???????wafer??

1
????????????????
2
?????????
???????wafer?? ????????? ????(B/G-MOLD)-????(MARK
-PLANT)-?? ???????????????????????IC??????,??????
??????????????????IC???
3
? ? ? ? ?
4
? ? ? ? (PACKAGE)
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? ? ? ?
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? ? ? ?
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? ? ? ?
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? ? ? ?
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? ? ? ?
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Assembly Main Process
SMT (Optional)
Detaping (Optional)
Grinding (Optional)
Taping (Optional)
Wafer Mount
UV Cure (Optional)
Die Cure (Optional)
Die Bond
Die Saw
Plasma
Wire Bond
Laser mark
Post Mold Cure
Molding
Laser Cut
Package Saw
Card Asy
Memory Test
Cleaner
Card Test
Packing for Outgoing
11
??????????-????
PROCESS VENDOR MODEL
SMT - PRINTER DEK HOR-2I
SMT CHIP MOUNT SIMENS HS-60
TAPING NITTO DR3000-III
INLINE GRINDER POLISH ACCRETECH PG300RM
STANDALONE GRINDER DISCO 8560
DETAPING NITTO MA3000
WAFER MOUNTER NITTO MA3000
DICING SAW DISCO DFD 6361
TSK A-WD-300T
12
??????????-????
PROCESS VENDOR MODEL
DIE BOND HITACHI DB700
ESEC ESEC2007/2008
ASM ASM889898
CURE OVEN C-SUN QDM-4S
WIRE BONDER KS KS MAXUM ULTRA
SKW UTC-2000
ASM Eagle60
PLASMA CLEAN MARCH AP1000
TEPLA TEPLA400
Mold TOWA YPS-SERIES
ASA OMEGA 3.8
13
??????

1. SOP-Standard Operation Procedure ??????
2. WI Working Instruction ?????
3. PM Preventive Maintenance ?????
4. FMEA- Failure Mode Effect Analysis ????????
5. SPC- Statistical Process Control ??????
6. DOE- Design Of Experiment ??????
7. IQC/OQC-Incoming/Outing Quality Control ??/??????
8. MTBA/MTBF-Mean Time between assist/Failure
   ?????????
9. CPK-????
10. UPH-Units Per Hour ?????
11. QC 7 Tools ( Quality Control ????? )
12. OCAP ( Out of Control Action Plan ?????? )
13. 8D ( ???????? )
14. ECN Engineering Change Notice ( ?????? )
15. ISO9001, 14001 ??????

14
SanDisk Assembly Process Flow
SanDisk ??????
Mold ??
Wafer IQC ????
Die Prepare ?????
SMT ????
PMC ?????
?? EOL
?? FOL
Laser Mark ????
Die Attach ????
Laser Cutting ????
Plasma Clean ??
Saw Singulation ????
Wire Bond ????
EVI ????
Plasma Clean ??
15

• SMT(????)
• ---??????(Solder paste printing),??(Chip
  shooting),???(Reflow),DI???(DI water
  cleaning),??????(Automatic optical
  inspection),??????????substrate?

16

• Die Prepare(?????) To Grind the wafer to target
  thickness then separate to single chip
• ---??????(Wafer Incoming), ??(Wafer Tape),??(Back
  Grind),??(Detape),??(Wafer Mount),??(Wafer
  Saw)?????,?????????????,?????,???????(DVI)????????
  ???,????????????.

Wafer tape
Wafer Saw
Back Grind
Wafer Detape
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Inline Grinding Polish -- Accretech PG300RM
Transfer
Key Technology 1. Low Thickness Variation /_
1.5 Micron 2. Good Roughness /- 0.2 Micron 3.
Thin Wafer Capacity Up to 50 Micron 4.
All-In-One solution , Zero Handle Risk
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2.Grinding ???? A TAPE?? B Grinding ?? C WAFER
CASSETTLE
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???TAPE?????

• 1?MOUNT
• No delamination STRONG
• 2?SAW ADHESION
• No die flying off
• No die crack

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????????

• 3?EXPANDING
• TAPE
• Die distance ELONGATION
• Uniformity
• 4?PICKING UP
• WEAK
• ADHESION
• No contamination

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3.Grinding ???? A Wafer Thickness Measurement
????? ?????????????????? B Wafer roughness
Measurement ?????? ???????????????
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4.Grinding ???? A Taping ??? B Detaping ??? C
Wafer Mounter ???
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Wafer Taping -- Nitto DR300II
Taping
Cut Tape
Alignment
Transfer Back
Key Technology 1. High Transfer Accuracy /_
2 Micron 2. High Cut Accuracy /- 0.2 mm 3.
High Throughput 50 pcs wafer / Hour 4. Zero
Void and Zero Wafer Broken
Transfer
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Detaping
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l  Wafer mount
Wafer frame
 
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? ? ? ? (Dicing)
Dicing ?? A DISCO 6361 ?? B ACCERTECH
????AW-300T
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Main Sections Introduction

• Cutting Area Spindles (Blade, Flange, Carbon
  Brush), Cutting Table, Axes (X, Y1, Y2, Z1, Z2,
  Theta), OPC
• Loader Units Spinner, Elevator, Cassette,
  Rotation Arm

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Blade Close-View
Cooling Water Nozzle
Blade
Cutting Water Nozzle
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Die Sawing Disco 6361
Rear
Key Technology
1. Twin-Spindle Structure. 2. X-axis speed up to
600 mm/s. 3. Spindle Rotary Speed Up to
45000 RPM. 4. Cutting Speed Up to 80mm/s. 5.
Z-axis repeatability 1um. 6. Positioning
Accuracy 3um .
Front
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A Few Concepts

• BBD (Blade Broken Detector)
• Cutter-set Contact and Optical
• Precision Inspection
• Up-Cut and Down-Cut
• Cut-in and Cut-remain

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? ? ? ? (Dicing)
Dicing ???? A Die Chipping ???? B Die Corrosive
???? C Die Flying ????
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Wmax , Wmin , Lmax , DDY ,DY
?? DYlt 0.008mm Wmax lt 0.070mm Wmin lt 0.8?? Lmax
lt 0.035
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        ????????? a.       ??
??????????? b.      ?? ???Wafer????.
???? S1230 3000045000 RPM S1440
3000045000 RPM 27HEED 3500045000 RPM 27HCCD
3500045000 RPM 27HDDC 3500045000 RPM
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? ? ? ? (Dicing)
3.Dicing ???? A Tape B Saw BLADE ??? C DI
?????RO ??
35
?????? ????? ???????????????? ????Nickel bond
hardness ??????
P4
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Saw blade ?????? ? Proper Cut Depth Into Tape
(????????? )
?? ?????????? 1. ?????? 2. ?????DDY
??????? ????? (Tape) 1/3 ???
P11
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?????? ? Diamond Grit Size (??????)
?? ?????? 1. ??????? 2. ????????? 3.
??????? ?????? 1. ??????? 2. ???????? 3. ???????
P15
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TAPE ???SAW????? ? Mounting Tape (???? )
?? ????????? 1. ??? Die? 2. ???????? ???? Die
Attach process pick up die ???
P10
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? ? ? ? (Dicing)
4.Dicing ???? A CO2 Bubbler ??????? B DI Water
?????? C Diamonflow ??? D UV ???
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Die Attach(????) To attach single die to SMTed
substrate ---?????????????(SMT)????(Pre-bake)?????
,?????????,??????????(Die Attach Cure)?????.
Passive chip (capacitor)
Substrate
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?? (Die Bond)
Die Bond ?? A HITACHI DB700 B ESEC2007/2008 ?? C
ASM 829/889/898 ??
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Die Attach Hitachi DB700
Key Technology
1. Bonding speed 30ms/die 2. Bonding Accuracy
X/Y 25 um 3. Angle Accuracy 0.5 degree 4.
Thin Die Pick Up Solution Up to 2 mils
(Electromagnetic Multi-Step Mode) 5.
Integrate Inline Module X Memory 1
controller 6. Multi-Die stack Die Capacity Up
to 8 layers once
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?? (Die Bond)
2.Die Bond ????
X, Y PLACEMENT BLTTILTROTATION THETA CPK
DIE ROTATION THETA
PLACEMENT ACCURACY X, Y (CPK)
BONDLINE THICKNESS (CPK)
VOID
DIE SHARE
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?? (Die Bond)
3.Die Bond ???? A Substrate / Lead frame B Die
Attach Film C Wafer after Saw D Magazine ??
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Substrate

• Basic Structure

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Substrate Basic Information

• Core ??????,0.1-0.4mm
• ??? 25um/-5um
• ??? 5.0-12.5um
• ??? 0.50-1.10um
• Solder Mask25um/-5um
• ??? 0.10-0.56mm

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BGA??????
4 layer
????(??)
AOI??????
??
????
2 layer
???
??
Deburr
??
??
????
??
AOI??????
(option)
?Ni/Au
??
O/S??
??
??
??
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?? (Die Bond)
4.Die Bond ???? A ????? ?????????????????????
MIXING/DEFORMING REVOLUTION SPEED
?????????????????
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B Curing Oven ????? ?????? N2 ????? profile
???? ????Magazine ??
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C Wafer mapping ??
51

• Wire Bond(????) Die to Package Interconnects
• How a die is connected to the package or board.
• ---????????????????????,??????????????????????????
  ?(Pre-Bond Plasma Clean)???????,??????????????(IVI
  ),??????????,??????????????.

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Wire Bond KS Ultra
Gold Wire
Key Technology
1. Die pad opening(Min.) 45um. 2. Die pads pitch
(Min.) 60 µm . 3. Substrate Lead width Pitch
(Min.) 40 µm 25 µm. 4. Multi-Loop
Selection cover all Package. 5. Stack die
reverse Bonding to Decrease Total package
Thickness.
Capillary
Bond Force
Ultrasonic Power
Die Pad
Heater
Substrate Lead
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??(Wire Bond)

• 1.Wire Bond ????
• Pad Open Bond Pad Pitch
• Ball Size
• Ball Thickness
• Loop height
• Wire Pull
• Ball short
• Crater Test

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??(Wire Bond)
2.Wire Bond ????

• Substrate with die
• Capillary
• Gold Wire

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Capillary
How To Design Your Capillary

• TIP .. Pad Pitch
• Pad pitch x 1.3 TIP
• Hole ... .Wire Diameter
• Wire diameter 0.30.5 H
• CDPad size/open/1st Ball
• CD 0.4 0.6 1st Bond Ball size
• FA OR.Pad pitch(um) FA
• gt100 0,4
• 90/100 4,8,11
• lt90 11,15
• IC type loop type

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Gold Wire

• Gold Wire Manufacturer
• (Nippon , SUMTOMO , TANAKA. )
• Gold Wire Data
• ( Wire Diameter , Type , EL , TS)

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??(Wire Bond)
3.Wire Bond ???? A Microscope ???loop height B
Wire Pull ???(DAGE4000) C Ball Shear ????? D
Plasma ??/??????
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Ball Size Ball Thickness

• ?? um,Mil
• ???? 50X
• Ball Thickness ????
• 60 um BPP ? 1/2 WD50
• 60 um BPP ? 1/2 WD4050

Ball Size
Ball Thickness
Ball Size
59
Loop Height

• ?? um,Mil
• ???? 20X

Loop Height
??
60
Wire Pull

• 1 Lifted Bond (Rejected)
• 2 Break at neck (Refer wire-pull spec)
• 3 Break at wire ( Refer wire-pull spec)
• 4 Break at stitch (Refer stitch-pull spec)
• 5 Lifted weld (Rejected)

61
Ball Shear

• ?? gram or g/mil²
• Ball Shear ????
• Intermetallic(IMC?75???,Shear
  Strength???gt6.0g/mil²?
• SHEAR STRENGTHBall Shear/Area (g/mil²)
• Ball Shear x Ball Size y Area
  p(y/2) ²
• x/p(y/2) ² z g/mil²

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?????Plasma Process

• ??---????????
• Gas Phase - Solid Phase Interaction
• Physical and Chemical
• ????????
• Molecular Level Removal of Contaminants
• 30 to 300 Angstroms
• ???????? Contaminants Removed
• ???????? Difficult Contaminants
• Finger Prints
• Flux
• Gross Contaminants

• Organic Residue
• Photoresist
• Metal Salts (Nickel Hydroxide)

• Oxides
• Epoxy
• Solder Mask

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Plasma Clean March AP1000
Well Cleaned with Plasma
Electrode
Ar
Ar
Chip
Ar





? lt 8 o




Key Technology
Die


1. Argon Condition, No oxidation. 2. Vacuum Pump
dust collector. 3. Clean Level blob Test Angle
lt 8 Degree.
PCB Substrate

Plasma
64
Organic Contamination vs Contact Angle
No Clean (Organic Contamination)
Well Cleaned with Plasma
Water Drop
?
Chip
Chip
? gt 80 o
? lt 8 o
65

• Mold(??)
• To mold strip with plastic compound then protect
  the chip to prevent from damaged
• --???????,???????????,???????????,????.???????????
  ?(Pre-Mold Plasma Clean),???????.????????????(Post
  Mold Cure),??????.

66
?? (Molding)

• Molding??
• A TOWA YPS Y-Series
• B ASA OMEGA 3.8

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????????
????????? 1?????????????
2????????????????????,?????????
3??????????????????,?????,???????
68
????????
CULL BOX ????????? OUT MG ???????L/F ?????
??????????PLC,???????SERVO PACK?
69
?? (Molding)
2. Molding???? A Compound ??? B Mold Chase ????
70
????
????????????????????????????????,?????????????????
???cull??????????????
71
?? (Molding)
3. Molding???? A X-RAY X ????? ---??Mold
???????? B Plasma ??? -- ?????WB ????
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The End
Thanks