An Ultra-low Voltage UWB CMOS Low Noise Amplifier

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An Ultra-low Voltage UWB CMOS Low Noise Amplifier
Yueh-Hua Yu, Yi-Jan Emery Chen, and Deukhyoun
Heo Department of Electrical Engineering,
National Taiwan University, Taipei, Taiwan

• Presenter Chun-Han Hou ( ? ? ?)

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Abstract

• 1.This paper presents an ultra-low voltage UWB
  LNA in a commercial 0.18µm CMOS technology
• 2. The technique of inductive degeneration is
  used in a two-stage conventional distributed
  amplifier to achieve broadband and low noise.
• 3. The common source single-stage amplifier is
  cascaded to the conventional distributed
  amplifier to improve the gain at high frequency.
• 4. The measured
• a.gain of the integrated LNA is 10dB
• b.3dB bandwidth from 2.7 to 9.1 GHz
• c. average noise figure is 4.65dB
• d.the IIP3 is 0dBm
• e.Operated at 0.6V
• f. The UWB CMOS LNA consumes 7mW

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Outline

• 1.Introduction
• 2.LNA Design
• 3.Noise Reduction
• 4.Measurement Result
• 5.Conclusion

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Introduction
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LNA Design
The integrated UWB CMOS LNA is composed of a two
stage conventional distributed amplifier (CDA)
and a common-source single-stage amplifier (CSSA)
in cascade.
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LNA Design
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Noise Reduction
1.Inductive degeneration is the technique widely
used in the tuned LNA design. 2. This technique
is applied to the design of every stage of the
CDA. 3.Adding source-degeneration inductor
improves the noise characteristic of the single
stage in the CDA.
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Measurements
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Measurements
Ps. . The integrated LNA achieves 10dB gain for
3dB bandwidth from 2.7GHz to 9.1GHz.
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Measurements
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Measurements
Ps.Distributed amplifiers usually have good input
and output return losses
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Measurements
2A.Bevilacqua and A.Niknejad, An
Ultra-Wideband CMOS LNA for 3.1 to 10.6GHz
Wireless Receivers, ISSCC Dig. Tech. Papers,
vol. 1, pp. 384 385, Feb. 2004.
6Chang-Wan Kim, et al., An ultra-wideband CMOS
low noise amplifier for 3-5-GHz UWB system,
Journal of solid state of circuit, vol. 40, pp.
544-547, Feb. 2005.
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Conclusion

• An ultra-low voltage UWB LNA was developed in a
  commercial 0.18µm CMOS technology.
• 2.Inductor degeneration technique is applied to
  the conventional distributed amplifier design for
  the first time to improve broadband noise
  characteristic.
• 3. A common-source single-stage amplifier is
  cascaded to the CDA to improve the gain for low
  voltage operation.
• 4. The integrated LNA achieves 10dB gain and
  4.65dB average noise figure for the 3-dB
  bandwidth from 2.7GHz to 9.1GHz.
• 5. Operated with a 0.6V power supply, the UWB
  CMOS LNA consumes only 7 mW.