Title: Atomic Scale Understanding of Intermixing Behavior of Thin Metal Multlayer
1Atomic Scale Understanding of Intermixing
Behavior of Thin Metal Multlayer
- Sang-Pil Kim, Jae-Young Park, Seung-Cheol Lee,
- Yong-Jae Chung, Chung-Nam Whang and Kwang-Ryeol
Lee - Korea Institute of Science and Technology, Seoul,
Korea - Hanyang University, Seoul, Korea
- Yonsei University, Seoul, Korea
2Devices with Thin Multilayers
12nm
GMR Spin Valve
Major materials issue is the interfacial
structure in atomic scale
3Thin Film Growth Model (conventional)
4Calculation Methods
Adatom (normal incident ? 0.1 eV)
300K Initial Temperature
300K Constant Temperature
Fixed Atom Position
- Co-Al EAM potential
- x,y-axis Periodic Boundary Condition
- z-axis Open Surface
- Deposition rate 1.306 10-1 nm/nsec
- MD calc. step 0.1fs
R. Pasianot et al, Phys. Rev. B45, 12704
(1992). A. F. Voter et al , MRS Proc. 82, 175
(1987). C. Vailhe et al, J. Mater. Res. 12, 2559
(1997).
5Deposition in Co-Al System
Co on Al (001)
Al on Co (001)
6Asymmetry in Interfacial Intermixing
7Radial Distribution Function of Interface
- CoAl compound layer of B2 structure was formed
spontaneously.
8Atomic deposition behavior
Co on Al(111)
Al on Co(111)/(0001)
9Asymmetry in Interfacial Intermixing
- Deposition at 300K
- Initial kinetic energy 0.1eV
10Asymmetry in Au-Pt
Au on Pt (001)
Pt on Au (001)
11Deposited Atom of 5.0 eV
Co on Cu (100)
Cu on Co (100)
12Ion Scattering Spectroscopy
- CoAxial Impact Collision Ion Scattering
Spectroscopy (CAICISS) - Energy range of keV ? penetration depth lt
10 Å
13Polar Scan in 1100 on Co (0001) Surface
14Polar scan of Al added Co (0001)
DFT calculation results
15Al on Co (0001) Surface
16Polar Scan in 100 on Al (001) Surface
A121 (31.7)
A121 (58.3)
A132 (32.7)
A11 (12.9)
A122 (26.4)
A122 (11.52)
A132 (20.4)
A130 (79.1)
17Polar Scan of Co added Al (001)
18Magnetic Properties of Co-Al system
FCC - Al
Spin resolved DOS
19Magnetic properties of Co-Al Thin Layer
MOKE (Magneto-Optic Kerr effects)
Capping layer (50Å)
Capping layer (50Å)
Capping layer (50Å)
Co (30Å)
Co (30Å)
Al (30Å)
Co (30Å)
Cu buffer layer (1500Å)
Al (840Å)
Cu buffer layer (1500Å)
Si substrate
Si substrate
Si substrate
20Co Thickness Effect
21Effect of Coating Sequence
Capping layer (50Å)
Co (30Å)
Cu buffer layer (1500Å)
Si substrate
Al
22How thick is the nonmagnetic (B2) interlayer?
5Å
7Å
30Å
10Å
23Thickness of B2 Layer 3ML
3ML 10Å
24Summary
Co on Al
Al on Co
Asymmetry in interfacial intermixing was observed
in both MD simulation and experiment.
25A Novel Process
26Acknowledgement
- Financial support from
- Core Capability Enhancement Program of KIST
27Asymmetry in Interfacial Intermixing
- Deposition at 300K
- Initial kinetic energy 0.1eV
28Kinetic Criteria for Intermixing
Activation Barrier for Mixing
Reaction Coordinate
29Kinetic Criteria for Intermixing
Local Acceleration
Activation Barrier for Mixing
(1)
3.5eV
(2)
(3)
(4)
Reaction Coordinate
30(No Transcript)
31Deposition in Co-Al System
Co on Al
Al on Co
32Kinetic Criteria for Intermixing
Local Acceleration
Activation Barrier for Mixing
(1)
3.5eV
(2)
(3)
(4)
Reaction Coordinate
33Asymmetry
34Molecular Dynamic Simulation
Interatomic Potentials
- Empirical Approach
- First Principle Approach