Title: Dynamic Power Noise Analysis Method for Memory Designs
1Dynamic Power Noise Analysis Method for Memory
Designs
- Chanseok Hwang, Changwoo Kang, Bosun Hwang Joonho
Choi, Moonhyun Yoo - CAE Team, Semiconductor Research Center Samsung
Electronics
2Outline
- Memory Design Overview
- Memory Core Operations
- Our approach
- Memory Core Circuit Modeling
- Power Grid Creation and Reduction
- Simulation Results
- Conclusions
3Memory Design Overview
- Power noise increasingly affects circuit
robustness - Low VDD (lt 1.0V), High Speed (gt2GHz)
- Challenges in power noise analysis
- Modeling of huge power network
- Long simulation times
An Example of DRAM Fullchip Power Grid
4DRAM Core Operations
- Core AC parameters Sensing/Restore Time
- Highly sensitive to power noises Voltage margin
and Operation speed
VDD
VCELL
VCELL 1.125(90 VDD)
LAB
VBL
WL
VBL500mv
BL
LAB
BLB
Sensing time
VSS
LA
Restore time
Sense amplifiers with power networks
Simulation waveforms of sensing operation
5Our Approach
- Current Source Model (CSM)
- Core sub-array block is replaced by a current
source - Multi-banks operation can be simulated
- Power Network Generation Reduction
- Memory core power network is generated
automatically - MOR technique is adopted efficiently
6Current Source Modeling
7Multiple-Bank Operations
Activate Bank H
Activate Bank F
A
C
E
G
A
C
E
G
7ns
B
D
F
H
B
D
F
H
Activate Bank B, C, F, G
Activate Bank A, D, E, H
A
C
E
G
10ns
B
D
F
H
current sources
circuits
8Our Approach
- Current Source Model (CSM)
- Core sub-array block is replaced by a current
source - Multiple-Bank Operation Modeling
- Power Network Generation Reduction
- Memory core power network is generated
automatically in early design stages - MOR technique is adopted efficiently
9Power Network Generation Reduction
Automatically Generated Power Network
amp
amp
amp
amp
pad
amp
amp
amp
amp
amp
amp
Power Network Generation GUI
Reduced Power Network
10Power Noise Verification Flow
Active Circuits
Current Sources
Power Network Creation
Simulation Waveform
Circuit connection to power network
Circuit Simulation
Voltage Drop Map Viewer
Verification
Fail
11Simulation Results
- Example Circuit 1G DRAM
- Sensing Restore Time Comparisons
- Simulation Time and Accuracy for the Proposed
Power Network Model - Single Bank vs. Multiple Bank Operations
12Results Analysis of different power networks
Original Power Network Modeling (OPN) Proposed Power Network Modeling (CSM) Rate (OPN/CSM)
Num. Resistor 2,316,868 493,943 4.69
Num. Capacitor 1,307,124 66,515 19.65
Run time (h) 35.3 2.3 15.35
Sensing time (ns) 1.059 1.053 1.01
Restore time (ns) 11.643 12.625 0.92
- Run-Time 15.3X reduction
- Accuracy Error 1 in Sensing, 8 in Restore time
13Simulation Results
- We could get this results by using the proposed
method.
14Conclusions
- Current Source-based Model is proposed for the
power noise analysis of memory circuits. - Based on the hierarchical memory core array
structure - The method of automatic generation and reduction
of power networks at design early stage is
suggested. - In Simulation Results 1G DRAM
- Simulation time reduction gt 15X
- Analysis error lt 8
- Due to the reduced complexity the simulation of
multiple-bank operations was possible.
15Thank You!