0.37 mS/mm In0.53Ga0.47As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain - PowerPoint PPT Presentation

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0.37 mS/mm In0.53Ga0.47As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain

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IBM High-k Metal gate transistor. Image Source:EE Times. Lg. LS/D ... TLM data does not explain 500 W-mm observed FET source resistance. FET. Regrowth TLMs ... – PowerPoint PPT presentation

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