Optoelectronic Simulation of Photodetectors Tarun Parmar (RIT, MicroE Co-op)

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Optoelectronic Simulation of PhotodetectorsTarun
Parmar (RIT, MicroE Co-op)

• Background
• Example Dark current is a important limiting
  factor in the operation of imaging sensors

• Results
• The poster presents simulation of recombination
  rate of a photodetector (photodiode) being
  fabricated at RIDL.

• Goals
• To simulate the dark characteristics of the
  photodiode to figure out the recombination rate
  which contributes to the dark current

• Plan
• Use to model the operation of the detector and
  get recombination calculations

Device Operation

• P-I-N photodiode operated in reverse bias
• P high acceptor concentration
• I-ntrinsic (lightly) doped material
• N high donor concentration

Electric Field concentrated near the electrode
Photon Detection

• Impotents of recombination rate
• Recombination is
• This contributes to the dark current