GaN Power Device Market Size, Share & Rising Trends Analysis, Forecast By Product Type, Growth Strategies, Opportunity, Challenges, and Revenue Analysis by 2026

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GaN Power Device Market Size, Share Rising
Trends Analysis, Forecast By Product Type, Growth
Strategies, Opportunity, Challenges, and Revenue
Analysis by 2026
GaN Power Device Market By Device Type (Power
Device, RF Power Device, GaN Power Modules, GaN
Power Discrete Devices,  GaN Power ICs), Voltage
Range (lt200 Volt, 200600 Volt, gt600 Volt),
Application (Power Drives, Supply and Inverter,
Radio Frequency), Vertical (Telecommunications,
Industrial, Automotive, Renewable, Consumer and
Enterprise, Military, Defense and Aerospace,
Medical), Technology (4H-SiC MOSFET, HEMT,
Others), Wafer Material (GaN SiC, GaN Si),  Wafer
Size (Less than 150mm, 150mm-500mm, More than 500
mm), Geography (North America, Europe,
Asia-Pacific, South America, Middle East and
Africa) Industry Trends and Forecast to 2026
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Report Description
Global GaN power device market is set to witness
a healthy CAGR of 29.45 in the forecast period
of 2019- 2026. The report contains data of the
base year 2018 and historic year 2017. Increasing
usage of GaN in 5G infrastructure and advancement
in GaN power devices is the major factor for the
growth of this market. GaN or gallium nitride is
a material which is specially designed for the
manufacturing of the semiconductor power devices
and RF components and is also used as a
replacement for silicon semiconductor. RF power
device, GaN power module, power device, GaN power
discreates devices and other are some of coomon
type of GaN devices. These devices are widely
used in applications such as radio frequency,
power drives and supply and inverter. Gallium
devices are widely used in application such as
telecommunication, automotive, military, medical,
and others. Increasing demand for electric device
is the factor fuelling the growth of this
market.
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t
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Major Key Players

• Some of the major players operating in this
  market are
• Cree, Inc.
• Infineon Technologies AG
• Qorvo, Inc.
• MACOM
• Microsemi
• Mitsubishi Electric Corporation
• Efficient Power Conversion Corporation.
• GaN Systems
• Navitas Semiconductor.
• TOSHIBA ELECTRONIC DEVICES STORAGE CORPORATION

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Market Segmentation

• By Device Type (Power Device, RF Power Device,
  GaN Power Modules, GaN Power Discrete Devices, 
  GaN Power ICs)
• By Voltage Range (lt200 Volt, 200600 Volt, gt600
  Volt)
• By Application (Power Drives, Supply and
  Inverter, Radio Frequency)

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Regional Analysis

• Based on geography, the market is segmented into
  five geographical regions
• North America
• Europe
• Asia-Pacific
• South America
• Middle East
• Africa

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