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ANNOUNCEMENTS

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Lecture 7 ANNOUNCEMENTS MIDTERM #1 will be held in class on Thursday, October 11 MIDTERM #2 will be held in class on Tuesday, November 13 OUTLINE – PowerPoint PPT presentation

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Title: ANNOUNCEMENTS


1
Lecture 7
  • ANNOUNCEMENTS
  • MIDTERM 1 will be held in class on Thursday,
    October 11
  • MIDTERM 2 will be held in class on Tuesday,
    November 13
  • OUTLINE
  • BJT Amplifiers (contd)
  • Biasing
  • Amplifier topologies
  • Common-emitter topology
  • Reading Chapter 5.1.2-5.3.1

2
Biasing of BJT
  • Transistors must be biased because
  • They must operate in the active region, and
  • Their small-signal model parameters are set by
    the bias conditions.

3
DC Analysis vs. Small-Signal Analysis
  • Firstly, DC analysis is performed to determine
    the operating point and to obtain the
    small-signal model parameters.
  • Secondly, independent sources are set to zero and
    the small-signal model is used.

4
Simplified Notation
  • Hereafter, the voltage source that supplies power
    to the circuit is replaced by a horizontal bar
    labeled VCC, and input signal is simplified as
    one node labeled vin.

5
Example of Bad Biasing
  • The microphone is connected to the amplifier in
    an attempt to amplify the small output signal of
    the microphone.
  • Unfortunately, there is no DC bias current
    running through the transistor to set the
    transconductance.

6
Another Example of Bad Biasing
  • The base of the amplifier is connected to VCC,
    trying to establish a DC bias.
  • Unfortunately, the output signal produced by the
    microphone is shorted to the power supply.

7
Biasing with Base Resistor
  • Assuming a constant value for VBE, one can solve
    for both IB and IC and determine the terminal
    voltages of the transistor.
  • However, the bias point is sensitive to ?
    variations.

8
Improved Biasing Resistive Divider
  • Using a resistive divider to set VBE, it is
    possible to produce an IC that is relatively
    insensitive to variations in ?, if the base
    current is small.

9
Accounting for Base Current
  • With a proper ratio of R1 to R2, IC can be
    relatively insensitive to ?. However, its
    exponential dependence on R1 // R2 makes it less
    useful.

10
Emitter Degeneration Biasing
  • RE helps to absorb the change in VX so that VBE
    stays relatively constant.
  • This bias technique is less sensitive to ? (if I1
    gtgt IB) and VBE variations.

11
Bias Circuit Design Procedure
  1. Choose a value of IC to provide the desired
    small-signal model parameters gm, r?, etc.
  2. Considering the variations in R1, R2, and VBE,
    choose a value for VRE.
  3. With VRE chosen, and VBE calculated, Vx can be
    determined.
  4. Select R1 and R2 to provide Vx.

12
Self-Biasing Technique
  • This bias technique utilizes the collector
    voltage to provide the necessary Vx and IB.
  • One important characteristic of this approach is
    that the collector has a higher potential than
    the base, thus guaranteeing active-mode operation
    of the BJT.

13
Self-Biasing Design Guidelines
(1) provides insensitivity to ? . (2) provides
insensitivity to variation in VBE .
14
Summary of Biasing Techniques
15
PNP BJT Biasing Techniques
  • The same principles that apply to NPN BJT biasing
    also apply to PNP BJT biasing, with only voltage
    and current polarity modifications.

16
Possible BJT Amplifier Topologies
  • There are 3 possible ways to apply an input to an
    amplifier and 3 possible ways to sense its
    output.
  • In practice, only 3 out of the possible 6
    input/output combinations are useful.

17
Common-Emitter (CE) Topology
18
Small Signal of CE Amplifier
19
Limitation on CE Voltage Gain
  • Since gm IC/VT, the CE voltage gain can be
    written as a function of VRC , where VRC VCC -
    VCE.
  • VCE should be larger than VBE for the BJT to be
    operating in active mode.

20
Voltage-Gain / Headroom Tradeoff
21
I/O Impedances of CE Stage
  • When measuring output impedance, the input port
    has to be grounded so that vin 0.

22
CE Stage Design Trade-offs
23
Inclusion of the Early Effect
  • The Early effect results in reduced voltage gain
    of the CE amplifier.

24
Intrinsic Gain
  • As RC goes to infinity, the voltage gain
    approaches its maximum possible value, gm rO,
    which is referred to as the intrinsic gain.
  • The intrinsic gain is independent of the bias
    current

25
Current Gain, AI
  • The current gain is defined as the ratio of
    current delivered to the load to current flowing
    into the input.
  • For a CE stage, it is equal to ?.
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