dBm%20Engineering - PowerPoint PPT Presentation

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dBm%20Engineering

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High Power Amplifier Design Challenges ... techniques may not produce hardware that faithfully recreates the target ... Top-level tuning and design centering ... – PowerPoint PPT presentation

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Title: dBm%20Engineering


1
Sub 1 Ohm Broadband Impedance Matching
Network Design Methodology for High Power
Amplifiers   W. McCalpin   dBm Engineering,
Inc., Boulder, CO
dBm Engineering 5446 Conestoga Ct. Boulder, CO
80301 dBmEngineering.com
2
High Power Amplifier Design Challenges
A fixed-tuned broadband 50-Ohm test fixture is
required with the following design constraints
  • Prototype RF Power Transistor Single-Ended 250W
    Pulsed LDMOS part
  • The design bandwidth required is 15 (1200 to
    1400 MHz) as compared to 3 for Wireless bands
  • High Power Pulsed Load Pull measurements have
    produced sub-1 Ohm target Load / Source
    impedances (ZLoad0.8 j1.0) to be held nearly
    constant over the bandwidth of interest

3
Prototype 250W Pulsed Power LDMOS Transistor
4
Outline
  • Motivation
  • Load Pull Impedance Accuracy
  • Proposed Simulation / Design Method
  • Matching Network Topology Selection
  • Simulation of Ideal Topology / Trajectory
  • Conversion of Ideal Circuit Simulation to a
    Physically-based Circuit Simulation
  • Fabrication of TRL Verification and DUT fixtures
  • Comparison of Measured vs. Simulated Trajectory
    and ZLoad
  • Summary

5
Motivation
Q Why is it difficult to go from High Power
Load Pull measurements to working hardware? Q
Why do RF Power engineers still commonly rely
heavily upon intuition, tuning and iteration?
  • Is Load Pull wrong?
  • The target impedances generated from doing Load
    Pull may not be accurate enough to truly
    represent what the DUT actually sees.
  • and / or
  • Is the simulation / design process wrong?
  • Common simulation techniques may not produce
    hardware that faithfully recreates the target
    impedances (when the designer fabricates the
    physical circuit from the simulated circuit).

6
Load Pull Tuner Impedance Accuracy
(calibrated impedance vs. actual impedance during
measurement)
e.g. for a ZCal point, what is the Output Tuners
Load reflection coefficient when ZMeas is
normalized to the ZCal point
7
Load Pull Tuner Impedance Accuracy (cont.)
Focus Microwaves - PMT Load Pull System
The Tuner by itself
Tuner
Tuning to the indicated points
Worst Case R.L.(dB) meas. - 51 dB
Tuning repeatability
Worst Case R.L.(dB) meas. - 47 dB
(Based on a TRL 7/16 Connectorized VNA
calibration with Sii -60 dB)
8
ZLoad Impedance Accuracy at the DUT plane
(Based on a TRL Impedance Transforming PCB VNA
calibration with Sii -41 dB)
9
Load Pull Tuner Impedance Accuracy (cont.)
  • Given the proper discipline in calibration and
    setup, the accuracy of the Load Pull targets is
    very good
  • Load Pull targets should be useful for design
    as well as device characterization

10
Proposed Simulation / Design Method
  • Ideal impedance matching network topology /
    trajectory simulation (using circuit models and
    lumped elements)
  • Identification of the circuit response to tuning
    variations
  • Conversion of distributed elements to EM based
    multi-port S-parameter blocks
  • Conversion of lumped element models to measured
    one-port and two-port S-parameter blocks
  • Simulation refinement and design centering

11
Proposed Simulation / Design Method (cont.)
  • Design and fabrication of a TRL verification
    fixture and the break-apart DUT impedance
    matching fixture
  • Assembly of each half of the DUT fixture with
    component by component verification of the
    impedance matching trajectory using the TRL
    verification fixture
  • Full DUT fixture assembly
  • Top-level tuning and design centering
  • Break-apart measurement of the final Load and
    Source impedances.

12
Ideal Topology / Trajectory Simulation
Output Matching Network
50 Ohms
Z0 4.48 Ohms
13
Conversion of Distributed Elements to EM based
Simulation (using Momentum)
Generates a 13 port .s13p file to import into ADS
to combine with the measured .s1p files of the
components
14
Conversion of Lumped element circuit models to
measured s1p and s2p files
  • Measured using 50-Ohm TRL standards either
    wafer-probed (preferred) or connectorized (as
    shown)
  • Using the application substrate and component
    mounting configuration to include all substrate
    parasitic effects
  • Commercially available Model Libraries are
    ideal parameterized to substrate material, full
    range of values by product type, accurate and
    wideband to include harmonic frequencies, etc.

15
Design and Fabrication of a Break-Apart DUT
Impedance Matching Fixture
Fabricated to be Break-apart using the substrate
selected for the application
16
Design and Fabrication of an Impedance
Transforming TRL Verification Test Fixture
Fabricated on the substrate to be used in the
application with a line width equal to the lead
width of the DUT (500 mils)
17
Measurement of the DUT Break-apart fixture using
the TRL Verification fixture
After TRL calibration using the Verification
fixture, multiple measurements can be made as
each lumped component is added
18
Simulated vs. Measured ZLoad Impedance Trajectory
19
(No Transcript)
20
Summary
Invest in your Methodology!
  • High Power Load Pull is useful for design as well
    as characterization
  • Choose a topology that will hit the required
    impedance targets and achieve the desired
    matching network trajectory
  • Replace the ideal circuit elements with EM and
    measurement based elements as early as possible
  • Verify each simulated step by measuring at every
    step
  • Know the impacts of tuning locations and keep
    them small
  • Center and finalize the tuning and
  • measure the final impedances
  • Improve the process

21
References
1 D. Williams and D. Walker, On-Wafer
Measurement Accuracy, ARFTG Short Course on
Measurements and Metrology for RF
Telecommunications, November 2000 2
http//www.boulder.nist.gov/micro
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