Title: Modeling and Simulation for Power Electronics and Electrical Drives
1Modeling and Simulation for Power Electronics and
Electrical Drives
Haus der Technik, München, 2003
- dr. ir. P.J. van Duijsen Simulation Research
2Contents
- I - Introduction
- II - Components
- III - Models
- IV - Simulation
- V - Special models
- VI - Tools
- VII - Examples
- VIII - Conclusions
3I - Introduction
- Identify the components
- Models
- Parameters
4Identify the components
- Different components require different models
- First identify these components
5Models
- What can we model
- Complexity of the model
- Availability of parameter
6Parameters
- What is a model
- Reflection of the users imagination, how a design
should work
7II - Components
- Power Electronics
- Electrical machine
- Mechanical load
- Main
- Control
8III - Models
- Multilevel Modeling
- Circuit model
- Block Diagram
- Modeling language
9IV - Simulation
- What is simulation
- Mathematical methods
- Programs
10What is Simulation
- Simulation is a prediction of what might happen
11What can we simulate
- Large simulations take a lot of time
- Large simulations increase complexity and clarity
12Methods and Programs
- Mathematical methods
- State Space
- DAE
- MNA
- Various programs
- Spice
- Matlab/Simulink
- Saber
- Caspoc
13Mathematical Methods
- ODE (State Space)
- Causal time varying systems
- MNA
- Circuit models
- DAE
- Equations
- Mathematics
14Various programs
- Spice
- Electronics (General)
- Matlab/Simulink
- Systems described by a Block Diagram (General)
- Saber
- Systems described by equations (General)
- Caspoc
- Systems and Circuits (PE ED)
15V - Special models
- Power Electronics
- Semiconductor models
- Heat sink
- Parasistics
- Analog / digital control
- Embedded control
- Electrical Machines
- Machine models
- Mechanical load
16Semiconductor models
- Mosfet / IGBT
- Gate charge
- Cgd non-linear behavior
- Temperature dependent On-resistance Rds
- Diode
- Reverse recovery
17Mosfet / IGBT Dynamics
- Non linear gate-drain capacitance Cgd
18Temperature dependence Mosfet
- At T125 Celcius, the drain-source resistance is
doubled from Ron to 2Ron
19Spice diode model
- Reverse recovery is modeled by a non-linear
capacitor
20Reverse recovery modeling
- Model based on measurement
21Reverse recovery
- Reverse recovery is dependent on IF and di/dt
22Heat sink models
- Parameters from data sheet
- Parameters from known structures
- Parameters from FEM analysis
23Parameters from a data sheet
- Thermal resistance and thermal capacitance are
from the manufacturers data sheet - Zth is modeled using parallel RC models
- Calculate losses in the mosfet and diode
- Calculate temperature and feed back into the
semiconductors
24Parameters from know structures
- Calculate Rth Cth from geometry
25Parameters from FEM analysis
- Calculate Zth in FEM analysis and use it in the
simulation
26Parasitic inductance
- Model parasitic inductance for simulating high
turn-off voltages Vds
27Analog / Digital control
- Analog control as
- Electric circuit using Opamp models
- Block diagram (more efficient)
- Digital control
- Logical components
- Modeling language (more efficient)
28Block diagram vs Circuit model
- Block diagram model for a PI control
- 4 blocks
- Calculation effort 4
29Block diagram vs Circuit model
- Circuit model for the PI control
- No. of nodes 17 - 4
- Calculation effort (4/3) (13)3
30Using C/Pascal to create models
- Replace blocks by C/Pascal code
- Model complex control systems
- Use the debugger to debug these models
31Embedded Control
32Machine models
- Connections
- Electrical properties
- Mechanical properties
- Model
- State Space equations
- Lumped circuit model
- Reduced Order Model from FEM analysis
33VI - Tools
- Integrated Modeling and Simulation
- Modeling Electrical machines
- Connection to FEM tools
- Modeling Power Electronics
- Connection to Packaging analyzers
- Modeling Control
- Creating Embedded C code
- Control design
- Small signal modeling
- Connection to design tools
34VII - Example
- Synchronous generator
- PWM induction machine drive
- Switched Reluctance Machine
- Variable structure system in Caspoc and Simulink
35Example - Synchronous machine
36Example - PWM induction machine drive
37Example - Switched Reluctance machine
- Electric connections
- u,I
- Mechanical connect.
- T,angular speed
38Example - Variable structure system in Caspoc
and Simulink
- Caspoc
- Inverter
- Machine
- Load
39Example - Variable structure system in Caspoc
and Simulink
- Simulink
- VSS Control
- Comparison switched Caspoc model with averaged
model in Simulink
40Example Switched Reluctance Machine (SRM)
- Design of the SRM in Tesla
- FEM analysis of the SRM in ANSYS
- Reduced order model from ANSYS in Caspoc
- Design of the power electronics and control in
Caspoc - Export of the control algorithm to Embedded
C-code for the microprocessor
41Geometric design in Tesla
42FEM analysis in ANSYS
43Complete model and simulation in Caspoc
44Embedded C-code for the control
45Conclusions - SRM
- Export of C code from Block diagram
- Including the exported code in the simulation
- Debugging during simulation
46VIII - Conclusions
- A model is a reflection of the users imagination,
how a design should work! - Simulation is a prediction of what might happen!