Research in NoMaD: Nanoelectronic Materials

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Research in NoMaD Nanoelectronic Materials
Devices Research Group
Jonathan P. Bird Department of Electrical
Engineering University at BuffaloBuffalo, NY
14260, USA
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Presentation Overview
Today I will give an overview of some of the
research in my group in the area of
nanoelectronics
Nanoelectronics Although the term
nanotechnology is generally defined as utilizing
technology less than 100 nm in size,
nanoelectronics often refers to transistor
devices that are so small that inter-atomic
interactions quantum mechanical properties need
to be studied extensively
source Wikipedia ?
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NoMaD Research in Nanoelectronics Main Themes
? Nanoscale Quantum Transport Phenomena
Spontaneous Spin Polarization in 1D
Wires Transient Transport Phenomena in
Nanodevices ? Prototype Device
Development Nanoscale Terahertz Sensors
Reprogrammable Hybrid Nanomagnetic
Devices ? Characterization of New
Nanomaterials Metallic Nanowires, Carbon
Nanotubes Focused-Beam Nanofabrication
Techniques
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? Nanoscale Quantum Phenomena Spin Readout With
Nanowires
INPUT Pulse
500 nm
All-Electrical Preparation Readout of Trapped
Single Spin!
OUTPUTPulse
Science 303, 1621 (2004) Phys. Rev. Lett. 92,
096802(2004) Phys. Rev. Lett. 99, 136805 (2007)
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? Prototype Device Development Nanoscale
Terahertz Sensors
Appl. Phys. Lett. 92, 223115 (2008)
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? Characterization of New Nanomaterials Metallic
Nanowires
Magneto-Resistance Hysteresis Surface Magnetism?
Appl. Phys. Lett. 85, 281 (2004) Phys. Rev. B 76,
184404 (2007)
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Nanomagnetoelectronics

• The marriage of ferromagnetic materials with
  semiconductor devices offers many potential
  advantages
• ? Integration of logic and memory schemes within
  the framework of a single hardware
• ? Fast non-volatile memories based on the
  switching of single magnetic domains
• ? Reduced power dissipation associated with the
  storage of non- volatile memory in magnetic form

Semiconductor approaches lagging far behind
metal-based technology
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Nanomagnetoelectronics Mag-FET for Integrated
Logic Memory

• We are exploring the implementation of a
  Ferro-FET that adds non-volatile memory
  capability to the logic functionality of FETs
• ? This is achieved by using a nanoscale
  ferromagnet as the gate and manipulating its
  magnetic fringe fields to control the current

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Nanomagnetoelectronics Mag-FET for Integrated
Logic Memory
Hysteretic MR that is strongly enhanced in the
threshold regime!
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Nanomagnetoelectronics Mag-FET for Integrated
Logic Memory

• In spite of the promise of these results, there
  are many issues that must be overcome in order to
  implement the Ferro-FET as a viable
  technology ? Operation temperature must be
  increased above 300 K ? Amplitude of tunneling
  magneto-resistance must be increased ?
  Convenient means to switch the gate magnetization
  is needed ?
• Solution of these problems could provide new
  advances however in the field of reprogrammable
  electronics

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For More Details, Please See www.eng.buffalo.edu/
jbird