PN Junction, Schottky Junction, Hetero Junction,

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PN Junction, Schottky Junction, Hetero Junction,
MOS Capacitor, or Gated Diode is found at the
heart of electronic or photonic devices
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PN Hetero Junctions at the heart of Device
SiGe HBT
GaN HBT
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PN Hetero Junctions at the heart of Device
SiGe HBT
E
p Si
GaN HBT
B
E
n SiGe
n AlGaN
P GaN
B
Minority-carrier injection
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PN Hetero Junctions at the heart of Device
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PN Hetero Junctions at the heart of Device
InAsSbP
P
InAsSb
i
N
InAsSbP
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PN Junction is at the heart of Device
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Schottky Junction is at the heart of Device
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Schottky Junction is at the heart of Device
Al
n-Si
Electron is charge carrier from S to D
Majority carrier device Depletion-mode device
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MOS and Hetero Junction are at the heart of Device
IG-MODFET
IGFET
MESFET
HEMT
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MOS and Hetero Junction are at the heart of Device
Al2O3
i-AlGaN
i-GaN
channel
n-AlGaN
IG-MODFET
2D electron gas channel
i-GaN
IGFET
Metal
n-GaAs
MESFET
n-AlGaAs
2D electron gas
i-GaAs
HEMT
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MOS Capacitor is at the heart of Device
GaAs MOSFET
Si-MOSFET
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MOS Capacitor or Gated Diode is at the heart of
Device
Metal
Al, Cu, Au, poly-Si
Oxide
SiO2, Ga2O3
Semicon
Si, GaAs
GaAs MOSFET
(Depletion Mode)
MOS Gate
Metal
Oxide
p-Si
n-Si
Gated Diode MOS PN
Si-MOSFET
(Enhancement Mode)
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SUNY-Buffalo EE Courses
--- Microelectronics, Photonics and Materials
Area
Physics of PN, Schottky (MS), and Heterojunctions

522 Nanostructure Materials 524 Introduction to
Nanoelectronics 555 Photonic Devices 558 Quantum
Devices 563 Semiconductor Materials 589 Lasers
and Photonics 594 Consumer Optoelectronics 636
Defects in Semiconductors

Physics of MOS, Gated Diode, PN (incl.
Heterojunction)
588 VLSI Devices
Fabrication of PN, MS, MOS, and Integrated
Circuits
548 Microelectronic Device Fabrication 549
Analog Integrated Circuits Layout 553
Microelectronic Fabrication Laboratory
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