Institute%20of%20Solid%20State%20Physics%20of%20the%20Bulgarian%20Academy%20of%20Sciences%20%201784%20Sofia,%2072,%20Tzarigradsko%20Chausse%20Fax:%20 359%202%20975%2036%2032;%20 359%202%20975%2036%2019%20http://www.issp.bas.bg

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Institute of Solid State Physics of the
Bulgarian Academy of Sciences 1784 Sofia, 72,
Tzarigradsko Chausse Fax [phone]
2 975 36 19http//www.issp.bas.bg

• The main scientific and applied achievements of
  the Institute are in the field of condensed
  matter physics, laser physics, theory of solid
  state, theory of phase transitions,
  superconductivity and superconductive materials,
  low temperature physics, liquid crystal physics,
  structure and properties of crystals and
  amorphous materials, atom and plasma physics,
  development of high precision thermometers,
  optical fibers, acoustoelectronic and
  microelectronic sensors. 

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• Laboratories
• Optics and Spectroscopy (total staff 30
  research scientists 28)
• Physical Problems of Microelectronics (total
  staff 23 res. scientists 14)
• Low Temperatures Physics (total staff 20
  research scientists 17)
• Acoustoelectronics (total staff 17 research
  scientists 6)
• Metal Vapors Lasers (total staff 14 research
  scientists 12)
• Photoelectrical and Optical Phenomena in Wide
  Band Gap Semiconductors
• (total staff 11 research scientists 8)
• Semiconductor Heterostructures (total staff 9
  research scientists 7)
• Theoretical Laboratory (total staff 9 research
  scientists 8)
• Atomic Spectroscopy (total staff 9 research
  scientists 7)
• Crystal Growth (total staff 8 research
  scientists 7)
• Cryogenic Technology (total staff 8 research
  scientists 3)
• Liquid Crystals (total staff 8 research
  scientists 7)
• Electron-Phonon Interactions (total staff 8
  research scientists 7)
• Biomolecular Layers (total staff 6 research
  scientists 6)
• X-ray Diffraction and Magnetic Resonance (total
  staff 6 res. scientists 4)
• Cooperative Phenomena in Condensed Matter (total
  staff5res. scientists2)

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• ISSP has at his disposal rich variety of
  equipments, precise methods and technologies
• Equipment and know-how for monocrystal growth
  from oxide materials for laser techniques and
  photorefractive effect applications
• X-ray diffraction with topographic,
  diffractometric and spectrometric facilities,
  spectroscopic ellipsometry, spectrophotometry in
  visible and IR regions, methods for electron
  microscopy and electron diffraction
  investigations
• Technologies for thin film deposition for
  microelectronic, optoelectronic and
  acoustoelectronic sensors and laser technology
  complex equipment for molecular beam epitaxy
• Equipment for synthesis and investigation of high
  temperature superconducting materials
• Equipment for Langmuir-Bloddget layer deposition
  on various substrates for molecular electronics
  polarization measurements in mesophases and
  polymer liquid crystals for display techniques
  equipment for video microscopy and micro
  manipulation of lipid membranes. 
• Lasers of various systems - metal vapor, hollow
  cathode, picosecond lasers for plasma physics and
  laser analysis of materials with possible
  application in ecology. 

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• Events
• 13th International School on Condensed Matter
  Physics
• Advances in the Physics and Technology of
  Solids and Soft Condensed Matter
• Co-organizer - The Electronic Materials
  Center at the
• University of Wales Swansea, U.K,
• August 30th September 3rd, 2004 Varna,
  Bulgaria
• Abstracts submission deadline - June 15, 2004
• http//www.issp.bas.bg/ISCMP/iscmp2004/
• The NATO Advanced Study Institute
• Nanostructured and Advanced Materials for
  Applications in Sensor, Optoelectronic and
  Photovoltaic Technology
• September 6 17, 2004, Sozopol, Bulgaria
• The web site of the school
  http//www.marshall.edu/nato-asi

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• International Cooperation
• ISSP works on many contracts funded by European
  Community and COPERNICUS program, on the contract
  of French-Bulgarian Laboratory "Vesicles and
  Membranes", on projects and bi-lateral
  conventions for collaboration with Universities
  and Research Institutes in Romania, Germany,
  France, Italy, USA Austria, Australia, Swiss,
  Greece, Russia, Ukraine, U.K., Poland, Hungary,
  Croatia etc. 
• http//www.issp.bas.bg

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• Laboratory Semiconductor Heterostructures
• Associated. Professors
• Simeon Simeonov, Ph. D head of the
  laboratory
• E-mail simeon_at_issp.bas.bg
• Anna Maria Szekeres, Ph. D E-mail
  szekeres_at_issp.bas.bg
• Sashka Alexandrova, Ph. D
• Parvane Danesh, Ph. D
• Sonya Kaschieva, Dr. Sci.
• Hikolay Peev, Ph. D
• Research scientist
• Elisaveta Kafedjiiska
• Ph.D students
• Tanya Nikolova,
• Alexander Gushterov

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• Present scientific research activities on
• Preparation and investigation of nano-sized
  heterostructures
• for modern micro- and optoelectronics
• Dielectric and semiconductor thin films
• Thermally grown ultrathin silicon dioxide on Si
• LPCVD and PECVD silicon oxynitride thin films on
  Si
• Hydrogenated amorphous silicon film
• APCVD and PECVD transition metal oxides (MoO3 and
  WO3 )
• thin films
• Measurement techniques
• Capacitance-voltage and conductance-voltage
  measurements
• at different frequencies (1 Hz- 1 MHz) and
  temperatures (77 - 300 K)
• Current-voltage measurements at different
  temperatures (77 - 300 K)
• Deep level transient spectroscopy (DLTS)
• Spectral ellipsometry in the range of light
  250-850 nm

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• The Laboratory has bi-lateral conventions for
  collaboration with Universities and Research
  Institutes in Romania, Hungary, Ukraine and
  Russia.
• Current projects
• Electrical and optical properties of
  CNx-Si,WCx-Si, AlNx-Si, SiCx-Si and BNx-Si
  heterostructures, ISSP of
• BAS - National Institute of Laser, Plasma and
  Radiation Physics of the Romanian Academy of
  Sciences
• Preparation and investigation of thin oxide
  layers and semiconductors for microelectronics
  and
• optoelectronics, ISSP of BAS Institute of
  Physical Chemistry of the Romanian Academy of
  Sciences
• Study of dopant redistribution in ion implanted
  semiconductor heterostructures after hgh-energy
• irradiation, ISSP of BAS - Institute of
  Nuclear Research and Nuclear Energy, Dubna,
  Russia
• Investigation of semiconductor structures,
  ISSP of BAS - Institute of Metal Physics of the
• Russian Academy of Sciences
• Investigation of structure, structural stress
  and properties of thin dielectric-silicon
  structures for
• application in micro- and nanoelectronics,
  ISSP of BAS - Institute of Semiconductor Physics
• of the Ukraine National Academy of Sciences
• Investigation of defects in semiconductor
  structures with double irradiation, ISSP of BAS
  - Institute
• of Semiconductor Physics of the Ukraine
  National Academy of Sciences
• Optical and elektrical properties of
  semitransparent metal films on semiconductors,
  ISSP of BAS
• Institute of Semiconductor Physics of the
  Ukraine National Academy of Sciences
• Structure and properties of thin metal oxide
  films, ISSP of BAS - Eotvos L. University,
  Hungary
•  Interaction of defects generated by ion
  implantation and other high energy irradiations
  in Si/SiO2