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Analytical Thermal Placement for VLSI Lifetime Improvement and Minimum Performance Variation

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Circuit lifetime Tf decreases superlinearly with rising temperature. Hot carriers ... Thermal Effects on Circuit Lifetime. Previous Thermal Placers. Objective: ... – PowerPoint PPT presentation

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Title: Analytical Thermal Placement for VLSI Lifetime Improvement and Minimum Performance Variation


1
Analytical Thermal Placementfor VLSI Lifetime
Improvement and Minimum Performance Variation
Andrew B. Kahng, Sung-Mo Kang, Wei Li, Bao
Liu UC San Diego UC Santa Cruz
2
Outline
  • Background
  • Modeling and Theoretical Results
  • Analytical Thermal Placement
  • Experiment
  • Summary

3
VLSI On-Chip Temperature Scaling
Courtesy, Intel
4
Temperature Scaling Why and How
  • Scaling has led to temperature rise in VLSI
  • Higher integration
  • Higher clock frequency
  • Leakage power
  • Cooling techniques are stagnant
  • Air ventilation
  • Liquid cooling
  • Low power design
  • Power gating, clock gating, dynamic scheduling
  • Placement

5
Chip Packaging Structures
  • Heat dissipation through bulk silicon in wire
    bond packaging
  • Devices and interconnects closer to heat sinks in
    flip chip packaging

6
Heat Dissipation Equations
  • Dynamic
  • Static
  • From Boltzmanns Equation
  • p ( r ) power density
  • g ( r ) thermal conductivity
  • Poissions Equation
  • Purely Resistive Network
  • Electrical analogue RC Circuit
  • Thermal conductance G
  • Heat capacity C

7
Thermal Effects on Performance
  • Higher temperature ?
  • Superlinear decrease of carrier mobility
  • Linear decrease of transistor threshold voltage
  • Increase or decrease of transistor output current
    depending on transistor threshold voltage, supply
    voltage, etc.
  • Increase of interconnect resistance

8
Thermal Effects on Circuit Lifetime
  • Circuit lifetime Tf decreases superlinearly with
    rising temperature
  • Hot carriers
  • Oxide breakdown
  • Electromigration
  • where
  • J current density
  • Q activation energy (1.0eV for copper)
  • k Boltzmann constant
  • T temperature
  • D given by device structure

9
Previous Thermal Placers
  • Objective
  • Total on-chip temperature1
  • Maximum on-chip temperature23
  • Method
  • Simulated annealing34
  • Min-cut bi-partition1
  • Thermal simulation
  • Compute thermal resistance matrix at each
    iteration134
  • Chao and Wong, Thermal placement for high
    performance multichip modules, ICCD, 1995
  • Chu and Wong, A matrix synthesis approach to
    thermal placement, ISPD, 1997
  • Cong, Wei, and Zhang, A thermal-driven
    floorplanning algorithm for 3D IC, ICCD, 2004.
  • Tsai and Kang, Cell-level placement on improving
    substrate thermal distribution, IEEE Trans. CAD,
    2000

10
Outline
  • Background
  • Modeling and Theoretical Results
  • Analytical Thermal Placement
  • Experiment
  • Summary

11
Thermal Modeling
  • ? FDM (Finite Difference Method)
  • ? MOR (Model Order Reduction)
  • ?

Heat source
Boundary thermal resistor
12
Objective and Complexity
  • Placement for minimum on-chip temperature at a
    specific spot is linear
  • How to locate current sources s.t. Vo is
    minimized?
  • Solved by greedy algorithm
  • Locate maximum current source with minimum
    resistance

13
Objective and Complexity
  • Placement for minimum average on-chip temperature
    is linear
  • How to locate current sources s.t. SiVi is
    minimized?
  • Solved by greedy algorithm
  • Locate maximum current source with minimum
    resistance

14
Objective and Complexity
  • Placement for minimum maximum on-chip temperature
    is NP-hard
  • Reduces to the bi-partition problem
  • Given
  • we have

i1,2 and i,j on the same side
otherwise
15
Outline
  • Background
  • Modeling and Theoretical Results
  • Analytical Thermal Placement
  • Experiment
  • Summary

16
Problem Formulation
  • Given
  • Chip dimensions 0ltxlta, 0ltyltb, 0ltzltd
  • Thermal parameters
  • Thermal conductivity k on chip top
  • Thermal conductivity kN on chip bottom
  • Effective heat transfer coefficient h on chip
    bottom
  • Ambient temperature Tr
  • Cells C of power consumption P
  • Netlist N
  • Find a cell placement which minimizes sum of
    total wirelength and maximum temperature

17
Analytical Placement
  • Approximate the NP-hard placement problem as a
    nonlinear optimization problem
  • Relax the non-overlapping constraint into a cell
    density unevenness penalty function
  • Minimize

relax
legalize
18
Cell Density Distribution
  • A cell centered at (xc,yc) of width w and height
    h distributes its area over a grid of points
    (x,y)
  • where

Cell density
Cell density
1
1
r
-r/2
r/2
x
-r/2
x
r/2
-r
19
Smooth Wirelength Function
  • Half perimeter wirelength
  • Approximate min/max by logarithm of sum of
    exponents

20
Analytical Thermal Placement
  • Minimize
  • where
  • A, b, g are such that terms are comparative
  • G-1 does not change during placement iteration

21
Congestion Penalty Function
  • Minimize
  • where
  • If congested sharper increase of penalty ?
    stricter enhancement
  • If not congested no penalty ? more relaxed

22
Outline
  • Background
  • Modeling and Theoretical Results
  • Analytical Thermal Placement
  • Experiment
  • Summary

23
Experiment Setting
  • We compare analytical thermal placement to
    thermal effect oblivious analytical placement
    APlace
  • Two industry design test cases of gate array
    logic in 130nm and 180nm technologies

Utilization
Total Power
Technology
rows
blocks
cells
design
0.60
10.0W
130nm
129
0
13397
I
0.43
10.0W
180nm
251
5
7128
II
24
Thermal Placement Data Flow
Chip Dimensions Material, Boundary Conditions
Netlist
Thermal Simulation
Power Profile
Thermal Resistances
Analytical Thermal Placement
Temperature Reduction
25
A Snapshot of Placement Result
26
Analytical Thermal Placement vs. Traditional
Analytical Placement
Test case I 130nm industry design of13K
cells
Placer
HPWL CPU
Max Temp
g
(s)
()
(mm)
()
(K)
APlace
250.15
100.00
504.80
100.00
12.10
0.00
ATP
718.53
92.19
465.35
97.47
11.33
0.00
636.13
92.47
466.78
92.23
11.16
0.02
800.52
95.39
481.54
82.15
9.94
0.10
Test case II 180mm industry design of 7K
cells
Placer
HPWL CPU
Max Temp
g
(s)
()
(mm)
()
(K)
APlace
211.37
100.00
923.55
100.00
2.73
0.00
ATP
204.94
98.06
905.62
109.52
2.99
0.00
496.91
98.03
905.34
99.63
2.72
0.02
507.94
99.55
919.42
69.23
1.89
0.10
27
Outline
  • Background
  • Modeling and Theoretical Results
  • Analytical Thermal Placement
  • Experiment
  • Summary

28
Summary
  • We propose analytical thermal placement and
    achieve 17.85 and 30.77 maximum on-chip
    temperature variation reduction and 4.61 and
    0.45 wirelength reduction compared with the
    existing analytical placement for the two
    industry designs, respectively
  • We present theoretical results on the complexity
    of specific spot temperature, average on-chip
    temperature, and maximum on-chip temperature
    minimum placement as linear, linear, and NP-hard
  • Future directions
  • Thermal effect aware performance optimization
  • 3-D thermal placement

29
Thanks for your attention!
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