GaN Semiconductor Device Market Size, Share, Current Scenario and Growth Prospects to 2023-2028

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GaN Semiconductor Device Market Size, Share,
Current Scenario and Growth Prospects to
2023-2028 GaN Semiconductor Device Market by
Type (Opto-semiconductor, RF Semiconductor, Power
Semiconductor), Device (Discrete, Integrated,
HEMT, MMIC), Application (Lighting and Lasers,
Power Drives), Voltage Range, Vertical and
Region- Global Forecast to 2028 https//www.marke
tsandmarkets.com/Market-Reports/gallium-nitride-ga
n-semiconductor-materials-devices-market-698.html
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The GaN semiconductor device market is estimated
to be worth USD 21.1 billion in 2023 and is
projected to reach USD 28.3 billion by 2028, at a
CAGR of 6.1 during the forecast period.
Increasing adoption of GaN semiconductor devices
in consumer and business enterprises, surging
deploymnet of GaN semiconductor devices in energy
power industry, and growing integration of GaN
semiconductor devices in automotive industry are
some of the major factors driving the market
growth globally. Browse 194 market data Tables
and 65 Figures spread through 254 Pages and
in-depth TOC on "GaN Semiconductor Device Market
- Global Forecast to 2028"
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Discrete semiconductor segment to register
largest market share in the GaN semiconductor
device market during forecast period Discrete GaN
semiconductor components include GaN transistors
and GaN diodes that are individually packaged and
marketed. These components are used in diverse
applications such as power supply units,
inverters, and radio frequency (RF) amplifiers.
GaN transistors and diodes effectively manage
substantial voltage and current levels, leading
to powerful designs. Additionally, they enable
more compact and lightweight circuits suitable
for applications where constraints on size and
weight are paramount. Ask PDF Brochure https//w
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Power Energy to register highest CAGR in the
GaN semiconductor device market during forecast
period The energy power segment is expected to
grow at the highest CAGR during the forecast
period. This growth can be attributed to the
rising integration of GaN semiconductor devices
into electronic systems to work in elevated
temperatures, pressures, and voltages. Moreover,
The GaN semiconductor technology foresees
extensive adoption in energy and power solutions,
encompassing realms such as energy storage
systems, solar DC to AC inverters, AC solar
panels, and volt-ampere reactive (VAR)
compensators in the future.
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Asia Pacific held for the largest share of the
GaN semiconductor device market in 2022 Asia
Pacific is accounted for the largest share of the
GaN semiconductor device market in 2022. The
presence of established several semiconductor
manufacturing companies such as Toshiba (Japan),
Nichia Corporation (Japan), and Mitsubishi
Electric (Japan), increasing integration in
consumer business enterprise verticals,
government-led initiatives for innovation and
industrial development are the major factors
driving the market growth in Asia
Pacific. Request Free Sample Pages https//www.m
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Key Market Players The major players in the GaN
semiconductor device companies include Qorvo,
Inc. (US), Wolfspeed, Inc. (US), Sumitomo
Electric Industries, Ltd. (Japan), MACOM
Technology Solutions Holdings, Inc. (US) and
Infineon Technologies AG (Germany). These
companies have used both organic and inorganic
growth strategies such as product launches,
agreements, collaborations, acquisitions,
partnerships and expansions to strengthen their
position in the market.
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GaN Semiconductor Device Market Ecosystem The
prominent players in the GaN semiconductor device
market are Qorvo, Inc. (US), Wolfspeed, Inc.
(US), Sumitomo Electric Industries, Ltd. (Japan),
MACOM Technology Solutions Holdings, Inc. (US)
and Infineon Technologies AG (Germany). These
companies perform organic and inorganic growth
strategies to expand themselves globally by
providing advanced products of GaN semiconductor
devices.
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Opportunity Growing integration of GaN
semiconductor devices in automotive industry The
automotive industry is experiencing a rise in
demand for GaN semiconductor devices, which are
used to improve the performance efficiency of
electrification, connectivity, and autonomous
driving. The limitations of power conversion in
silicon semiconductor devices have led to an
increased demand for GaN, which provides improved
efficiency, speed, and smaller size to automotive
electronics. GaN semiconductor devices can be
used in several automotive applications such as
hybrid and electric power DC-DC converters, Lidar
and driver assist (ADAS) and autonomous
navigation systems, motor drives, infotainment
systems, and in Class D Audio systems. Therefore,
the automotive industry is likely to see an
increase in the deployment of GaN
semiconductor Challenge Manufacturing
complexities associated with GaN semiconductor
devices GaN semiconductor devices involve
several manufacturing complexities due to their
unique properties and material characteristics.
The epitaxial growth of GaN layers on substrates
is an important step in GaN device manufacturing.
These layers must be grown with crystalline
quality and low defect density to achieve the
desired optimal device performance. Likewise,
while going through all the manufacturing
processes, equipment, and materials, factors like
thermal coefficients, polarization effects,
bandgap and chemical stability, dopants in the
crystal lattice, a stable gate insulator layer,
crystal defect management, and thermal stability
play an important role. These challenges can be
resolved by launching reliable testing methods.
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