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Radiation Tolerance of a 0.18 mm CMOS Process

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... white noise. Very low radiation sensitivity of the white noise ... The increase in white noise is never larger than 15% (it is very small in PMOS devices) ... – PowerPoint PPT presentation

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Title: Radiation Tolerance of a 0.18 mm CMOS Process


1
Radiation Tolerance of a 0.18 mm CMOS Process
M. Manghisonic,d, L. Rattia,c, V. Reb,c, V.
Spezialia,c
a Università di Pavia, Dipartimento di
Elettronica, 27100 Pavia, Italy b Università di
Bergamo, Dipartimento di Ingegneria, 24044
Dalmine, Italy c INFN, Sezione di Pavia, Pavia
27100, Italy d Studio di Microelettronica,
STMicroelectronics, 27100 Pavia, Italy
7th International Conference on Advanced
Technology and Particle Physics
Villa Olmo, 15-19 October 2001
2
Outline
V.Re, "Radiation Tolerance of a 0.18 mm CMOS
Process"
Submicron CMOS technologies and their radiation
hardness
Static, signal and noise characterization of
irradiated NMOS and PMOS devices belonging to a
0.18 mm process
Comparison with NMOS and PMOS transistors
belonging to a 0.35 mm technology
7th International Conference on Advanced
Technology and Particle Physics, Villa Olmo,
15-19 October 2001
3
V.Re, "Radiation Tolerance of a 0.18 mm CMOS
Process"
Submicron CMOS technologies
High density mixed-signal front-end systems for
high granularity detectors (microstrip, pixel)
Reduced thickness of the gate oxide 0.35 mm
tOX7.2 nm 0.25 mm tOX5.5 nm 0.18 mm tOX4 nm
Improved radiation hardness
Present focus 0.25 mm CMOS
Characterization of the following CMOS generation
(0.18 mm)
7th International Conference on Advanced
Technology and Particle Physics, Villa Olmo,
15-19 October 2001
4
V.Re, "Radiation Tolerance of a 0.18 mm CMOS
Process"
Test and irradiation conditions
0.18 mm CMOS process by ST Microelectronics
Standard open structure layout (no special
radiation hard technique)
Irradiation up to 100 kGy (10 Mrad) with a 60Co
source
Devices biased during irradiation at normal
operating conditions
7th International Conference on Advanced
Technology and Particle Physics, Villa Olmo,
15-19 October 2001
5
Static characterization ID-VGS
V.Re, "Radiation Tolerance of a 0.18 mm CMOS
Process"
7th International Conference on Advanced
Technology and Particle Physics, Villa Olmo,
15-19 October 2001
6
Threshold voltage
V.Re, "Radiation Tolerance of a 0.18 mm CMOS
Process"
PMOS decrease of less 10 mV in Vth after a 100
kGy dose
NMOS Vth drop of about 10 mV after a 100 kGy
dose
7th International Conference on Advanced
Technology and Particle Physics, Villa Olmo,
15-19 October 2001
7
Signal parameters transconductance
V.Re, "Radiation Tolerance of a 0.18 mm CMOS
Process"
7th International Conference on Advanced
Technology and Particle Physics, Villa Olmo,
15-19 October 2001
8
Noise characterization noise voltage spectra
V.Re, "Radiation Tolerance of a 0.18 mm CMOS
Process"
Small changes over the entire frequency interval
after irradiation
Model of the noise power spectral density
A
a
4
k
T


2
f
(
)
S
f
g
n
f
m
7th International Conference on Advanced
Technology and Particle Physics, Villa Olmo,
15-19 October 2001
9
Noise characterization white noise
V.Re, "Radiation Tolerance of a 0.18 mm CMOS
Process"
Very low radiation sensitivity of the white noise
The increase in white noise is never larger than
15 (it is very small in PMOS devices)
7th International Conference on Advanced
Technology and Particle Physics, Villa Olmo,
15-19 October 2001
10
Noise characterization 1/f noise
V.Re, "Radiation Tolerance of a 0.18 mm CMOS
Process"
Although to a limited extent, 1/f noise is
affected by irradiation
The Af parameter increases less than a factor of
2
7th International Conference on Advanced
Technology and Particle Physics, Villa Olmo,
15-19 October 2001
11
0.18 mm process vs 0.35 mm process Threshold
Voltage
12
0.18 mm process vs 0.35 mm process
13
0.18 mm process vs 0.35 mm process
14
0.18 mm process vs 0.35 mm process Noise voltage
spectrum
15
Conclusions
V.Re, "Radiation Tolerance of a 0.18 mm CMOS
Process"
Static and noise characterization under
irradiation of submicron N and P-channel MOSFETs
has been performed
The investigated devices exhibited a good
radiation tolerance up to 100 kGy absorbed dose
of ionizing radiation
The intrinsic radiation hardness of submicron
CMOS processes has been confirmed
7th International Conference on Advanced
Technology and Particle Physics, Villa Olmo,
15-19 October 2001
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