Development of the single-crystal organic field-effect transistors (OFETs) at Rutgers enabled the exploration of transport phenomena in organic semiconductors and the fundamentals of organic electronics. The main results of the 2nd year of the project:

1

• Development of the single-crystal organic
  field-effect transistors (OFETs) at Rutgers
  enabled the exploration of transport phenomena in
  organic semiconductors and the fundamentals of
  organic electronics. The main results of the 2nd
  year of the project
• the first real space molecular resolution
  images of the surface of a single crystal
  organic semiconductor
• E. Menard et al., Adv. Mater. 18, 1552-1556
  (2006)
• observation of the Hall effect in OFETs first
  direct measurements of the density of mobile
  field-induced carriers in the OFET channel
• V. Podzorov et al., Phys. Rev. Lett. 95, 226601
  (2005).
• the first review on the fundamentals of charge
  transport in single-crystal organic transistors
• M. E. Gershenson et al., Rev. Mod. Phys., Sept.
  2006
• fast carrier dynamics of light-induced
  excitations in organic crystals
• H. Najafov et al., Phys. Rev. Lett. 96, 056604
  (2006)
• O. Ostroverkhova et al., Appl. Phys. Lett. 88,
  162101 (2006).
• ultrasensitive sensing with organic
  field-effect transistors
• V. Podzorov et al., Appl. Phys. Lett. 87, 093505
  (2005).

air-gap organic single-crystal field-effect
transistor
2
single-crystal rubrene OFET

• Education
• Res. Assoc. and co-PI Vitaly Podzorov
• Undergrad. students Matt Calhoun and Javier
  Sanchez
• Collaborators
• I. Biaggio, H. Najafov (Lehigh U.)
• D. Frisbie (U. Minnesota)
• J. Rogers, E. Menard (UIUC)
• A. Morpurgo (Delft Tech. U.)
• D. Fichou (CEA-Saclay)
• O. Ostroverkhova, F. Hegmann (U. Alberta)
• J. Anthony (U. Kentucky)

MG and VP were co-organizers of the ICAM Workshop
on Electronic Phenomena in Single-Crystal Organic
Semiconductors, Baltimore, March, 2006, which
attracted 40 leading researchers from the USA,
Japan, France, Italy, the Netherlands, Great
Britain, and Switzerland. http//www.physics.rutge
rs.edu/ICAM-EPOS
Our results have been recognized by Scientific
American as one of the major contribution to the
development of flexible electronics in 2005.
Scientific American 50 Award, Scientific
American, Dec. 2005.