Radiative and Non-Radiative Processes in Gallium Nitride/Aluminium Nitride Superlattice Structures - PowerPoint PPT Presentation

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Radiative and Non-Radiative Processes in Gallium Nitride/Aluminium Nitride Superlattice Structures

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Title: Radiative and Non-Radiative Processes in Gallium Nitride/Aluminium Nitride Superlattice Structures


1
Radiative and Non-Radiative Processes in Gallium
Nitride/Aluminium Nitride Superlattice Structures
Phonon
Spectroscopy
6th April CMMP 2004
  • C E Martinez, N M Stanton, A J Kent,
  • C R Staddon, S V Novikov and C T Foxon

School of Physics and Astronomy, University Park,
Nottingham NG7 2RD, UK
2
Phonon
Spectroscopy
Introduction
  • AlxGa1-xN/GaN superlattice (SL) systems have
    recently received
  • increased attention
  • Extending the range of GaN based optical devices
    deep into the
  • UV region of the spectrum
  • Due to c-axis growth on GaN, combination of
    strains due
  • to lattice mismatch results in strong internal
    electric fields

6th April CMMP 2004
School of Physics and Astronomy, University Park,
Nottingham NG7 2RD, UK
3
Phonon
Spectroscopy
  • Investigation into the influence of these fields
    on the radiative and nonradiative recombination
    mechanisms in GaN structures

Two complimentary techniques
  • Information about non-radiative processes often
    inferred from
  • results of optical measurements
  • Measure directly the phonons emitted during
    non-radiative
  • processes, and compare with results of time
    resolved
  • PL measurements (TRPL)

6th April CMMP 2004
School of Physics and Astronomy, University Park,
Nottingham NG7 2RD, UK
4
Phonon
Spectroscopy
Sample Parameters
Sample Number Well Width (nm) Barrier Width (nm) No. of Periods Calculated Internal Field (MV/cm) Calculated e1h1 Energy (eV) Observed e1h1 Energy (eV)
MS541 4.2 3.2 40 3.1 2.82 2.95
MS540 3.7 3.7 40 3.6 2.86 2.99
MS542 3.2 4.2 40 4.0 2.96 3.10
R. Cingolani et al, Phys. Rev. B 61, 2711
(2000).
6th April CMMP 2004
School of Physics and Astronomy, University Park,
Nottingham NG7 2RD, UK
5
Phonon
Spectroscopy
  • PL emission energy is below the GaN band gap
  • With decreasing well width, the PL peak emission
    energy blueshifts
  • In reasonable agreement with results of
    calculations for these structures

Normalised PL spectra for all samples at power
density of 38 kW/cm2, as measured at the peak of
the PL time decays.
6th April CMMP 2004
School of Physics and Astronomy, University Park,
Nottingham NG7 2RD, UK
6
Phonon
Spectroscopy
The Technique
Laser _at_ 355nm, 10ns pulses, 50mm spot size
Sample _at_ 1.5K

6th April CMMP 2004
AlN/GaN 40 period superlattice
School of Physics and Astronomy, University Park,
Nottingham NG7 2RD, UK
7
Phonon
Spectroscopy
  • Observations
  • Arrival of longitudinal acoustic phonons (LA) at
    35 ns
  • Arrival of transverse acoustic phonons (TA) at
    70 ns
  • As excitation power increases the optical to
    phonon signal ratio increases
  • Delayed phonon signal at 185 ns becomes more
    intense at higher power

Phonon signals obtained from MS 541 for a range
of excitation power densities (3.9W/cm2 -
38 kW/cm2)
6th April CMMP 2004
School of Physics and Astronomy, University Park,
Nottingham NG7 2RD, UK
8
Phonon
Spectroscopy
  • Three possible sources of delayed signals
  • Phonon reflection
  • Signal does not correspond to reflection arrival
    times of LA and TA phonons (110 ns and 210 ns
    respectively)
  • Decay of optic (LO) phonons
  • Decay product signals are characteristically
    broad and slow - the delayed signal we observe
    exhibits a fast decay
  • Observation of delayed non-radiative
    recombination at higher excitation powers
    direct observation of the de-screening internal
    fields due to the quantum confined Stark effect?

6th April CMMP 2004
School of Physics and Astronomy, University Park,
Nottingham NG7 2RD, UK
9
Phonon
Spectroscopy
Quantum Confined Stark Effect (QCSE)
Large internal fields tilt the bands, and
suppress radiative recombination
As excitation power density increased - number of
carriers increases
Internal fields are partially screened
Non-radiative recombination processes take over,
via phonon assisted tunnelling
Reduction of e/h spatial separation, efficiency
of radiative recombination increases
As carriers recombine, internal fields are
gradually de-screened
6th April CMMP 2004
School of Physics and Astronomy, University Park,
Nottingham NG7 2RD, UK
10
Phonon
Spectroscopy
Pexc 3kW/cm2
Pexc 38kW/cm2
  • At low powers, photogenerated carrier density is
    not sufficient to screen the fields, no delayed
    phonon signal
  • As power is INCREASED, so is the carrier
    density, and QCSE is reduced. Delayed phonon
    signal observed more pronounced in the sample
    with lowest internal field strength
  • Increasing the power further delayed phonon
    signal apparent in all samples

Screening of internal fields by photogenerated
carrier density, followed by gradual de-screening
can account for the delayed phonon signal
similar effects should be visible in PL data
6th April CMMP 2004
School of Physics and Astronomy, University Park,
Nottingham NG7 2RD, UK
11
Phonon
Spectroscopy
  • Lifetime for a given power increases as well
    width increases (60 ns narrowest wells to 160 ns
    widest wells)
  • Lifetime is reduced at higher excitation powers
  • Effect is more pronounced for the widest well
    sample (weakest internal field strength)
  • Sudden decrease in PL decay time corresponds to
    the onset of the delayed phonon signal

The PL lifetimes as a function of power density.
6th April CMMP 2004
School of Physics and Astronomy, University Park,
Nottingham NG7 2RD, UK
12
Phonon
Spectroscopy
Reduction in e/h spatial separation
  • At low power, no shift in PL emission peak
    observed
  • At higher power, PL peak energy redshifts at
    longer times

Enhancement of radiative recombination
  • Further evidence of
  • re-establishment of internal fields following
    partial screening by photogenerated carriers

Progressive loss of carriers
De-screening effect - QCSE gradually restored
System returns to previous unscreened state
6th April CMMP 2004
School of Physics and Astronomy, University Park,
Nottingham NG7 2RD, UK
13
Phonon
Spectroscopy
Conclusions
  • Combined direct detection of phonons and TRPL
    measurements to study the effects of internal
    electric fields on radiative and non-radiative
    recombination in AlN/GaN superlattices
  • At high excitation power, photoinjected carriers
    screen the strong internal fields, and enhanced
    radiative recombination is observed
  • As carriers recombine, de-screening effects
    result in an increase in recombination via
    non-radiative processes
  • We observe directly these non-radiative
    processes as a delayed acoustic phonon signal in
    time of flight measurements

6th April CMMP 2004
School of Physics and Astronomy, University Park,
Nottingham NG7 2RD, UK
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