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Chapter 6b Co-simulation of chip, package and board


Chapter 6b Co-simulation of chip, package and board Prof. Lei He Electrical Engineering Department University of California, Los Angeles URL: – PowerPoint PPT presentation

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Title: Chapter 6b Co-simulation of chip, package and board

Chapter 6b Co-simulation of chip, package and
  • Prof. Lei He
  • Electrical Engineering Department
  • University of California, Los Angeles
  • URL
  • Email

Why do We Need Co-Simulation?
  • Thermal/power/electrical Coupling
  • leakage power in a semiconductor device depends
    on the local temperatures of individual cells
  • temperature distributions also depend on leakage
    power distributions
  • temperature dependence of a metals electrical
  • Joule heating (or self-heating) of metals with
    currents flowing through
  • Integrated RDL, package, and board model
  • Increasingly, package and system designers have
    started to include RDL traces in package models
    because in todays designs RDL and package traces
    are so close to each other that coupling between
    them is significant.

Importance of Co-Simulation
  • A differential pair from chip to package to board

Comparison of s-parameter results between
segregated and integrated models Figures
obtained from An-Yu Kuo, Apache Design Solutions
Chip/Package/Board Modeling
  • It is impossible to put detailed models of chip,
    package and board together for the simulation due
    to the high complexity
  • We need some simplified models that preserve only
    necessary information for the simulation
  • But how?

  • Chip Modeling
  • Current Source Model
  • SPICE Transistor Model
  • IBIS (I/O Buffer )
  • CMP Model
  • Package and Board Modeling
  • S Parameters

Current Source Model
  • Traditional current source model for the chip
  • the non-linearity of the I/O buffer is ignored gt
    negative feedback effect is ignored

SPICE Transistor Models
  • SPICE simulations model a circuit at transistor
  • SPICE models contain detailed information about
    the circuit and process parameters which is
    regarded as proprietary
  • IC vendors are reluctant to provide..
  • Not all SPICE simulators are fully compatible.
  • Slow simulation speed.
  • SPICE has various simulator options that control
    accuracy, convergence and the algorithm type
  • Any options that are not consistent might give
    rise to poor correlation in simulation results
    across different simulators
  • IBIS, is an alternative to SPICE simulation
  • esp. when we are interested in its I/O behavior

What Is IBIS?
  • I I/O
  • B Buffer
  • I Information
  • S Specification
  • IBIS is a universal standard for describing the
    analog behavior of digital device buffers using
    data in ASCII text format
  • Started in the early 90s to promote
    tool-independent I/O models for system-level
    signal integrity work
  • IBIS 3.2 is standardized ANSI/EIA-656-A and IEC
  • IBIS 4.1 incorporates links to VHDL-AMS and

http// http//www.ibis-infor
IBIS files are not really models, they just
contain the data that will be used by the
simulation tools behavioral models and algorithms
Simulation Models IBIS
  • IBIS behavioral data is taken from actual
  • IBIS models tend to simulate much faster than
    SPICE models.
  • IBIS Modeling provides a simple table-based
    buffer model for semiconductor devices.
  • IBIS models can be used to characterize I/V
    output curves, rising/falling transition
    waveforms, and package parasitic information of
    the device.
  • IBIS models are intended to provide
    nonproprietary information about I/O buffers and
    are more easily available from different IC
  • Non-convergence is eliminated in IBIS simulation.
  • Virtually all EDA vendors presently support IBIS
    models, and ease of use of these IBIS simulators
    is generally very good.
  • IBIS models for most devices are freely available
    over the Internet making it easy to simulate
    several different manufacturers devices on the
    same board.

Elements of an IBIS Model
Elements of an IBIS Model
  • Element 1 Pull-down
  • Describes the I/V characteristics during
  • Data for minimum and maximum current for given
  • Data is taken for -Vcc to 2Vcc as that allows a
    behavioral model for signal reflections caused by
    improper termination and overshoot and undershoot
    situations when the protection diodes are
    forward biased.

Element 1
Elements of an IBIS Model
  • Element 2 Pull-up
  • Describes the pull-up state of the buffer when
    the output drives high.
  • Data is entered using the formula Vtable Vcc
  • The minimum and maximum values are determined by
    the minimum and maximum operating temperatures,
    supply voltages and process variations.
  • Combining the highest current values with the
    fastest ramp time and minimum package
    characteristics, a fast model can be derived. A
    slow model can be derived by combining the lowest
    current with the slowest ramp time and maximum
    package characteristics.

Element 2
Elements of an IBIS Model
  • Element 3 GND and Power Clamps
  • Describes the ground and power clamp diodes.
  • The GND clamp curve is derived from the ground
    relative data gathered while the buffer is in the
    high-impedance state and illustrates the region
    where the ground clamp diode is active. The range
    is from -Vcc to Vcc.
  • The power clamp curve is derived from the Vcc
    relative data gathered while the buffer is in a
    high impedance state and shows the region where
    the power clamp diode is active. This measurement
    ranges from Vcc to 2Vcc.

Element 3
Elements of an IBIS Model
  • Element 4 Ramp
  • Describes the ramp time for the pull-up and
    pull-down devices. Ensures proper AC operation of
    the model.
  • The min and max columns represent the minimum and
    maximum slew rates for the buffers.
  • The values represent the intrinsic values of the
    transistors with all package parasitics and
    external loads removed.

Element 4
Elements of an IBIS Model
  • Element 5 Package
  • Adds the component and package parasitics.
  • C_comp is the capacitance of the die itself,
    excluding the package capacitance.
  • Package characteristic resistance, inductance and
    capacitance are added by R_pkg, L_pkg, and C_pkg,

Element 5
Putting it all together the IBIS File
  • A standard IBIS model file consists of three
  • Header Info
  • basic information about the IBIS file and what
    data it provides.
  • Component, Package, and Pin Info
  • the targeted device package, pin lists, pin
    operating conditions, and pin-to-buffer mapping.
  • V-I Behavioral Model
  • all data to recreate I-V curves as well as V-t
    transition waveforms, which describe the
    switching properties of the particular buffer.

Chip Power Network Model
  • Traditional model
  • This simplified model of the dies power delivery
    network can result in inaccurate global power
  • die current can influence the voltage drop
    through the system
  • the resistive and capacitive components of the
    die can determine the resonance frequency and its

Chip Power Network Model
  • CPM Model from Apache
  • CPM contains current sources and R, L, and C
  • It provides a reduced view of effective Rdie and
    Cdie for different frequencies of operation.
  • It also provides switching current that varies
    over time and space

  • Chip Modeling
  • IBIS
  • CPM
  • Package and Board Modeling
  • S Parameters and Co-simulation Flow

Black Box Representation
  • S-parameters are a useful method for
    representing a circuit as a black box
  • The external behaviour of this black box can be
    predicted without any regard for the contents of
    the black box.
  • a resistor
  • a transmission line
  • an integrated circuit.

Definition of Ports
A black box or network may have any number of
This diagram shows a simple network with just 2
Note A port is a terminal pair of lines.
S Parameter Definition
S-parameters are measured by sending a single
frequency signal into the network or black box
and detecting what waves exit from each port.
Power, voltage and current can be considered to
be in the form of waves travelling in both
directions. For a wave incident on Port
1, some part of this signal reflects back out of
that port and some portion of the signal exits
other ports.
Explanation of S Parameters
For a two-port system
First lets look at S11. S11 refers to the
signal reflected at Port 1 for the signal
incident at Port 1. Scattering parameter S11 is
the ratio of the two waves b1/a1.
Explanation of S Parameters
For a two-port system
Now lets look at S21. S21 refers to the
signal exiting at Port 2 for the signal incident
at Port 1. Scattering parameter S21 is the ratio
of the two waves b2/a1.
Explanation of S Parameters
For a two-port system
Now lets look at S21. S21 refers to the
signal exiting at Port 2 for the signal incident
at Port 1. Scattering parameter S21 is the ratio
of the two waves b2/a1.
S21? Surely that should be S12?? S21 is correct!
S-parameter convention always refers to the
responding port first!
Explanation of S Parameters
Explanation of S Parameters
A linear network can be characterised by a set of
simultaneous equations describing the exiting
waves from each port in terms of incident
waves.     S11 b1 / a1   S12 b1 / a2   S21
b2 / a1   S22 b2 / a2     Note again how the
subscript follows the parameters in the ratio
(S11b1/a1, etc...)
Explanation of S Parameters
Explanation of S Parameters
S-parameters are complex (i.e. they have
magnitude and angle) because both the magnitude
and phase of the input signal are changed by the
network. (This is why they are sometimes
referred to as complex scattering parameters).
These four S-parameters actually contain eight
separate numbers the real and imaginary parts
(or the modulus and the phase angle) of each of
the four complex scattering parameters. Quite
often we refer to the magnitude only as it is of
the most interest. How much gain (or loss) you
get is usually more important than how much the
signal has been phase shifted.
What do S-parameters depend on?
S-parameters depend upon the network and the
characteristic impedances of the source and load
used to measure it, and the frequency measured
at. i.e. if the network is changed, the
S-parameters change. if the frequency is
changed, the S-parameters change. if the load
impedance is changed, the S-parameters
change. if the source impedance is changed, the
S-parameters change.
In the Si9000e S-parameters are quoted with
source and load impedances of 50 Ohms
A little math
This is the matrix algebraic representation of 2
port S-parameters
Some matrices are symmetrical. A symmetrical
matrix has symmetry about the leading diagonal.
In the case of a 2-port network, that means
that S21 S12 and interchanging the input and
output ports does not change the transmission
properties. A transmission line is an example of
a symmetrical 2-port network.
  • Parameters along the leading diagonal, S11
    S22, of the S-matrix are referred to as
    reflection coefficients because they refer to the
    reflection occurring at one port only.
  • Off-diagonal S-parameters, S12, S21, are
    referred to as transmission coefficients because
    they refer to what happens from one port to

How about Larger networks
  • A Network may have any number of ports ...
  • The S-matrix for an n-port network contains n2
    coefficients (S-parameters), each one
    representing a possible input-output path.
  • The number of rows and columns in an
    S-parameters matrix is equal to the number of
  • For the S-parameter subscripts ij, j is the
    port that is excited (the input port) and i is
    the output port.

Yes i for output j for input logical -)
(No Transcript)
Sum up
  • S-parameters are a powerful way to describe an
    electrical network
  • S-parameters change with frequency / load
    impedance / source impedance / network
  • S11 is the reflection coefficient
  • S21 describes the forward transmission
    coefficient (responding port 1st!)
  • S-parameters have both magnitude and phase
  • Sometimes the gain (or loss) is more important
    than the phase shift and the phase information
    may be ignored
  • S-parameters may describe large and complex

Co-Simulation Flow
Frequency domain
CPM/IBIS model in s domain for circuits
Time domain
CPM/IBIS model for circuits
S parameters for package/board
Ckt realization of S parameters for
Simulation of S-Parameters
  • S-parameter models can be simulated directly
    using convolution based methods.
  • It is also possible to synthesize an RLC circuit
    from S-parameters
  • for a given S-parameter there are an infinite
    number of circuits that can correspond to it.
  • general approach
  • create a circuit template with a certain topology
  • convert the measured S parameters to Y or Z
  • by matching the Y/Z parameters of the template
    and the measured Y/Z parameters (e.g. matching
    their poles and zeros), we can determine the
    element values in the template

  • S. Emami, C. H. Doan, A. M. Niknejad, R. W.
    Brodersen, Large-signal millimeter-wave CMOS
    modeling with BSIM3," RFIC Digest of Papers, pp.
    163-166, June 2004.
  • C. H. Doan, S. Emami,A. M. Niknejad,
    andR.W.Brodersen, Millimeter-wave CMOS design,
    IEEE Journal of Solid-State Circuits, vol. 40,
    pp. 144-155, Jan. 2005.
  • M. C. A. M. Koolen, J. A. M. Geelen, and M. P. J.
    G. Versleijen, An improved de-embedding
    technique for on-wafer high-frequency
    characterization, in Proc. IEEE Bipolar/BiCMOS
    Circuits and Technology Meeting, Sep. 1991, pp.
  • Dr. Jan Verspecht (December 2005). "Large-Signal
    Network Analysis, IEEE Microwave Magazine (IEEE)
    6 (4) 8292.