Attempts%20to%20deposit%20Nb3Sn%20by%20sputtering

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Attempts to deposit Nb3Sn by sputtering and
diffusing multilayers of Nb and Sn
S. Deambrosis, G. Keppel, V. Palmieri, N. Patron,
R.G. Sharma
Thin films and new ideas for pushing the limits
of RF superconductivity, Legnaro 9-12 October 2006
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Experimental setup sputtering

• Balanced Magnetron sources
• Target-Substrate distance 60 mm
• 2 inches target diameter

Thin films and new ideas for pushing the limits
of RF superconductivity, Legnaro 9-12 October 2006
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Thin film grown
Condition of deposition
P base 1.5x10-6 mbar P sputtering 4.0x10-3
mbar
Sputtering Target Voltage (V) Current (A) Power (W)
Sn 613 0.18 108
Nb 407 1.99 800
Thickness Nb 4.5 Thickness Sn

• Time of sputtering
• 2 minutes Nb
• 30 minutes multilayers deposition
• 2 minutes Nb

1 turn of sample every 13 seconds
Annealed after sputtering for 3 hours at 975 C
Thin films and new ideas for pushing the limits
of RF superconductivity, Legnaro 9-12 October 2006
4
Results X-ray diffraction
Thin films and new ideas for pushing the limits
of RF superconductivity, Legnaro 9-12 October 2006
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Results Superconductive characteristic
Tc 16.98 K
DTc 0.23 K
RRR 2.13
Thin films and new ideas for pushing the limits
of RF superconductivity, Legnaro 9-12 October 2006
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Thanks for your patience
Thin films and new ideas for pushing the limits
of RF superconductivity, Legnaro 9-12 October 2006
7
Nb3Sn Phase diagram
Thin films and new ideas for pushing the limits
of RF superconductivity, Legnaro 9-12 October 2006