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Title: FERROELECTRIC CERAMICS: properties, processing and applications


1
FERROELECTRIC CERAMICSproperties, processing
and applications
  • Ignacio Martin-Fabiani, Dai Peng, Fang Yeyu and
    Sohaib Afzal
  • Tuesday, 17 October 2006

2
Introduction
  • A ferroelectric ceramic mixes the smartness of a
    ferroelectric material and the tailoring
    possibilities of ceramics.
  • Since both kind of materials exhibit many
    interesting properties, the mixture should be
    good

3
Ferroelectrics ferroelectric domains
  • Ferroelectric domains are generated by coupling
    between dipole moments of atoms.
  • When subjected to electric field, the domains
    pointing towards its direction start to grow over
    its neighbouring domains.

4
Ferroelectrics hysteresis loop
  • Saturation and remanent polarization
  • Coercive field
  • Possibility to reverse the polarization
  • Smart material it keeps information (remanent
    poalrization)

5
Ferroelectrics phase transition
  • Ferroelectricity is a phase transition (Curie
    point)
  • Ferroelectric phase has always lower symmetry
  • Example BaTiO3 (cubic changes into tetragonal)

6
Ferroelectrics summary
  • Present spontanous polarization
  • Polarization can be inversed
  • Ferroelectric domains
  • Hysteresis loop
  • Ferroelectricity is a phase transition
  • Piezoelectric and pyroelectric effect

7
Ceramics is a wide term
  • The term ceramics covers all inorganic
    non-metallic materials whose formation is due to
    the action of heat.
  • So you could think something like this

8
but we are dealing with ADVANCED ceramics!
We can control, modify and optimize its
properties by tailoring the material!
9
Properties of ceramics
  • Mechanical poor toughness (under study)
  • Electrical semiconductors, superconductors,
    piezoelectrics, pyroelectrics, ferroelectrics
    (BaTiO3, PZT)
  • High resistance to abrasion
  • Excellent hot strength
  • Chemical inertness
  • We can tailor properties for specific
    applications

10
Why are ferroelectric ceramics so important?
  • FERROELECTRICS
  • High permittivities
  • Spontaneus polarization
  • Electric conducticity can be controlled
  • Piezoelectric and pyroelectric effect
  • Optical anisotropy, electrooptic an
    photorefractive deffect
  • CERAMICS
  • Broad range of chemical composition
  • Control of grain size, porosity
  • Possibility of varying its shape and size.
  • High resistance to abrasion
  • Excellent hot strength
  • Chemical inertness

All this properties lead to a lot of potential
applications!
11
2.Processing of Ferroelectric ceramics
12
1. General Procedure of Processing
  • Raw
  • Materials
  • Mixing
  • Calcining
  • Character
  • -ization
  • Milling
  • Poling
  • Sintering
  • Binder
  • Burnout

13
1. raw materials
  • Weighing the raw materials according to the
    stoichiometric formula of the ferroelectric
    ceramic desired .

14
2. Mixing
  • Mixing the powders either mechanically or
    chemically
  • Mechanical mixing is usually done by either ball
    milling or attrition milling for a short time.
  • Chemical mixing on the other hand is more
    homogeneous as
  • it is done by precipitating the precursors
    in the same container.

15
3.Calcination
  • The solid phase reaction takes place between
    the constituents giving the ferroelectric phase
    during the calcination step

16
4. Milling
  • The lumps are ground by milling after
    calcining.

17
5. binder burnout
  • After shaping, the green bodies are heated
    very slowly to between 500-600 C in order to
    remove any binder present.

18
6.Sintering
  • After the binder burnout is over, the samples are
    taken to a higher temperature for sintering to
    take place.

19
7.Poling
  • it does not show any piezoelectricity when the
    ferroelectric ceramic is cooled after sintering .
    Piezoelectric behavior can be induced in a
    ferroelectric ceramic by a process called
    "poling" .
  • In this process a direct current (dc) electric
    field with a strength larger than the coercive
    field strength is applied to the ferroelectric
    ceramic at a high temperature, but below the
    Curie point.

20
8.Characterization
  • On the application of the external dc field
    the spontaneous polarization within each grain
    gets orientated towards the direction of the
    applied field. This leads to a net polarization
    in the poling direction

21
  • Two special important methods widely uses in the
    labs .
  • Metal Organic Decomposition (MOD)
  • (2)hot-pressed solid-state sintering method

22
1. MOD
  • MOD Metal Organic Decomposition

23
Desired thickness of the film is achieved
  • spin-coat the solution on a bulk Si wafer at
    4000 rpm, 20 seconds .
  • the film is baked on hot plate at 150 for 10
    minutes to remove the solvent .
  • then the film is given a pyrolysis heat
    treatment in a furnace at 470 ?for 30 minutes to
    remove the residual organics
  • and promote chemical reaction

24
Ferroelectric BST-thick film ceramic on
analumina substrate
25
2. hot-pressed solid-state sintering method
  • SEM micrograph of a cross section of PLZT
    transparent ferroelectric ceramics.

26
hot-pressed solid-state sintering method
  • PbO, La2O3, ZnO, Nb2O5, ZrO2, and TiO2 with
    purity of 99.499.8 and micrometer particle size
    were used as starting materials. The
    stoichiometric mixture was ballmilled in a
    plastic container with zirconia grinding media in
    alcohol solution, then dried and ground. The
    ground mixture powders were pressed under 80
    kg/pressure into a cylindrical bar of 60 mm in
    diameter and 60 mm in height.

27
hot-pressed solid-state sintering method
  • During a sintering process, an oxygen flow of 3
    L/min was passed through the oven. The sintering
    temperature was elevated to 950 C at a rate of
    200 C/h and kept for 1/2 h, then pressure was
    gradually applied to the sample until 480 kg/
    while the oven temperature was increased to 1200
    C at the same time.

28
hot-pressed solid-state sintering method
  • The temperature and pressure were kept for 6 h
    before the pressure was released. Subsequently,
    the temperature was continuously increased to
    1250 C in 1/2 h and kept for 10 h. After
    sintering, the oven was cooled down to 950 C at
    a rate of 140 C/h and then cooled naturally
    until room temperature. The sintered specimen was
    cut and polished to obtain the required size for
    different measurements.

29
Applications of Ferroelectric Ceramics ( general
overview )
30
background
  • Ferroelectric ceramics are used in a very broad
    range of functional ceramics and form the
    materials base for the majority of electronic
    applications. These electronic applicators
    account for more than 60 of the total high
    technology ceramics market worldwide

31
Capacitors
  • Basic principle
  • 'C' is the capacitance, is the permittivity of
    free space, is the relative dielectric
    permittivity, 't' is the distance between the
    electrodes, 'A' is the area of the electrodes.

32
multilayer ceramic (MLC)
  • The volumetric efficiency can be further enhanced
    .
  • consists of alternate layers of dielectric and
    electrode material.

33
Ferroelectric Memories
  • FRAM (Ferroelectric Random Access Memory) is a
    non-volatile memory combining both ROM and RAM
    advantages in addition to non-volatility
    features. It has higher speed in write mode,
    lower power consumption and higher endurance

34
Overview of FRAM
35
Advantages over EEPROM
  • Transaction Time
  • - 30,000 times faster than EEROM

36
Energy Consumption
  • 200 times lower power consumption compare to
    EEPROM
  • 1 FRAM Cycle is just Reading
  • 1 EEPROM Cycle consists of erasing , writing and
    reading

37
Endurance
  • 100,000 times higher endurance over EEPROM and
    the energy consumption is at 64Byte every write
    cycle

38
 Electro-optic Applications
  •  Ferroelectric Thin Film Waveguides. An optical
    waveguide controls the propagation of light in a
    transparent material (ferroelectric thin film)
    along a certain path
  •  Ferroelectric Thin Film Optical Memory Displays
    .

39
Other Ferroelectric Thin Film Applications
  • Pyroelectric Detectors Pyroelectric detectors
    are current sources with an output proportional
    to the rate of change of its temperature

40
Surface Acoustic Wave Substrates
  • An elastic wave generated at the input
    interdigital transducer (IDT) travels along the
    surface of the piezoelectric substrate and it is
    detected by the output interdigital transducer.
    These devices are mainly used for delay lines and
    filters in television and microwave communication
    applications

41
  • Most Common Commercial
  • Ferroelectric Ceramic

42
Lead Zirconate Titanate (PZT)
  • Chemical formula Pb Zrx Ti1-x O3
  • Perovskite ABO3
  • A and B are different in size
  • A cation is at centre
  • B cation is at the corner
  • O atom are at centre of unit cell faces.

43
Lead Zirconate Titanate (PZT)
  • generates a voltage when some mechanical stress
    is applied piezoelectric effect
  • useful for sensor and actuator application
  • Doping
  • Acceptor doping internal friction losses
    piezoelectric constant
  • Donor doping internal friction
    losses piezoelectric constant

44
Lead Zirconate Titanate (PZT)
  • Poling
  • High Temperature
  • High Voltage
  • Repeat to achieve high piezoelectric constant

45
PZT Thin Films
  • Used in number of devices
  • Thickness of 90nm
  • low crystallization temperature
  • good surface morphology
  • high remnant polarization

46
Application of PZT
  • Acoustic Device for underwater Application

47
Acoustic Device for underwater Application
  • Ultrasonic Sensors
  • Commercial sound waves generating devices use PZT
    thin films
  • Bulky ferroelectric ceramic sensors

48
Acoustic Device for underwater Application
  • Hence
  • Thin films are used
  • Low fabrication cost
  • Film deposition techniques
  • Electron beam evaporation 1
  • Rf diode sputtering 2
  • Ion beam deposition 3
  • RF planar magnetron sputtering
    4
  • MOCVD 5
  • ECR 6
  • laser ablation 7

and sol-gel 8
49
Fabrication
  • 0.25µm oxide layer
  • 0.3µm Pt. electrode
  • PZT thin film deposition for 2 hours at 350C
  • Annealing at 650C for 20 minutes
  • Cooled to room temperature

50
Fabrication
  • SEM patterns of deposited PZT thin film
  • PZT thin film annealed at 850C for 5 minutes

51
Fabrication
  • Lithography used to form a window in silicone
    substrate
  • Oxide layer is removed
  • 100µm diaphragm was created by etching
  • Successive layers of Pt, PZT and Pt deposited
  • poling under an electric field of 10kV per cm at
    a temperature of 130C

52
Results
  • Improved ferroelectric property
  • Improved accuracy
  • Economical sensor
  • Very small and light weight
  • Can be used for application underwater

53
Results
  • Senstivity

54
Applications
  • Ultra Sonic Cleaners
  • SODAR
  • SONAR
  • Medical Diagnostics
  • Printer Heads
  • Gas Lighters
  • Micro Positioners
  • Actuators
  • Annunciators
  • Sensors
  • Capacitors
  • FRAM
  • Ceramic resonators
  • Memory devices in thin film form

55
  • References of all material and
  • diagrams are given in report

56
Thankyou for your kind attention !!
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