DNA Chip Project Progress Report

1
DNA Chip ProjectProgress Report Discussion

• July 29, 2002

2
Overview

• Comparisons
• Measurement configurations
• Current
• Distance
• Other
• Voltage Plots
• Fabrication Issues
• Conclusions

3
Measurement Configurations
Original Method 22.2 Cover Slip Method
32.3
First Generation
4
2nd Generation Chip
5
2nd Generation Chip
6
Comparison of Measurement Methods
Recall
22
30mA 750 cps/s 15mA 330 cps/s 7mA 100
cps/s
7
Comparison
900 cps/s
1900 cps/s
15mA 1900 cps/s 7mA 900 cps/s
32
8
2nd Generation ChipCurrent Comparison
7mA 647 cps/s, 3mA 83 cps/s, 1mA 35 cps/s
9
2nd Generation Chip Distance Comparison
250mm 83 cps/s, 500mm 5 cps/s
10
2nd Generation ChipResist Application
11
2nd Generation ChipResist Application
Note 3mA 10 cps/s for the fourth test on the
chip
12
2nd GenerationOther Experiments
Using an overdeveloped chip, used N trace And
used F as negative electrode 3mA 1333 cps/s
N trace
Using DE as positive and the 4 Ns as
negative 10mA 4500 cps/s
13
Voltage Plots
14
Voltage Plots
15
Voltage Plots
16
Fabrication Issues
17
Fabrication Issues
18
Experimental Concerns
19
Conclusions

• Concentration
• Current and distance change concentration rates
• Insulating layer increases concentration rate
• Percentage of viewing area affects intensity
  measurements
• Fabrication
• 5mm too small to fabricate reliably
• Center electrode complicates fabrication
• Chip Design
• Need thicker traces to withstand experiments
• Move to a solid pad
• Design to increase percentage of measuring area
• Introduce an insulating layer