SOI Anisotropic etch: NP105/RIE TEST 4

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SOI Anisotropic etch NP105/RIE TEST 4
Sample/Mask Silicon on Insulator (52 nm, 160 nm
...) OAAO diam 50 nm, thick. 650 nm ICP-RIE
Recipe Preclean (yes or no) and time Gases
CF4/O2 (25/5 sccm) RIE Power 150 W Time
300 sec Pressure 10-15 mTorr Run
Date xx/xx/2005 Results Bulk Etch rate ???
nm/sec OAAO etch rate ??? nm/sec
plan view
90