Title: 332:479 Concepts in VLSI Design Lecture 14 Logic Gate Families and Layout
1332479 Concepts in VLSIDesignLecture 14Logic
Gate Families and Layout
- XOR gates
- Critical Paths
- Logic Layouts
- Transmission Gate Layouts
- Clocked CMOS Logic
- Pass Transistor Logic
- Standard Cells and Gate Arrays
- Summary
- Michael L. Bushnell -- CAIP Center and WINLAB
- ECE Dept., Rutgers U., Piscataway, NJ
2Material from Principles of CMOS VLSI Design By
Neil E. Weste and Kamran Eshraghian
3XOR Gates
- nMOS XNOR gate CMOS XOR gate
- Complement A, B, or OUT to get an equivalence gate
B
A
OUT
B
A
B
4Causes of Incorrect Gate Operation
- Insufficient or noisy power lines
- Gate input noise
- Faulty transistors
- Faulty transistor connections
- Incorrect transistor ratios
- Charge sharing or bad clocking of dynamic gates
- Ratioed and dynamic gates not used in application
specific integrated circuits (ASICs) - Used in microprocessors
5Critical Paths
- Slowest timing paths that limit a chips speed
- Affect critical paths at these levels
- Architecture
- RTL/Logic gate levels
- Circuit level
- Layout level
- RTL/logic level pipelining, gate types, fanin
fanouts - Circuit level resize transistors to speed up
- Layout level speed up by changing physical
layout - False paths appear to be critical paths, but
cannot propagate transitions due to Boolean value
conflicts
6New Gate Notation
- Bubble on transistor closest to gate output
- Stage ratio increase in transistor size in
successive logic stages - Use gates with series inputs of 2-5 for best
speed
7Example
8Worst-Case Rise Delay for m-Input NAND
9Reformulation
10New Delay Model
- tdr tinternal-r k toutput-r
- tinternal-r Rp Cg m r
- toutput-r Rp Cg 1 q (k)
- n k
- tf equation is similar
- Assume equal-sized n p transistors
(
)
11Different Delay Model
- tr tf
- NAND gate Rp m Rn
- Wp Wn
- m
- NOR gate Rn m Rp
- Wn Wp
- m
12Delay of 1-3 Input Gates
13Delay of 4-8 Input Gates
14NAND/NOR Delays Measured with SPICE
15Effective Channel Resistances
16Choice of Fastest Gate Implementation
17Comparison Results for Different 8-Input AND Gates
18Logic Design Guidelines
- Avoid long resistive charging / discharging paths
in CMOS - Use NANDs wherever possible
- Place inverters at high fanout nodes
- Avoid NORs in high-speed circuits
- With fanin gt 4 and large fanout
- Keep fanout below 5-10
- Use minimum-sized gates on high fanout nodes to
keep CL down - Keep rising (falling) edges sharp
- When power or area is a constraint, use large
fanin static gates
19CMOS Inverter Layouts
20High Drive Inverters
21NAND Gate Layout Guidelines
- Use metal3 or highest metal layer for power and
ground - Place transistors in complex gates
- Horizontal channels in diffusion
- Vertical poly gates
- Use line of diffusion rule for gate layout
22NAND Gate Layouts
23NOR Gate Layouts
24Complex Logic Gate Layout
25XNOR Layouts
26Full-Custom Density Improvement
- Route wires over cells
- Use merged source/drain connections
- Use white space in sparse gates
- Use smaller, optimal device sizes
27Reducing CL
- Use better physical design
28Inferior Gate Layout
29Superior Gate Layout
30Transmission Gate Layouts
31Two-Input MUX
32Two-Input MUX
33Standard (Sandia) Cells
- Fixed height (pitch)
- Width varies with gate function
- Automatically placed in rows and wires routed by
Cadence Envisia tool
34Example Standard Cell
35More Standard Cell Layouts
36More Standard Cell Layouts
37Gate Array (Sea of Gates) Layout
38Sea of Gates Layout
39Gate Array Layouts
- Isolate gates from each other with vertical poly
strips tied to VSS (VDD)
40Clocked CMOS Dynamic Logic
- C2MOS Used to
- Interface with dynamic CMOS logic
- Same input C as static CMOS longer tr tf
- Faster if clocking transistors at center
- Better for hot e-- problems if clock transistor
is next to ground - CLOCK is last input to change
- However, this defeats the isolation purpose of
C2MOS
41Clocked CMOS Logic
CLK
CLK
42Summary
- XOR gates
- Critical Paths
- Logic Layouts
- Transmission Gate Layouts
- Clocked CMOS Logic
- Pass Transistor Logic
- Standard Cells and Gate Arrays