Single Event Latchup (SEL) Definitions Latchup Basics Latchup Basics Equivalent Circuit EPI Layer, Latchup, and Ion Range SELTH Variability Distribution of Peak ...
Overview Moving Forward of Testing for Latchup in Deep Submicron Devices ... Background Latchup Injection Curve ... 3D Device for SEL Testing. Solution to ...
... state-of-the-art commercial CMOS or BiCMOS (digital and mixed signal) products ... examples include analog-to-digital convertors (ADCs) and high density ...
Single Event Latch Up Protection Of. Integrated Circuits. Small. Business ... Integrated single event latch up protection designed into a radiation hard ASIC ...
Prentice Hall 1995. Devices. Cross-Section of CMOS Technology. Digital Integrated Circuits ... Prentice Hall 1995. Devices. A model for manual analysis ...
Device Characteristics. Radiation Test Suite. Program Test Configuration. Test Procedure ... DEVICE CHARACTERISTICS. Characteristics: All Layer Copper SRAM Process ...
Need to extend Moore's Law. Commercial Availability of SOI wafers ... IBIS's commercial SIMOX wafers (3'' 6'') 1987. Novel SOI Devices. Dual gate SOI. ...
Note: HW#14 was updated this morning. (There are only 4 problems!) Lecture #42 OUTLINE IC technology MOSFET fabrication process CMOS latch-up Reading: Chapter 4
MAPLD99. Total Dose and SEE of Metal-To-Metal Antifuse ... DIN. S1. PSETB. D. Q. CLRB. CKP. CKS. Y. Combinatorial Cell. Register Cell. MAPLD99. M2M Antifuse ...
The component that was traced back as responsible for failure was a power MOSFET BZU357 ... A regenerative feedback occurs until second ... (one order of magnitude ...
VLSI Digital Systems Design Process Enhancements and Design Rules Metal Layer Enhancements Additional metal layers easier to route May require separation between via ...
ESD for the Fabless Semiconductor Company Golden Rules of ESD Due Diligence for Third Party Intellectual Property By Rosario Consiglio, Impulse Semiconductor 2006
... housing 2 ... (part/cm2/s) s (cm2) 3600 (s/h) nd. 100 Hz. Current simulation: 89 Hz ... for Flash, SRAM (LUT for HPTDC and event buffers) under development. ...
VLSI Digital System Design Input-Output Pads Input-Output Pad Design I-O pad design is highly specialized Requires circuit design experience Requires fabrication ...
... which changes the delay of the circuit Circuit delay changes with its history of ... SOI Applications The immunity to ... PowerPoint Presentation ...
Parts Requirements Preliminary Design Review Jorg Fischer University of California - Berkeley Overview Parts & Materials Overview Requirements Parts Quantities ...
All EEE parts must perform within specification following exposure to the ... SWRI electronics design meets TID and DDD performance requirements (SWRI doc #TBD) ...
Example of clamping circuit. Garg et al., 2006 [10] Protected node ... D2 turns on and clamps voltage. If particle causes protecting gate (GP) to turn on: ...
Space Weather Conditions at the Time of the Galaxy 15 Spacecraft Anomaly Report by the NOAA Tiger Team J.C Green1, W.F. Denig2, J.V. Rodriguez1,3, H.J. Singer1, T.M ...
Mechanical connection of chip to board. Removes heat produced on chip ... Inexpensive to manufacture and test. 20: Package, Power, and I/O. Slide 4. CMOS VLSI Design ...
Data Acquisition System for PHOBOS experiment at RHIC Silicon Front End Electronics and ... PHOBOS experiment at RHIC Pradeep Sarin for PHOBOS Collaboration
Title: Testing in the Fourth Dimension Author: pagrawal Last modified by: ress Created Date: 11/3/2000 2:09:08 AM Document presentation format: On-screen Show
Annular Transistor smallest possible CD/W ratio because. four Gates surround one Drain ! ... Elongated Annular transistor. not recommended for minimizing CD ! ...
Use a hardened SoS process along with special design techniques. Radiation effects ... such transistors laid out in this fashion make sure that no overlap will ever ...
Silicon Pad detectors for measuring charged particles (Multiplicity ... Used with different firmware for separate. applications. VME compliant, with dECL inputs ...
SAMPLE LAYOUT RULES (Appendix C) Simplified (not up to date) layout rules in ... makes vert. NPN, lat. PNP, and sub. PNP. 3. Layout Rule Syntax 'LAYER1 width N um' ...
Gate pulls minority carriers from substrate to thin layer (5nm) connecting ... of Gate/Drain creates field that pulls majority carriers into Drain. 2 - 9. EE ...
A Temperature Sensor in 0.18 m CMOS with 62 W Power Consumption and a Range of 120..120 C Jan-Rutger Schrader Anne Stellinga Kofi Makinwa Contents The Mars ...
Gerrit J. van Nieuwenhuizen. For the PHOBOS collaboration. Experience. Upgrade ... Steadman, George Stephans, Gerrit van Nieuwenhuizen, Carla Vale, Robin Verdier, ...
Operational through repair. Speed penalty due to feedback. Desirable for state based logic ... Similar collision problem. Clock delay lock loop module ...
reduce onboard storage, bandwidth requirement, contact time, quick-look ... (CCSDS compliant) in space since 95 on XTE NEAR COBRA TRMM CHANDRA TERRA EO1 ...
Face-to-Face IDT Meeting Session 3. Characterization of the South Atlantic ... Origin of the ... of spacecraft, instruments arcing, overcurrent damage to ...
Solid State Storage System for the International Space Station Jake Berlier David Jacob Dr. Jerry Tucker Dr. James M. McCollum Outline Introduction Orion Project ...
Trustworthiness of a computer system such that reliance can justifiably be ... Systems and Networks (DSN2001), G teborg (Su de), 1-4 juillet 2001, IEEE, pp. D-32-D-35. ...
Material from: Principles of CMOS VLSI Design. By Neil E. Weste and Kamran Eshraghian ... VDD / VSS Crossover. 9/9/09. Concepts in VLSI Des. Lec. 26. 9. Input / Output ...
Title: No Slide Title Author: Colinge Last modified by: Colin-Pierre Colinge Created Date: 8/9/2000 11:56:34 PM Document presentation format: A4 Paper (210x297 mm)
Moreover, the suitability of the fabrication technology for space flight first ... Fabrication using deep submicron CMOS results in higher performance due to ...