MEMS FOR HIGH POWER APPLICATIONS

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MEMS FOR HIGH POWER APPLICATIONS
Bruce C Kim and Rahim Kasim
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Plan-view of the MEMS switch (The dimensions are
approximately 300 x 1000 µm2)
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Isometric-view of the MEMS switch.
Fig. Top diagram depicts the switch in the open
position the gap between the gold contact and
conduction path is approximately 1 µm. Bottom
diagram depicts the switch in the closed position
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Fabrication (Metallization of 2X2 array)
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Fabrication
Anchors
contact
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Fabrication
Gap 1.5 µm Anchor 4.2 µm
1000 µm
100 µm
110 µm
100 µm
20 µm
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Fabrication
Gap 1.5 µm Anchor 4.2 µm
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Fabrication
Anchors
Nickel Bridge
Contact
conduction
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Testing
Fig. Testing of the MEMS switch
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Testing
Fig. Testing of the MEMS switch
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Testing (I-V Closed)
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Testing- (I-V open)
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Conclusion

• Extensive testing of 4X4 array underway (ratings
  and number of cycles).
• Packaged array on PCB and testing.
• Integration with diodes.