Electronic Current Overflow and Inhomogeneous Hole Distribution of the InGaN Quantum Well Structures - PowerPoint PPT Presentation

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Electronic Current Overflow and Inhomogeneous Hole Distribution of the InGaN Quantum Well Structures

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When the doping level is at 3 1019 cm-3, the threshold current is 43.22 mA and ... L-I curves for various doping concentration of the barriers. 91/10/17 ... – PowerPoint PPT presentation

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