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Mesoscale Bulk Electronics

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Materials have some properties of bulk material, But surface effects are important, ... Electron states are used for primary information-processing operations ... – PowerPoint PPT presentation

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Title: Mesoscale Bulk Electronics


1
Mesoscale Bulk Electronics
2
Beyond the MOSFET
  • Mesoscale
  • An intermediate scale, on the order of 10 nm,
  • Materials have some properties of bulk material,
  • But surface effects are important,
  • And more quantum phenomena become important
  • Bulk
  • Materials structures fabricated using bulk
    processes, w/o atomic precision
  • Electronics
  • Electron states are used for primary
    information-processing operations
  • not photons (optical), or whole atoms (mechanical)

3
What happens _at_ mesoscale?
  • MOSFET scaling hampered by quantization of
  • charge
  • becomes important _at_ L ? 10 nm in all materials
  • energy levels
  • important in semiconductors _at_ L ? 10 nm
  • Can alternative device operating principles
    exploit these quantization effects rather than be
    hampered by them?
  • Some approaches
  • Single-electron transistors
  • Quantum wells / wires / dots, quantum-dot CAs
  • Resonant tunneling diodes / transistors

4
Coulomb blockade effect SET
  • Based on charge quantization
  • of energy levels may not be noticeably
    quantized
  • Comprised of an island of (typically) metal
    surrounded by insulator.
  • Narrow tunnel junctions to transistor
    source/drain - ? 5-10 nm typical
  • Gate controls of electrons that may occupy
    island
  • within precision of 1, out of millions

5
Quantum Wells/Wires/Dots
  • Usually use semiconductor material.
  • Electron position is narrowly confined in 1, 2,
    or 3 dimensions, respectively.
  • ?E between distinct momentum states becomes large
  • In quantum dots, total of mobile electrons may
    be as small as 1!
  • Non-transistorlike quantum-dot logics
  • Most notably, quantum dot cellular automata by
    Notre Dame group

6
Quantized Energy Levels
  • The narrower the space,
  • the smaller the ?? gap between normalmodes n
    and n1
  • the larger the frequency energy gapbetween
    those modes
  • More confinedspaces have widerenergy gaps
    betweentheir distinctmomentum states.

?/3, 3E
?/2, 2E
?, E
7
Resonant Tunneling Diodes
  • Usually based on quantum wells or wires
  • 1-2 effectively classical degrees of freedom

Source
Drain
Island (narrow bandgap)
Tunnel barriers (wide bandgap)
Electron tunnelsthrough barrier
Quantized momentum state
Electron flow
Unoccupied states
Occupied states inconduction band
Energy
8
Resonant Tunneling Transistors
  • Like RTDs, but an adjacent gate electrode helps
    adjust the energy levels in the island

Gate
Source
Drain
9
Future Semiconductor Structures
  • SOI (Silicon-on-Insulator)
  • Band-engineered transistors
  • Vertical transistors
  • FinFETs (Chenming Hu group _at_ Berkeley)
  • Double-gate transistors (e.g. Philip Wong IBM)
  • Multi-layer chips (Lee _at_ Stanford)
  • Quantum FET analysis (Merkle 93)
  • atom-width wires (need ref)

Go through ITRS presentation
10
Nanoelectronics Technologies
  • Scaled MOSFET structures - prev. slide
  • Quantum wells/wires/dots - covered last time
  • quantum dot cellular automata - go thru website
  • Various single-electron devices - today
  • Spintronics - electron (/or nuclear?) spin
    based electronics- today
  • Molecular electronics - today or Friday

11
Quantum Dot Cellular Automata
  • Wires x vs , fan-out, wire-crossing
  • Speed 2 ps/cell
  • compare light can go 0.6 mm in 2 ps
  • ordinary electronic signals 0.3 mm
  • MOSFET gate delay according to ITRS 99
  • 11 ps in 99, 5.7 in 05, 2.4 in 14
  • Gates inverters, majority gates, full adder
  • Paradigms
  • ground state computing
  • clocked QCA pipelining (adiabatic, reversible)
  • Molecular version 20 fs/cell (100x smaller)

12
Spintronics
UF contacts Arthur Hebard,Jeff Krause
  • Cf. Das Sarma group at UF
  • Info written into spin orientation of electrons
  • persists for nanoseconds in conduction es
  • compare 10 fs lifetime for momentum decay
  • Spin control, propagation along wires, selection,
    detection
  • Datta-Das and Johnson spin-based transistors
  • Potential medium for quantum computation

13
Molecular Electronics
  • Tour wires
  • Molecular switches
  • Carbon nanotube devices

14
Helical Logic
See plastictransparencies,readingsfor details
  • Proposal by Merkle Drexler 96
  • Do w. conductors insulators only!
  • no fancy semiconductors, superconductors, or
    tunnel junctions needed...
  • The wires are the devices!
  • Uses simple Coulombic repulsion between
    electrons to do logic
  • Scalable to single electrons atom-wide wires!
  • Externally clocked...
  • by rotation of CPU within a fixed electrostatic
    field
  • Can be used reversibly 10-27 J, 1K, 10 GHz!

15
HL Overall Physical Structure
  • Consider a cylinder of sparse (high-permissivity)
    insulating material (e.g., air), containing
    embedded helical coils of cold conductive or
    semiconductive wire, rotating on its axis in a
    static, flat electric field (or, unmoving in a
    rotating field).
  • An excess of conduction electronswill be
    attracted to regions on wire closest to
    fielddirection.
  • These electron packetsfollow the field along as
    itrotates relative to thecylinder.
  • Next slide Logic!

16
Switch gate operation 1 of 3
Datawire
Conditionwire
17
Switch gate operation 2 of 3
Datawire
Coulombicrepulsion
Conditionwire
18
Switch gate operation 3 of 3
Datawire
Conditionwire
19
Nano-mechanical logics
See plastictransparencies,readingsfor details
  • First proposed by Drexler, 1992 ( earlier)
  • Typically, very low leakage!
  • due to high energy barriers (mechanical rigidity)
    in interactions involving bonded atoms, vs. just
    electrons
  • Pretty fast due to small size, but probably...
  • 1000s slower than molecular electronics might
    be
  • basically, because atoms are 1000s heavier
    than electrons
  • Drexlers logic of rods, cams, springs
  • Molecular scale components
  • Covalently bonded, atomically precise
  • Merkles (1993) buckling logic
  • No sliding-contact interfaces
  • Scalable from macroscale to mesoscale

Also seeSmithsplanarmechanicallogics
20
Molecular Electronics
See plastictransparencies,readingsfor details
  • Tour wires
  • Various molecular switches
  • Various carbon nanotube devices
  • Potential problem areas
  • High resistance of existing molecular devices.
  • Maintaining thermal reliability in face of low
    node capacitances and voltages.
  • High leakage currents, due to tunneling or
    thermal excitation over small, narrow barriers.

21
Biochemical computing
  • Selected points on DNA computing
  • Adlemans experiment
  • Cyclic Mixture Mutagenesis
  • Reversible DNA Turing Machines
  • Seemans self-assembling structures
  • Winfrees tile self-assembly logics
  • DNA computing has many disadvantages
  • High cost of materials
  • Slowness of diffusive molecular interactions
  • Slowness/cost/unreliability of lab steps
  • Prob. wont ever be a cost-effective computing
    paradigm (except maybe for in vivo apps)

Seereadingsfor details
22
Optical computing
  • Not viable at the nanoscale anytime soon!
  • Due to entropy density issues mentioned earlier
  • High enough info. flux requires extremely
    energetic photons, with too-high effective
    temperatures
  • Or, waveguides considerably smaller than photon
    wavelengths - EMF theory suggests Impossible!
  • All-optical computing requires nonlinear
    interactions, between photons materials.
  • Optics (or more generally, EMF waves) will remain
    useful for communications, but only
  • in contexts where extreme bandwidth density is
    not required (or extreme temperatures can be
    tolerated)
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