Characterization of Thin Films Grown by Pulsed Laser Deposition and EBeam Vaporization - PowerPoint PPT Presentation

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Characterization of Thin Films Grown by Pulsed Laser Deposition and EBeam Vaporization

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To improve p-contacts for LEDs that are transparent and conductive ... Reflectometer Apparatus. Reflection Spectra. 5 Ni/2 Au E-Beam Run. Annealing ... – PowerPoint PPT presentation

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Title: Characterization of Thin Films Grown by Pulsed Laser Deposition and EBeam Vaporization


1
Characterization of Thin Films Grown by Pulsed
Laser Deposition and E-Beam Vaporization
  • Theodore Robert Harris
  • UNCC Electrical Engineering

National Institute of Science
Technology Materials Science and Engineering
Laboratory Electronic and Optoelectronic
Materials Group
2
Overview, Goals
  • To improve p-contacts for LEDs that are
    transparent and conductive
  • Variables are annealing temperature and time,
    film thickness ratios, and deposition technique

LED Structure
From Mike Ahrens, UNCC, Ni-Au Contact
Optimization, 2004
3
Cleaning Method
  • Double-polished sapphire wafer
  • Boil in chloroform 3 mins
  • Sonicate in chloroform 3 mins
  • Boil in acetone 3 mins
  • Sonicate in acetone 3 mins
  • Boil in methanol 3 mins
  • Dry with argon

4
E-Beam System
5
E-Beam Charges
6
Element Collection
7
E-Beam Melting Au
8
PLD System
9
Deposition
10
XRD Analysis
11
AFM Analysis
AFM Image
Roughness Graph
  • RMS Roughness 86-106

12
Optical Characterization
  • Spectroscopic Reflectometry Bifurcated
    Fiber Optic Automated Recorded Spectra

Data
Fit
13
Collection of Data Points
  • Reflectometer Apparatus

14
Reflection Spectra
5ÅNi/2ÅAu E-Beam Run
15
Annealing
  • Feedback lamp control system
  • Temperature time recipes
  • Dry runs
  • 500-700 Ar
  • Very loud

16
Spectral Results
17
Spectral Results
18
Annealing Temp Vs Transmission
Working Region
19
Grain Sizes Correlation to Heat
  • As depositedSmall grain size (10-20nm).Textured
    preferred orientation (111)//GaN surface
  • 500-600Densification (Regrowth)Melting.Large
    grains (500-600nm).
  • 700-750Island formation,discontinuous due to
    surface tension.Phases formed
  • gt800Total reaction.Conductive and transparent
    but low work function

light
GaAu, GaNi, Phases
20
Electrical Properties
  • TLM

From Kim, Je, Electrochemical Society, 147
From G.K. Reeves, Solid-State Electronics, 23,
487, (1980).
21
Conclusions
  • Best annealing temperatures are between 625 -
    690C
  • 5ÅNi/2ÅAu is more transparent than 5ÅNi/5ÅAu
  • PLD films as deposited are rougher and less
    uniform than e-beam
  • However, PLD shows promise for this application,
    especially in prototyping, and needs further
    research

22
Problems
  • Cleaning
  • PLD uniformity
  • Oxidation between runs
  • Dirty laser window
  • Laser gas
  • Heater, rotators breaking
  • Crashing cryo pumps

23
Acknowledgements
  • Ed Stokes, Ph. D.
  • Albert Davydov, Ph. D.
  • Mr. Michael T. Ahrens
  • Mrs. Jianhua Li
  • Mrs. Sandra Claggett
  • Daniel Josell, Ph. D.
  • And a special thanks to
  • Peter Schenck, Ph. D.

24
Questions
  • Ask a lot
  • Really

25
Title
  • text
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