemical response.
  • Studies of the upd processes reveal a rich
    structural and reactive chemistry, the detailed
    nature of which is dependent on potential,
    available anions, substrate orientation, and
    substrate identity.1

39
References
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  • Han, W. Li, S. Lindsay, S. M. Gust, D. Moore,
    T. A. Moore, A. L. Langmuir. 1996, 12,
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