Barriermetalfree BMF, Cu Dualdamascene Interconnects with Cuepicontacts buried in Antidiffusive, Low

1
Barrier-metal-free (BMF), Cu Dual-damascene
Interconnects with Cu-epi-contacts buried in
Anti-diffusive, Low-k Organic Film

• ??? 13

2
divinyl siloxane bis-benzocyclobutene (p-BCB
k2.6) polymer film, which is featured by the
anti-diffusive characteristics for the Cu.
3
Characterization of Cu-diffusivity in p-BCB
polymer
The low-k, p-BCB film was obtained by
He-plasma-enhanced polymerization of the
vaporized BCB monomers, and had high thermal
stability over 400 ? and high modulus (19GPa)
Here, PVD-Cu(300nm)/p-BCB(300nm) with or without
the insertion of Ta/TaN (20nm/20nm) barrier film
as well as PVD-Cu/SiO2 (300nm) were annealed for
7 hours at 400 ?
4
(No Transcript)
5
(No Transcript)
6
(No Transcript)
7
(No Transcript)
8
(No Transcript)
9
(No Transcript)
10
Conclusion
The BMF, Cu-DDI with the Cu-epi-contacts was
successfully obtained in the low-k, p-BCB
polymer, which has the self-barrier property for
the Cu diffusion. The inter-line leak current was
as low as that for the conventional
barrier-inserted structures, and the inter-line
breakdown endurance was estimated over 10 years.
The BMF, Cu-DDI with the low via-resistance
(0.35/unit for 0.2umf via) and the low line
capacitance (keff 3.1) is one of the ultimate
structures for high performance, 0.1um-CMOS
devices and beyond.