GaN and SiC Power Semiconductor Market

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Global GaN and SiC Power Semiconductor Market
Industry Trends and Forecast to 2026
Global GaN and SiC Power Semiconductor Market By
Product (Sic Power Module, GaN Power Module,
Discrete SiC, Dicrete GaN), Application (Power
Supplies, Industrial Motor Drives, H/EV, PV
Inverters, Traction, Others), Geography (North
America, Europe, Asia-Pacific, South America,
Middle East and Africa) Industry Trends and
Forecast to 2026
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global-gan-and-sic-power-semiconductor-market
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Report Description
Global GaN and SiC power semiconductor market is
set to witness healthy CAGR of 30.12 in the
forecast period of 2019- 2026. GaN or gallium
nitride is materials which are mainly used for
the development of different semiconductor power
devices, light emitting diodes and RF components.
SiC or silicon carbide is a semiconductor which
is made from silicon and carbide. These compound
semiconductors have more electric field strength,
band gap as compared to the silicon.
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Major Key Players

• Some of the major players operating in this
  market are
• Fuji Electric Co., Ltd
• Infineon Technologies AG
• Littelfuse, Inc.
• Microsemi
• Mitsubishi Electric Corporation
• Renesas Electronics Corporation
• ROHM SEMICONDUCTOR
• SANKEN ELECTRIC CO.,LTD.
• STMicroelectronics
• Epiluvac
• IQE PLC
• Transphorm Inc.

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Market Segmentation

• By Product (Sic Power Module, GaN Power Module,
  Discrete SiC, Dicrete GaN)
• By Application (Power Supplies, Industrial Motor
  Drives, H/EV, PV Inverters, Traction, Others)
• By Geography (North America, Europe,
  Asia-Pacific, South America, Middle East and
  Africa) 

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Regional Analysis

• Based on geography, the market is segmented into
  five geographical regions
• North America
• Europe
• Asia-Pacific
• South America
• Middle East
• Africa

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