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GLAST Large Area Telescope:

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Title: PowerPoint Presentation Author: Robert Johnson Last modified by: Robert Johnson Created Date: 2/16/2003 2:00:33 AM Document presentation format – PowerPoint PPT presentation

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Title: GLAST Large Area Telescope:


1
GLAST Large Area Telescope Tracker
Subsystem WBS 4.1.4 2B Radiation
Evaluation-Testing Hartmut F.-W.
Sadrozinski Santa Cruz Institute for Particle
Physics University of California at Santa
Cruz Tracker Subsystem Scientist hartmut_at_scipp.uc
sc.edu
2
LAT TKR Radiation Overview
  • Radiation Levels are given in
  • 433-SPEC-0001 GLAST Mission System Specification,
    CH 07
  • LAT-SS-01165 TID Self-Shielding of the GLAST LAT
    TRK
  • Applicable LAT documents
  • LAT-SS-00152 Level-4 Electronics requirements
  • LAT-DS-00011 LAT SSD Technical Specifications
  • LAT-TD-00673 Constraints on the Temperature of
    TKR SSD
  • LAT-TD-00401 LAT EE Parts List
  • LAT-SS-00169 TKR Front-End (GTFE) Specification
  • LAT-SS-00170 TKR Readout Controller (GTRC)
    Specification

3
LAT TKR Radiation Overview
  • Test plans
  • LAT-CR-00082 LAT SSD Quality and Reliability
    Assurance
  • LAT-TD-00085 Testing Procedures for the GLAST LAT
    SSDs
  • LAT-PS-01325 Radiation Test Plan for the LAT TKR
    ASICs
  • Test Results
  • LAT-TD-00086 LAT Review of SSD RHA Test Results
  • LAT-TD-00128 Results from Heavy Ion Irradiation
    (SSD)
  • LAT-QR-01078 Q/A OF THE GLAST LAT SSD RHA
  • LAT-TD-00333 SEE Test of the LAT TKR Front-End
    ASIC
  • LAT-TD-01172 LAT TKR Readout Controller ASIC SEE
    Test
  • LAT-TD-01632 LAT TKR Frontend ASIC SEE Test

4
Radiation Levels TID
TID is caused by Charged Particles Trapped in SAA
  • Shielding helps!
  • Front Heat blanket, ACD
  • Shielding 2 g/cm2 eliminates all electrons
  • Back Mass of LAT
  • Cuts TID by half
  • Expected 5Y TID lt 0.8 kRad ( low ! )
  • Design 5Y TID 4 kRad
  • (5x Engineering Margin)
  • Only in outer SSD layers
  • for ASICS on outside
  • Majority of TKR much less
  • Testing TID 10 kRad

5
Radiation Levels Heavy Ions
SEE Effects due to Galactic Cosmic Rays and
Solar Particle Events
  • High energy particles due to Geomagnetic cut-off
  • Shielding less effective!
  • GCR
  • For LET gt 2 F(5Y) 5/cm2
  • LET lt 28 MeV/(mg/cm2)
  • SPE
  • For LET gt 5 F(5Y) 5/cm2
  • (worst day/4)
  • LET lt 100 MeV/(mg/cm2)
  • Rates very low, but SEE effects potentially
    destructive
  • GLAST Specs
  • evaluate for LET lt 37 MeV/(mg/cm2)

6
Radiation Effects on TKR Parts
  • Use parts on the accepted parts list of GSFC as
    much as possible
  • New Part Polyswitch re-settable device (3,456 in
    LAT)
  • Do 100 kRad TID test ? NO (Parts are treated
    with 20 MRad during polymerization to enhance
    cross-linking!)
  • Mitigates SEL risk!
  • SSD (9,216 in LAT)
  • SEE effects tested no effects observed, as
    expected
  • TID (ionizing) tested with 60Co part of Q/A at
    Hiroshima U.
  • Proton fluence generates leakage current and
    limits operating temperature
  • ASICs (1,152 GTRC, 13,824 GTFE in LAT)
  • SEE effects important (SEU and SEL) test plan
    results
  • TID (ionizing) test plan results

7
Radiation Effects on TKR SSD
  • Displacement damage due to trapped protons
    increases leakage current
  • DI aVolF
  • Noise in frontend amplifier increases with
    leakage current
  • ENC(DI) (DIt)0.5
  • Exponential temperature dependence of DI limits
    operating temperature

Data apply to top TKR layers only
8
Radiation Hardness Assurance on ASICs
  • Testing done by INFN Padova collaborators
  • SEE testing at INFN Legnaro tandem Van der Graff
    facility (?)
  • TID testing at INFN Legnaro 60Co source
  • We have done 2 SEE runs, 1 TID irradiation with
    fully functional pre-production prototype TKR
    ASICs
  • All LAT ASICs are fabed in epitaxial 0.5um
    Agilent CMOS
  • TID not a problem, SEL Threshold gt 56
    MeV/(mg/cm2)
  • TID Test Plan for each of the 5 lots of GTFE, 1
    lot of GTRC
  • 7 parts each mounted on mini-MCM with 2 GTRC
  • TID 10 kRad in 4 steps
  • Measure power, gain, noise rate and functionality
  • SEU Test Plan for of each of the 5 lots of GTFE,
    1 lot of GTRC
  • 2 parts each mounted on mini-MCM with 2 GTRC
  • Heavy ions with LET from 8 (Si) to 83 (Au)
    MeV/(mg/cm2).
  • Measure Single Event Upset(SEU), Single Event
    Functional Interrupt (SEFI) and Single Event
    Latch-up (SEL) cross sections

9
TID Test Results on TKR ASICs
  • Testing by INFN Padova (R. Rando, D. Bisello, J.
    Wyss et. al.)
  • Irradiate both GTRC and GTFE pre-production
    prototypes
  • Use mini-MCM and DAQ set-up
  • After TID of 10 krad for GTFE, 20 krad for GTRC
  • Power dissipation did not change
  • Gain stable
  • Noise rate under control
  • GTRC and GTFE function at 20MHz

10
SEE Test Results on TKR ASICs
  • Testing by INFN Padova (R. Rando, D. Bisello, J.
    Wyss et. al.)
  • Irradiate both GTRC and GTFE pre-production
    prototypes
  • Fluence from GTRC Test
  • NO SEL observed ? Upper limit on expected rate of
    Latch-up
  • SEU cross sections sensitive to layout details as
    expected
  • Rockett cell proves to be SEU hardened
  • No TID effects
  • Radiation Testing well in hand

11
SEE Test Results on TKR ASICs cont.
  • Very consistent results wrt. to previous data on
    test chips
  • Cross sections different
  • for 0 gt 1 and 1 gt 0 etc
  • Cross section threshold
  • 5-8 MeV/(mg/cm2)
  • SEL Upper Limit
  • lt 10-6 cm2 /GTRC

12
SEE Test Results on TKR ASICs cont.
  • Communication errors and SEFI error cross
    sections and upper limits for SEL for the
    entire GTRC.
  • The Weibul fit s S(1-e-(LET-THR)/W)
  • gives S 410-6, THR 5 - 8, W 40-48.
  • SEL Probability lt 0.5 for entire TKR in 5
    years
  • SEU Probability 1 for entire TKR in 5 years

13
SEL Testing Using the right H.I. Range
  • Single Event Upset (SEU) is essentially a surface
    phenomen
  • Large charges in the gate flips the bit, no
    special H. I. range
  • Single Event Latch-up (SEL)
  • Caused by parasitic transistor inside the bulk
  • Epitaxial structures should reduce charge
    collection
  • Range of Heavy Ions has to exceed the charge
    collection distance
  • Collection Distance
  • A.H. Johnston an ion range that is approximately
    twice the dimension of the epitaxial layer
    thickness is generally adequate.
  • For our 6um epi process this means 17 um
    required range.
  • J. Howard et al. find charge collection distance
    of 26 um for high energy heavy ions in 7 um
    epitaxial structures.
  • ESA/SCC Basic Specification No. 25100 ion range
    gt 30 um .
  • Heavy Ion Range for LET 37 MeV/(mg/cm2)
  • LNL Legnaro (Br) 31um LAT TKR Preference
  • BNL (Br) 39um
  • TAMU (Ag) 130um GSFC Rad Branch Preference

14
TKR Radiation Evaluation Conclusions
  • SSD
  • Radiation issues well understood used to Q/A the
    lots (Hiroshima)
  • Increase in leakage current not expected to
    diminish TKR performance as long as the
    temperature is controlled to lt30?C
  • ASICs
  • Require radiation testing for each of the lots (5
    GTFE, 1 GTRC)
  • Radiation testing well in hand at INFN Padova
  • Expected TID and SEE risk very small
  • SEL mitigation from polyswitch resettable devices
  • Concern
  • Schedule ASIC radiation testing has to start in
    April, yet test plan has not been signed off by
    GSFC.
  • Cost New requirements could introduce schedule,
    cost and man-power problems. We are talking with
    GSFC rad group
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