Spin and Charge Transport in Carbon-based Molecular Devices - PowerPoint PPT Presentation

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Spin and Charge Transport in Carbon-based Molecular Devices

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F. Grossmann, RG and R. Schmidt, ChemPhysChem 3, 101 (2002) ... Paramagnetic case P=0 ~4e2/h=2G0 ~2e2/h=1G0. see also e.g., S. Sanvito et al. Phys. ... – PowerPoint PPT presentation

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Title: Spin and Charge Transport in Carbon-based Molecular Devices


1
Spin and Charge Transport in Carbon-based
Molecular Devices
  • Rafael Gutierrez
  • Molecular Computing Group
  • University of Regensburg
  • Germany

2
Carbon-based electronics

http//www.pa.msu.edu/cmp/csc/nanotube.html
3
Outline
4
Methodology
Green function techniques
F. Grossmann, RG and R. Schmidt, ChemPhysChem 3,
101 (2002)
5
CNT-C60-CNT junctions
Motivation C. Joachim et al. Phys. Rev. B 58,
16407 (1998)  compression  J. J. Palacios
et al. Nanotechnology 12, 160 (2001) charge
transfer

doping
Alternative way to modify the transmission ?
RG, G. Fagas, G. Cuniberti, F. Grossmann, K.
Richter, and R. Schmidt, Phys. Rev. B65, 11341
(2002)
6
  • Structural optimization is essential
  • Strong mixing of CNT-states with C60 molecular
    orbitals lifting of degeneracies

7
  • Strong orientational dependence of the
    conductance!
  • Variations of 2-3 orders of magnitude near EF

8
Do the caps introduce something new ?
9
Evolution of the projected DOS with increasing
(a-gtd) CNT-C60 separation
10
Metallisation via unconventional MIGS
NO !
RG, G. Fagas,K. Richter, F. Grossmann and R.
Schmidt, Europhys. Lett. 62, 90 (2003)
11
Switching behaviour
12
GMR in FM-MWCNT-FM junctions
13
A minimal model
14
Paramagnetic case P0
  • Conductance(EF ,tin0) 2G0 for full contacted
    MWCNT expected value for infinite metallic DWCNT
    4G0 (tin0)
  • channel blocking charge transferCNT-metal
    contact symmetry

see also e.g., S. Sanvito et al. Phys. Rev.
Lett. 84, 1974 (2000) J. J. Palacios et al.
Phys. Rev. Lett. 90, 106801 (2003)
15
Ferromagnetic case P0.5
  • full contact GMR lt 0
  • partial contact GMR gt 0
  • GMR weakly affected by tin
  • Charge neutrality essential

S. Krompiewski, RG and G. Cuniberti,
cond-mat/0402359
16
Elastic transport
charge
spin
CNT-C60-CNT
GMR in FM-DWCNT-FM junctions
(capped) CNT-C60-CNT
Incommensurability structural disorder
Inelastic transport electron-vibron
coupling Keldysh NEGF techniques

17
Acknowledgements
G. Cuniberti (MC-Group,Uni Regensburg) G. Fagas
(NMRC, Cork, Ireland, Poster) K. Richter (Uni
Regensburg) S. Krompiewski (IfMP-Poznan,
Poster) M. Hartung (Uni Regensburg, Poster) N.
Ranjan (TU-Dresden, Poster) G. Seifert (TU
Dresden, Talk Fri. 1135) F. Grossmann
(TU-Dresden) R. Schmidt (TU-Dresden) A. Di Carlo
(Tor Vergata, Rome, Talk Wed. 1430) A. Pecchia
(Tor Vergata, Rome, Poster) M. Gheorghe (Uni
Regensburg, Poster) C. Böhme (Uni Marburg)
MPIPKSADMOL
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