Measurement and Simulation of the Variation in ProtonInduced Energy Deposition in Large Silicon Diod

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Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays

• Christina L. Howe1, Robert A. Weller1, Robert A.
  Reed1,
• Brian D. Sierawski2, Paul W. Marshall3, Cheryl J.
  Marshall4,
• Marcus H. Mendenhall5, Ronald D. Schrimpf1, and
  J. E. Hubbs6

1. Department of Electrical Engineering and
Computer Science, Vanderbilt University,
Nashville, TN 37235 2. Institute for Space and
Defense Electronics, Vanderbilt University,
Nashville, TN 37235 3. Consultant, Brookneal, VA
24528 4. NASA-GSFC, Greenbelt, MD 20771 5.
Free-Electron Laser Center, Vanderbilt
University, Nashville, TN 37235 6. Ball Aerospace
Technologies Corp., Albuquerque, NM 87117
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Outline

• Background
• Motivation
• Experimental Setup
• Modeling Description
• Results
• Simulation compared with experimental results
• Contribution from reaction mechanisms
• Event rate calculation
• Conclusions

Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays
christina.l.howe_at_vanderbilt.edu
3
Background

• Focal plane arrays (FPAs) often used on
  satellites planned for long orbits in harsh
  proton environments
• FPAs Advantages
• Flexible, reliable, low cost, high-density
  resolution, on-chip signal processing, and more
  radiation tolerant to protons than charge coupled
  devices (CCDs)

Basic hybrid FPA
Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays
christina.l.howe_at_vanderbilt.edu
4
Motivation

• Proton events contribute to device noise floor
• Better understanding of how radiation-induced
  energy deposition occurs will improve prediction
  techniques
• Accurate modeling helps predict on-orbit response

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es.html

• We will show a high-fidelity prediction method
  based on Monte Carlo simulations and a
  mathematical model

Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays
christina.l.howe_at_vanderbilt.edu
5
Experimental Setup

• Hybrid FPA consisting of a silicon p-i-n
  128 128 detector array with hardened CMOS
  readout integrated circuit (ROIC)
• Full radiometric characterizations were performed
• Dark current, noise, responsivity, and
  sensitivity
• Irradiated with 63 MeV protons at 45
• Biased to 15V resulting in full depletion
• Exposed at 233 K

Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays
christina.l.howe_at_vanderbilt.edu
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Modeling Description

• MRED (Monte Carlo Radiative Energy Deposition), a
  GEANT4 based tool, used for simulation

• TCAD simulations revealed RPP assumption was
  sufficient to estimate device response to
  radiation

Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays
christina.l.howe_at_vanderbilt.edu
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Modeling Description

• Each event in Monte Carlo simulation represents
  only one primary particle hit one pixel, but
• Non-negligible probability of multiple hits on a
  single pixel (pile up) exists
• Non radiation induced noise in experimental data

Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays
christina.l.howe_at_vanderbilt.edu
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Pile Up
µ 0.08 sNOISE 3
After Pile Up
Before Pile Up
Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays
christina.l.howe_at_vanderbilt.edu
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Results
Statistical floor of experimental data
Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays
christina.l.howe_at_vanderbilt.edu
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Constant-LET and Path Length Distribution
Calculation

• Does not predict occurrence of large energy
  depositions
• Does not predict shape of curve

Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays
christina.l.howe_at_vanderbilt.edu
11
Reaction Mechanisms

• Nuclear reactions dominate above 500 keV
• Coulomb scattering does not contribute
  significantly here

Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays
christina.l.howe_at_vanderbilt.edu
12
Event Rate Simulations

• Proton environments from CREME
• GEO peak five minutes and worst week
• ISS space station orbit, apmin8

Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays
christina.l.howe_at_vanderbilt.edu
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GEO Event Rate Simulations
Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays
christina.l.howe_at_vanderbilt.edu
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ISS Event Rate Simulations
Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays
christina.l.howe_at_vanderbilt.edu
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Conclusions

• The on-orbit response can be predicted with
  greater detail than available through experiment
  at energies greater than 700 keV
• Energy events greater than 130 keV are not
  predicted by path length calculation for this
  device
• Nuclear reactions dominate the event rate at
  energies greater than 3 MeV

Measurement and Simulation of the Variation in
Proton-Induced Energy Deposition in Large Silicon
Diode Arrays
christina.l.howe_at_vanderbilt.edu