Asia Pacific Non-volatile memory market to grow at the highest rate during the forecast period

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MarketsandMarkets Presents

Non-Volatile Memory Market Industry Share,
Trends, Future Scope 2027 Non-Volatile Memory
Market by Type (Flash, EPROM, nvSRAM, EEPROM, 3D
NAND, MRAM, FRAM, NRAM, ReRAM, PMC), Wafer Size
(200 mm, 300mm), End-user (Consumer Electronics,
Enterprise Storage, Healthcare, Automotive) and
Region - Global Forecast to 2027 https//www.mark
etsandmarkets.com/Market-Reports/non-volatile-memo
ry-market-1371262.html
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247 Pages Report The non-volatile memory
market is projected to grow from USD 74.6 billion
in 2022 to USD 124.1 billion by 2027 it is
expected to grow at a CAGR of 10.7 from 2022 to
2027.  The key factors fueling the growth of the
market include the high-performance and high
storage which offers long-term storage
capability. High volume sales of consumer
electronics, shift towards SSDs, expanding data
centers, and digitalization of various sectors
automotive, healthcare, telecommunications, and
others. Browse 189 market data Tables and 64
Figures spread through 247 Pages and in-depth TOC
on "Non-Volatile Memory Market by Type (Flash,
EPROM, nvSRAM, EEPROM, 3D NAND, MRAM, FRAM, NRAM,
ReRAM, PMC), Wafer Size (200 mm, 300mm), End-user
(Consumer Electronics, Enterprise Storage,
Healthcare, Automotive) and Region - Global
Forecast to 2027"
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The 300 mm wafer size segment exhibits the
highest CAGR in the Non-volatile memory
market Nearly all new fab upgrades and
construction activities are taking place with 300
mm wafer processing. Over the last several years,
there has been a tremendous increase in 300 mm
(12") wafer usage. Nearly all major chip
manufacturers have either already built or have
plans to build 300 mm fabrications, and nearly
all equipment manufacturers have designed their
new equipment with 12" wafers. All 300 mm wafers
are double-side polished and have a notch
identical to the notch found on 200 mm wafers.
Typically, over 600 or more chips can be
manufactured from one 300 mm wafer. There are
about 28 companies that own and operate 300 mm
wafer fabs. The distribution of 300 mm wafers is
controlled by the five manufacturers who own over
three-quarters of the global 300 mm IC capacity
including SAMSUNG, Micron Technology, Inc., SK
HYNIX INC., TSMC, and Western Digital
Technologies, Inc. Ask PDF Brochure https//www.
marketsandmarkets.com/pdfdownloadNew.asp?id137126
2 Flash memory segment to hold the largest size
of Non-volatile memory market  Flash memory is an
electronic non-volatile computer storage device
that can be electrically erased and reprogrammed.
There are two main types of flash memory NAND
and NOR. The internal characteristics of the
individual flash memory cells exhibit
characteristics like those of the corresponding
NAND and NOR gates. Unlike EPROMs where data
needs to be completely erased before being
rewritten, NAND-type flash memory may be written
and read in blocks (or pages), which are
generally much smaller than the entire device.
The NOR type allows a single machine word (byte)
to be written or read independently. Flash memory
is widely adopted in consumer electronics,
enterprise storage, and industrial applications.
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Asia Pacific Non-volatile memory market to grow
at the highest rate during the forecast
period The Asia Pacific region is expected to be
one of the key markets for non-volatile memory in
the future, owing to the varied applications of
non-volatile memory. The market growth can be
attributed to the region's high population
density, making it a high-potential market for
consumer electronic products. The increasing
demand for non-volatile memory in consumer
electronic products is driving the market in Asia
Pacific. The Asia Pacific region comprises some
of the leading countries in the field of
electronics, such as China, Japan, Taiwan, and
India. The region is a hub for significant
semiconductor and electronics manufacturing. This
is one of the vital factors fueling the market in
the region. Request Free Sample
Pages https//www.marketsandmarkets.com/requestsa
mpleNew.asp?id1371262 The major players in the
non-volatile memory market are SAMSUNG (South
Korea), Western Digital Technologies, Inc. (US),
KIOXIA Holdings Corporation (Japan), Micron
Technology, Inc. (US), and SK HYNIX INC. (South
Korea) among others. The other companies profiled
in the report are Microchip Technology Inc. (US),
ROHM CO., LTD. (Japan), Renesas Electronics
Corporation (Japan), STMicroelectronics (US),
Infineon Technologies AG (Germany), Nantero, Inc.
(US), Crossbar Inc. (US), Everspin Technologies
Inc. (US), Winbond (Taiwan), Pure Storage, Inc.
(US), Fujitsu (Japan), Viking Technology (US),
NVMdurance (Ireland), Avalanche Technology (US),
SMART Modular Technologies (US), Flexxon Pte Ltd
(Singapore), YMTC (China), ATP Electronics, Inc.
(Taiwan), HT Micron (Brazil), and SkyHigh Memory
Limited (China).
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Opportunity Advent of innovative technologies
for IoT applications The increasing replacement
of traditional memories with emerging
non-volatile memories offers a significant
opportunity for market players. Traditional
memory technologies, such as DRAM and flash, have
captured a major share of the memory technology
market. However, emerging non-volatile memory
technologies entering the memory technology
market are expected to replace existing memory
technologies, such as DRAM and flash. Traditional
flash memories have limitations, such as slow
switching rate, high latency, and low
scalability. They face limitations of scalability
below 90 nm while using floating gate technology
and consume more power than other emerging memory
technologies. Currently, flash memories are being
used in smartphones, tablets, and PDAs. The major
alternatives to flash memories are 3D NAND,
ReRAM, NRAM, and MRAM, which are superior to
flash memories in terms of latency, switching
time, endurance, write cycle, and data
retention. AI and IoT integrated solutions are
major users of such technologies. A non-volatile
memory that supports fast writes and can be shut
down fully but quickly restarted. MRAM is a good
fit for the IoT and AI use cases since it has
better capacity, density, power requirements,
quick writing performance, and extremely low read
latency. While ReRam is suited for in-memory
computing. A second-generation ReRAM device is
being developed in collaboration between Fujitsu
and Panasonic. Additionally, SMIC (China) is
developing a 40 nm ReRAM technology that Crossbar
Inc. is sampling.   Challenge Optimization of
storage densities and capacities Memory storage
density stores the information bits on a computer
storage medium. Higher-density memory is more in
demand as it allows greater volumes of data to be
stored in the same physical space. Thus, storage
density directly correlates with a given mediums
storage capacity. Storage density also has a
fairly direct effect on performance and
price. High-density memories such as RRAM, NAND
flash, and NVDIMM face numerous challenges
related to poor scalability. Scalability refers
to the ability of a product to function well even
when there is a change in its size and capacity.
These memories cannot adhere to the required
endurance, noise margin, and reliability levels.
There are also issues related to scalability in
flash memory, which have been difficult to
overcome. In addition, there is limited capacity
for electron storage in high-density non-volatile
memories. The impact of this challenge is high at
present, but it is expected to reduce in the near
future.
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