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Sonnet Workshop EuMW 2003

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Title: Sonnet Workshop EuMW 2003


1
  • Sonnet Workshop EuMW 2003
  • Munich
  • Sonnet Software Inc.
  • and
  • Dr. Mühlhaus Consulting Software GmbH

2
Agenda
Part 1 Introduction to the Sonnet 3D Planar
Electromagnetic (EM) Analysis Suite
Break Part 2 Using Sonnet with AWR Microwave
Office. Using Sonnet with Agilent
ADS. Break Part 3 Recent Advances in Planar
EM Simulation Adaptive Band Synthesis
(ABS) and Conformal Meshing.
3
  • Introduction to
  • Sonnet Professional
  • Release 9
  • Dr.-Ing. Michael Reppel
  • Dr. Mühlhaus Consulting Software GmbH

4
Sonnet Professional 9 Basic Concepts
5
Field Simulation vs. Circuit Simulation (1)
  • Circuit Simulation
  • cascading of single models / elements
  • advantage very fast
  • disadvantage limited to available models,
    limited parameter values

6
Field Simulation vs. Circuit Simulation (2)
  • Field Simulation
  • no models, no parameter limitation
  • arbitrary structures can be analyzed
  • advantage more accurate and flexible than
    models
  • disadvantagemore complex and slower simulation

7
Field Simulation vs. Circuit Simulation (3)
  • Useful Strategy
  • combination of circuit and field simulation
  • co-simulation of passive and active components
  • tuning elements can be added for fast tweaking

8
2D, 3D planar Full 3D Simulation








2D

3D

3D Planar


Cross Section
Volume

FlexPDE

Sonnet

Microwave Studio

Quickfield

Momentum

HFSS

LINPAR

Ensemble

Empire




Surface mesh
Volume mesh
9
(No Transcript)
10
Method of Moments (MoM) (1)
  • Step 1 For N subsections, fill NxN matrix with
    couplings between every possible pair of
    subsections.
  • Step 2 Invert matrix.

11
Method of Moments (MoM) (2)
  • Each matrix element is the coupling from one
    subsection to another.
  • In other words, the total voltage over the area
    of subsection j due to current over the total
    area of subsection i.

12
Method of Moments (MoM) (3)
  • Each matrix element requires a 4-D integration
  • Integrate twice over (x, y) of the source
    (current carrying) subsection.
  • Integrate twice again over (x, y) of the field
    (voltage) subsection.

x
y
x'
y'
13
Shielded vs. Open
  • Shielded Coupling between subsections is a
    simple sum of sines and cosines.
  • 4-D integration is done term by term exactly.
  • No numerical integration, very robust and
    accurate.
  • Open Requires 4-D numerical integration of
    highly singular kernel for every element in the
    NxN matrix.
  • Lacks robustness and accuracy, especially when
    pushing limits.

14
Open Environment
  • Difficulty with limit situations like
  • Thin dielectric layers (especially more than
    one).
  • Dielectric loss (especially silicon).
  • Ground plane loss.
  • Small subsection size.
  • Large numbers of subsections.
  • Low frequency.
  • Small magnitude S-parameters (noise floor).
  • Resonant situations.
  • Error from a few percent to unusable data.
  • Principle advantage arbitrary subsection size.

15
Shielded Environment
  • Boundary condition given by closed metallic box.
  • Four side walls ideally conducting, cover and
    bottom metallization is arbitrary.
  • FFT requires circuit to fall on snap grid.
  • Sum of cosines and sines evaluated with FFT
    Fast and accurate. All matrix elements
    calculated to full numerical precision.

16
Discretization in 3D planar Method of Moments
solver
All metallization layers must be discretized!
17
Discretization vs. Wavelength ? (1)
The discretization must consider the maximum
guided wavelength to avoid high errors
18
Discretization vs. Wavelength ? (2)
  • Sonnet automatically limits maximum subsection
    size to safe value (if grid resolution allows)
  • Default value in Sonnet is safe ?/20

Advanced settings for power users!
19
Discretization of Details
  • Some details lt ?/20 are important
  • Skin effect edge current enhancement
  • High current densities at discontinuities

20
Automatic Mesh Generation
Cells are merged to larger subsections, but edges
and corners are detected - required memory is
reduced without losing accuracy.
21
Discretization of Arbitrary Shapes
  • Discretization of Non-Manhatten shapes is only
    approximate
  • Accuracy is not an issue, only efficiency - high
    number of subsections.
  • Coarse mesh is ok in many case
  • If in doubt, refine mesh for convergence test

22
New in Sonnet V9 Conformal Mesh - Efficient Mesh
for Round Polygons
Staircase Mesh 987 MB, 22 min/frequency
Conformal Mesh 10 MB, 35 sec/frequency
Significant reduction of memory requirements for
round spirals analyses
23
Conformal Mesh - Staircase Mesh Comparison of
Results (Spiral)
Almost identical results for conformal and
staircase meshing.
24
Meander Line with Conformal Mesh
Conformal1104 subs, 6 MB
Staircase 2237 subs, 20 MB
Significant reduction of memory requirements for
round meander lines
25
Conformal Mesh - Staircase Mesh Comparison of
Results (Meander)
Almost identical results for conformal and
staircase meshing.
26
Choosing the Cell Size
  • Compromise between accuracy and speed
  • Sonnet does not require numerical integration -
    low noise floor and numerically robust
  • Error converges to zero

27
The Sonnet Project Editor
28
Quick Start Guide
The Quick Start Guide (QSG) appears when you open
the project editor or select Help gt Quick Start
Guide from the project editor main menu. This
guide provides step by step directions in how to
create a circuit geometry in the project editor
29
Specifying of Dielectric Layers, Dielectric
Material Library
30
Specifying of Metal Types, Metal Type Library
31
Specifying of Cell and Box Size
32
The Project Editor Tool Box
Reshape move point(s)
Add point
Pointer select
Add donut
Add port
Add rectangular via
Add edge via
Add circular via
Via mode one up / one down / to GND
Draw rectangle with mouse
Draw polygon with mouse
Draw mode metal / brick
Shift mouse click means remain in mode
33
Entering the Design and Analysis Frequency Range
Input and Output Ports
Lossy 50 Ohm Line, 0.5mm x 16mm on 0.5mm thick
AlO2
34
Memory Estimation and Evaluating the Subsectioning
35
Performing an EM Analysis
36
Adaptive Band Synthesis (ABS) Sweep
  • Provides fine resolution response for an
    arbitrary frequency band - usually develops
    200-400 points
  • Adaptively selects minimum number of frequencies
    for full EM simulation
  • Internal solver information is used to synthesize
    high-confidence fine model
  • Can be used over bandwidths gt 100x

37
Evaluating the S-Parameters (50 Ohm Line)
Normalizing Impedance
38
Evaluating the S-Parameters (Non-50 Ohm Line)
Normalizing Impedance
39
Evaluating the Current Density Distribution
40
Sonnet Professional 9 Selected Topics
41
The Port Concept of Sonnet
  • All ports in Sonnet are two-terminal devices
  • The port terminals can be connected between two
    conducting elements metal polygons, box walls,
    vias
  • The port type is determined by where the
    terminals are connected to.

Equivalent circuit of a Sonnet port
42
Standard Box-Wall Ports
A standard box-wall port is a grounded port, with
one terminal attached to a polygon edge
coincident with a box wall and the second
terminal attached to ground.
43
Ungrounded-Internal Ports
A standard ungrounded-internal port is located in
the interior of a circuit and has its two
terminals connected between abutted metal
polygons.
44
Via Ports
A via port has one terminal connected to a
polygon on a given circuit level and the other
terminal connected to a second polygon on a
circuit level above the first polygon.
45
Automatic-Grounded Ports
An automatic-grounded port is a special type of
port used in the interior of a circuit. This port
type has one terminal attached to the edge of a
metal polygon located inside the box and the
other terminal attached to the ground plane
through all intervening dielectric layers.
46
Ports with Duplicate Numbers
Ports with identical port numbers are
electrically connected together push-push / even
mode ports.
47
Ports with Negative Numbers(Differential Ports)
The total current going into all the positive
ports with the same port number is set equal to
the total current going out of all the ports with
that same negative port number push-pull / odd
mode ports.
48
Ports with Negative Numbers(Coplanar Waveguide
Ports)
Coplanar lines can be represented by push-pull
ports
49
Parameterization of Geometries
50
Evaluating Parameter Sweep Results
51
Optimization of Geometries
52
Netlist Project Analysis
A netlist project contains a netlist which
consists of one or more networks with elements
connected together.
53
Cascading S-, Y- and Z-Parameter Data Files
The two-port S-parameters contained in file
att_res16.s2p are cascaded to obtain an overall
set of two-port S-parameters.
54
Inserting Lumped Elements or Measurements into a
Geometry (1)
With the help of internal ports lumped elements
or SNP files of measurements can be included in
the analysis.
55
Inserting Lumped Elements or Measurements into a
Geometry (2)
Using automatic-grounded ports The geometry file
contains sets of auto-grounded ports placed at
locations where modeled elements will eventually
be inserted.
56
Inserting Lumped Elements or Measurements into a
Geometry (3)
Using ungrounded-internal ports The geometry
file contains ungrounded-internal ports placed at
locations where modeled elements will eventually
be inserted.
57
Inserting Lumped Elements or Measurements into a
Geometry (4)
Using ungrounded-internal ports Ungrounded-intern
al ports do not have access to ground. Therefore,
only 1-port elements or 1-port networks may be
connected across ungrounded-internal ports (e.g.
resistors, capacitors, and inductors).
Using automatic-grounded ports Automatic-grounded
ports do have access to ground. Therefore,
N-port elements may be connected across a set of
automatic-grounded ports (e.g. transmission
lines).
58
Inserting Lumped Elements or Measurements into a
Geometry (5)
For expert users only including N-Port Elements
using ungrounded-internal ports Ungrounded-intern
al ports do not have access to ground. However, a
common reference can be used.
common reference
Note Port 3 is negative, Port 4 is positive !!!
SMD pads
59
Inserting Lumped Elements or Measurements into a
Geometry (6)
Note for expert users if a set of
ungrounded-internal ports with a common reference
is used, make sure the polarity of each port is
correct. This means that all ports must be
connected with the same terminal at the reference
metalization!
-
-


60
Using Internal Ports for Circuit Tuning (1)
An ungrounded internal port can be used to tweak
the element value of an inductor.
61
Using Internal Ports for Circuit Tuning (2)
Results for inductor tuning range -1nH to 1nH
(L1 at port 3)
62
Using Internal Ports for Circuit Tuning (3)
A via port can be used to tweak the element value
of a parallel plate capacitor.
63
Using Internal Ports for Circuit Tuning (4)
Results for capacitor tuning range -0.5pF to
0.5pF (C1 at port 3)
64
De-embedding (1)
  • Each port in a circuit introduces a discontinuity
    into the analysis. De-embedding removes this port
    discontinuity from the analysis results.
  • With de-embedding, reference planes may be
    shifted.
  • Within the de-embedding process the
    characteristic impedance Z0 and the effective
    dielectric constant Eeff of the feeding
    transmission line are determined.
  • The de-embedding option is switched on by
    default, but may be switched off.

65
De-embedding (2)
  • Standard box-wall ports, ungrounded internal
    ports and automatic-grounded ports can be
    de-embedded. In case of automatic-grounded ports
    the length of the via to ground is removed from
    the analysis result.
  • Via ports can not be de-embedded.

66
De-embedding Shifting Reference Planes
(1)
Transmission Lines
Port discontinuities and transmission lines at
the left and right are removed from the em
analysis results by enabling de-embedding.
Transmission Lines
67
De-embedding Shifting Reference Planes
(2)
  • Reference planes may be specified for standard
    box-wall ports and automatic-grounded ports
  • Reference planes can not be specified for
    ungrounded internal ports and via ports
  • Reference planes can be specified for coupled
    transmission lines. The coupling between the
    transmission lines is accounted for and removed.

68
De-embedding Benchmark Zero Length Coupled
Lines
The coupling between these transmission lines is
about -20dB. The reference planes are so
specified that the resulting coupling length is
zero. The de-embedding process removes the
coupling between the lines completely.
69
De-embedding Benchmark Results Zero Length
Coupled Lines
The de-embedding process removes the coupling
between the lines completely (noise floor level).
70
De-embedding Guidelines (1)
  • De-embedding Without Reference Planes
  • De-embedding does not require reference planes.
    Reference planes are optional for all standard
    box-wall and automatic-grounded ports.
  • Reference Plane Length Minimums
  • If the reference plane or calibration standard is
    very short relative to the substrate thickness or
    the width of the transmission line, em may
    generate poor de-embedded results.

71
De-embedding Guidelines (2)
  • Reference Plane Length Minimums
  • The port is too close to the device under test
    (DUT)
  • The first calibration standard is too short.

72
De-embedding Guidelines (3)
  • Reference Plane Lengths at Multiples of a Half-
    Wavelength
  • Eeff and Z0 cannot be calculated when the length
    of the reference plane or calibration standard is
    an integral multiple of a half wavelength.
  • Reference Plane Lengths Greater than One
    Wavelength
  • If the length of the reference plane or
    calibration standard is more than one wavelength,
    incorrect Eeff results might be seen. However,
    the S-parameters are still completely valid.

73
De-embedding Guidelines (4)
  • Non-Physical S-Parameters (1)
  • Extending the reference planes beyond a
    discontinuity in the circuit may result in
    non-physical S-parameters.

74
De-embedding Guidelines (5)
  • Non-Physical S-Parameters (2)
  • Box Resonances A structure which is inside a
    resonant cavity can not be de-embedded
    correctly.
  • Higher Order Transmission Line Modes The
    de-embedding assumes that there is only one mode
    propagating on the connecting transmission line,
    usually the fundamental quasi-TEM mode. If higher
    order modes are propagating, the de-embedded
    results are not valid. The same is true for
    actual, physical, measurements.

75
Vias (1)
  • Vias can be used to connect metalization between
    any substrate or dielectric layer. Thus, ems
    vias can be used in modeling airbridges, spiral
    inductors, wire bonds and probes as well as the
    standard ground via.
  • Ems vias use a uniform distribution of current
    along their height and thus are not intended to
    be used to model resonant length vertical
    structures.
  • There are basically two types of vias edge and
    polygon. The via polygons can be rectangles,
    circles or any arbitrary shape.

76
Vias (2)
Examples of via polygons The shape drawn by the
user appears in black. The actual via metal is
shown by the fill pattern which is the video
reverse of the metal pattern. Since current
travels on the surface of a via, the middle of
the via is hollow, filled with the dielectric
material of the dielectric layer that the via
traverses.
77
Multi-Layer Vias
A via may traverses more than one dielectric
layer. It can originate on any level and end on
any level. The via is automatically drawn on each
level it traverses.
78
Metalization Loss (1)
Metalization losses may be assigned to circuit
metal, top cover and ground plane. Sidewalls are
always assumed to be perfect conductors. The
Sonnet model of metal loss uses the concept of
surface impedance, measured in Ohms/sq. This
concept allows planar EM simulators to model real
3-dimensional metal in two dimensions.
79
Metalization Loss (2)
In most cases the normal metal type may be
chosen. The user determines the loss using the
bulk conductivity, the metal thickness and the
current ratio. The current ratio is the ratio of
the current flowing on the top of the metal to
the current flowing on the bottom of the metal.
80
Dielectric Loss
  • The loss equation can be expressed in terms of an
    overall loss tangent

Values entered by user
  • The loss equation can also be expressed in terms
    of an overall conductivity

81
Thick Metal Analysis
The thickness of a metalization can be accounted
for by modeling both surfaces with a zero
thickness metalization sheet. Additional interior
sheets can refine the model further.
82
Automatic Thick Metal Analysis in Sonnet V9
The influence of thick metalization can easily be
analyzed without rebuilding the simulation model.
83
Dielectric Bricks
A dielectric brick is a solid volume of
dielectric material embedded within a circuit
layer. Such a brick can be added anywhere in the
circuit.
84
Spice Lumped Model Synthesis
The Spice lumped model synthesis takes the
results of the electromagnetic analysis of a
circuit and synthesizes a lumped model of
inductors, capacitors, resistors and mutual
inductors. This Spice generation capability is
intended for any circuit which is small with
respect to the wavelength of the highest
frequency of excitation.
85
Antennas and Radiation
Radiation can be simulated by including a lossy
top cover and by placing the sidewalls far from
the radiator. The top cover should be placed one
half wavelengths from the radiator.
86
HTML Auto Documentation in V9
87
Sonnet Professional 9 Applications
88
Application Example 1 Superconducting Microstrip
Filter (1)
Circuit simulator result with modeled elements
Specs
89
Application Example 1 Superconducting Microstrip
Filter (2)
Field simulator result (Sonnet em with ABS)
90
Application Example 1 Superconducting Microstrip
Filter (3)
Measurement vs. Sonnet field simulation
91
Application Example 2 Stripline Filter
The em analysis of the filter requires only 4
frequency points with ABS sweep!
92
Application Example 3 Interdigital Microstrip
Filter
93
Application Example 4 Stripline to Microstrip
Transition
94
Application Example 5Coax Fed Patch Antenna
(1)
Analyzed current density at center frequency
95
Application Example 5Coax Fed Patch Antenna
(2)
Polar plot of the antenna pattern
(theta-cuts). Blue Phi 0 deg Red Phi 90 deg
96
Application Example 6 868 MHz Loop Antenna
(1)
Y
X
Sonnet Model
Hardware Layout on FR4
Analyzed current density at center frequency
97
Application Example 6 868 MHz Loop Antenna
(2)
Blue Theta-Cut, Phi0deg
Red Theta-Cut, Phi90deg
98
Application Example 7 Spiral Inductor
(Motorola) (1)
9.25-turn Circular Spiral Inductor on 100 um
Silicon (step-graded conductivity in
substrate) 5 insulating layers between 1 um and
3 um 1-10 GHz measured 45 mins. total for 300
data point sweep (thick metal modeled) 2.5GHz
Pentium 4 Notebook PC Data and design courtesy
of Motorola SPS/WISD
99
Application Example 7 Spiral Inductor
(Motorola) (2)
100
Application Example 8 LTCC Bluetooth Filter
LTCC Module (7-layer) design suitable for
Bluetooth and similar applications
Design and measurements courtesy of National
Semiconductor Corp.
101
Application Example 9LTCC Multi-Layer Diplexer
102
Application Example 10 Motorola LTCC Filter
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