Indium gallium nitride

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Indium gallium nitride

• By Charles Ball
• MEEN 3344
• October 15, 2008

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Characteristics of Indium Gallium Nitride

• Semi Conductor Material
• high heat capacity
• mix of gallium nitride (GaN) and indium nitride
  (InN)
• Defect Rich

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Band Gap
Conductor Band

• Between Valence and Conduction bands.
• Electrons may jump from valence to conduction
  band if supplied with specific energy.
• This specific energy is unique for all materials.

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Lab Discovery

• Semiconductor Indium Nitride band gap re-measured
  and found to be 0.7eV instead of 2.0eV.
• By Adjusting the composition s it can be tuned
  to any part of the electromagnetic spectrum.

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Advantages / Disadvantages

• Disadvantages
• Difficult to dope to create p-type material
• Billions of defects per square centimeter.

• Advantages
• Low Band gap (o.7eV)
• Smooth gap-curve when adjusting alloy
  composition.
• Easily made into layers (very tolerant to
  mismatched lattice systems)

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References

• http//en.wikipedia.org/wiki/Band_gap
• http//www.lbl.gov/Science-Articles/Archive/MSD-fu
  ll-spectrum-solar-cell.html
• http//www.lbl.gov/Science-Articles/Archive/MSD-pe
  rfect-solar-cell-2.html
• http//en.wikipedia.org/wiki/Indium_gallium_nitrid
  e