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Thermal Chemical Vapor Deposition of Silicon Carbide Films for Optoelectronic Applications

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Title: Thermal Chemical Vapor Deposition of Silicon Carbide Films for Optoelectronic Applications


1
Thermal Chemical Vapor Deposition of Silicon
Carbide Films for Optoelectronic Applications
Aaron Angerami Mame Diop, Spyros Gallis,
and Harry Efstathiadis, Ph.D.School of
NanoSciences and NanoEngineeringUniversity at
Albany - SUNY
2
Outline
  • Introduction
  • Motivation Why SiC?
  • Experimental procedure
  • TCVD1 process of SiC films
  • Results
  • Effect of Substrate Temperature on Film
    Composition
  • Conclusions
  • Future Directions
  • 1 TCVD- Thermal Chemical Vapor Deposition

3
Motivation Why SiC?
  • Due to its wide band gap and excellentmechanical
    , chemical, and physical properties, SiC has
    emerged as a promising material for advanced
    electronic devices that can be used under
    extremelyharsh conditions.
  • SiC has also been considered as a good candidate
    for novel optoelectronic devices producing light
    in the visible spectral range from blue to
    yellow.

I. G. Ivanov, et.al., Phys. Rev. B 64, (2001) T.
Ma, et.al., J. Appl. Phys. 88, 6408 (2000)
4
Summer internship objectives
  • Become familiar with CVD processes
  • Gain hands-on experience with various analytical
    techniques, such as Fourier Transform Infrared
    (FTIR), Ellipsometry, Auger Electron Spectroscopy
    (AES).
  • Use a stand alone CVD tool to deposit SiC films.
  • Employ a nonhalide precursor from the family of
    polysilyenemethylenes (PSMs), known as SP-4000,
    as the silicon and carbon source to grow SiC
    films.
  • Determine the effects of varying the substrate
    temperature on the film characteristics using
    FTIR and AES.

5
Experimental setup and process parameters for SiC
film deposition
6
Experimental procedure (contd)
  • Nonhalide precursor from family of
    polysilyenemethylenes (PSMs), -SiH2-CH2-n , n
    2 8, as Si and C source
  • Substrates used Si pieces

7
Typical AES depth profile of a 225 nm-thick film
Results
  • Typical spectra show
  • SiC ratio 11
  • Low atomic percentage of N and O
  • Uniform composition throughout the bulk of the
    film

8
Typical FTIR spectrum of a 225 nm-thick SiC film
Si -C
CO2
  • A Typical spectra should exhibit
  • a prominent peak around 800 cm-1 which is
    indicative of Si-C
  • No peak related to C-H (s) near 3000 cm-1

9
Effect of Substrate Temperature on Film
Composition
  • Films were deposited at substrate temperatures of
    700 C, 800 C and 900C.
  • These films were then analyzed with AES and FTIR.

Relative at. Carbon
Temperature C
  • The amount of carbon in the films was found to
    increase with substrate temperature by as
    determined AES.

10
Results
Films grown at a substrate temperature of
900C
700C
C-H, C-C
Si-C
O-H
CH2
Si-H
Si-H
O-H
Si-C
C-H, C-C
CO2
CO2
CH2
  • FTIR provides information on bonding
    configuration
  • Films grown at 900C were found to be carbon rich
    which is consistent with AES measurements

11
Conclusions
  • Acquired hands-on experience with TCVD of SiC,
    FTIR, AES.
  • Deposited SiC films with a non-halide precursor
    at temperatures as low as 700ºC.
  • Performed structural and chemical
    characterization of the resulting SiC films
    deposited on Si substrates.
  • Films grown at the substrate temperature 800ºC
    were found with SiC 1.0 and lt 5 at.  O and N.
  • Investigated the effect of substrate temperature
    on film composition

12
Future Directions
  • Systematically investigate TCVD processing
    parameters and their effect on the a-SiC film
    characteristics. In particular, optimize film
    characteristics for Er doping.
  • Perform annealing of the a-SiC films at
    different temperatures.

Acknowledgements
Work supported by the New York State Center for
Advanced Thin Film Technology at the University
at Albany SUNY and The Research Foundation of
State University of New York. Richard Moore at
the School of NanoSciences and NanoEngineering of
the University at Albany - SUNY. Denise
Wilson. Starfire Systems, Inc.
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