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MURI - Integrated Nanosensors Ivan K. Schuller UCSD Characterization of InAs/GaSb Superlattices for IR Imaging Objective: Develop efficient InAs/GaSb IR detectors – PowerPoint PPT presentation

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Title: Objective:


1
MURI - Integrated Nanosensors Ivan K. Schuller
UCSD Characterization of InAs/GaSb Superlattices
for IR Imaging
  • Objective
  • Develop efficient InAs/GaSb IR detectors
  • InAs/GaSb superlattice employed in IR focal plane
    array detectors. Efficiency of the detector may
    be limited by coherence length.
  • Tune lattice spacing and coherence length using
    transition layers.
  • Develop quantitative method to characterize
    InAs/GaSb superlattices with transition layers to
    optimize MBE growth.

UCSD SUPREX Refinement of AFRL InAs/GaSb
Superlattices
Strain Tuning Using Transition Layer
  • Potential Benefits to Air Force
  • More efficient InAs/GaSb focal plane arrays
  • Faster development of materials for IR detectors
  • Quantitative characterization of AFRL grown
    materials
  • Results
  • Suprex refinement method developed at UCSD used
    to analyze superlattices grown at AFRL.
  • Suprex refinement determines strain profiles of
    InAs/GaSb superlattices containing InSb
    transition layers.
  • 3. Minimum strain is obtained for 0.5 monolayer
    InSb transition layer.
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