MOSFET%20IV%20CHARACTERISTICS

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MOSFET IV CHARACTERISTICS
Lot Number F050118 Wafer Number D4 Date
11-13-2006 Process SMFL CMOS Product DAC03

NMOS L/W 4/16
NMOS Id-Vds Family of Curves NMOS Id-Vgs NMOS Subthreshold Characteristics NMOS Field VT
NFAM NVT NSUB NFIELD
PMOS L/W 4/16
PMOS Id-Vds Family of Curves PMOS Id-Vgs PMOS Subthreshold Characteristics PMOS Field VT
PFAM PVT PSUB PFIELD
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MOSFET EXTRACTED PARAMETERS
Lot Number F050118 Wafer Number D4, Die
Location R , C
PMOS NMOS Units
Mask Length / Width 4/16 4/16 µm
VT -1.48 1.34 V
Lambda (for Vgs Vdd) 0.02833 0.0262 V-1
Max gm / mm of channel width 8.75 25.0 mS/mm
Idrive 20 50 µA/µm
Ion/Ioff _at_ Vd 0.1V 6 6 Decades
Ion/Ioff _at_ Vd 5V 7 7 Decades
Ioff _at_ Vd 0.1V 1E-11 5E-10 A/µm
Ioff _at_ Vd 5V 1E-11 5E-10 A/µm
Sub-Vt Slope _at_ Vd 0.1V 100 100 mV/Dec
Sub-Vt Slope _at_ Vd 5 V 100 100 mV/Dec
DIBL_at_1nA/µm ?Vg/?Vd 0 0 mV/V
Field VT -23 23 V
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MOSFET IV CHARACTERISTICS
Lot Number F050118 Wafer Number D4 Date
11-17-2006 Process SMFL CMOS Product DAC03

NMOS L/W 2/16
NMOS Id-Vds Family of Curves NMOS Id-Vgs NMOS Subthreshold Characteristics NMOS Field VT
NFAM NVT NSUB NFIELD
PMOS L/W 2/16
PMOS Id-Vds Family of Curves PMOS Id-Vgs PMOS Subthreshold Characteristics PMOS Field VT
PFAM PVT PSUB PFIELD
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MOSFET EXTRACTED PARAMETERS
Lot Number F050118 Wafer Number D4, Die
Location R , C
PMOS NMOS Units
Mask Length / Width 2/16 2/16 µm
VT -1.51 1.36 V
Lambda (for Vgs Vdd) 0.115 0.0417 V-1
Max gm / mm of channel width 21.3 31.3 mS/mm
Idrive 54.4 93.8 µA/µm
Ion/Ioff _at_ Vd 0.1V 6 5 Decades
Ion/Ioff _at_ Vd 5V 7 6 Decades
Ioff _at_ Vd 0.1V 5.9e-11 5.0e-10 A/µm
Ioff _at_ Vd 5V 5.9e-11 5.0e-10 A/µm
Sub-Vt Slope _at_ Vd 0.1V 90 190 mV/Dec
Sub-Vt Slope _at_ Vd 5 V 90 190 mV/Dec
DIBL_at_1nA/µm ?Vg/?Vd 0 0 mV/V
Field VT -23 23 V
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INVERTERS, VAN DER PAUW AND CBKR
Lot Number F050118 Wafer Number D4 , Die
Location R , C
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EXTRACTED PARAMETERS FROM INVERTERS, VAN DER
PAUW AND CBKR
Lot Number F050118 Wafer Number D4 , Die
Location R , C
Contact Gs CBKR
P 42 mmho/µm2
N 8 mmho/µm2
poly 37 mmho/µm2
Inverter
VinL 2.4 V
VinH 3 V
VoL 0.4 V
VoH 4.5 V
Vinv 2.6 V
Imax 4.5 mA
Gain -21.5
D0ViL-VoL 2.0 V
D1VoH-ViH 1.5 V
Ring Oscillator Vdd5V
Stages 73
Period 104 nsec
td 0.712 nsec
OpAmp
Gain None
Offset None mVolts
GBW None Hz
Rhos Van der Pauw
P 115 Ohms
N 5.8 Ohms
well 614 Ohms
Poly 20.0 Ohms
Al 0.0662 Ohms
VIA CHAIN
M1-P None ohms
M1-M2 None ohms
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73 Stage Ring at 6V, td 0.228ns
73 Stage Ring at 5V, td 0.712ns
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nMOSFET VT WAFER MAP
Lot Number F050118 Wafer Number ??















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MOSFET IV CHARACTERISTICS
Lot Number F050408 Wafer Number D1 Date
10-23-2006 Process Sub-CMOS Product Mixed

NMOS L/W 2/16
NMOS Id-Vds Family of Curves NMOS Id-Vgs NMOS Subthreshold Characteristics NMOS Field VT
NFAM NVT NSUB NFIELD
PMOS L/W 2/16
PMOS Id-Vds Family of Curves PMOS Id-Vgs PMOS Subthreshold Characteristics PMOS Field VT None
PFAM PVT PSUB PFIELD
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MOSFET EXTRACTED PARAMETERS
Lot Number F050408, Wafer Number D1, Die
Location R , C
PMOS NMOS Units
Mask Length / Width 2/16 2/16 µm
VT -0.931 0.507 V
Lambda (for Vgs Vdd) 0.239 .0308 V-1
Max gm / mm of channel width 50 75 mS/mm
Idrive 213 320 µA/µm
Ion/Ioff _at_ Vd 0.1V 11 10 Decades
Ion/Ioff _at_ Vd 5V 9 10 Decades
Ioff _at_ Vd 0.1V 1E-13 1E-13 A/µm
Ioff _at_ Vd 5V 1E-11 1E-13 A/µm
Sub-Vt Slope _at_ Vd 0.1V 80 100 mV/Dec
Sub-Vt Slope _at_ Vd 5 V 80 100 mV/Dec
DIBL_at_1nA/µm ?Vg/?Vd 40 0 mV/V
Field VT none 22 V
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INVERTERS, VAN DER PAUW AND CBKR
Lot Number F050408, Wafer Number D1, Die
Location R , C
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EXTRACTED PARAMETERS FROM INVERTERS, VAN DER
PAUW AND CBKR
Lot Number F050408, Wafer Number D1, Die
Location R , C
Contact Gs CBKR
P 0.297 mmho/µm2
N 2.14 mmho/µm2
poly 7.58 mmho/µm2
Inverter
VinL 1.6 V
VinH 2.3 V
VoL .386 V
VoH 4.59 V
Vinv 2.0 V
Imax 0.101 mA
Gain 51
D0ViL-VoL 1.21 V
D1VoH-ViH 2.29 V
Ring Oscillator Vdd5V
Stages 17
Period 90 nsec
td 2.6 nsec
OpAmp
Gain gt5000
Offset -1.17 mVolts
GBW Hz
Rhos Van der Pauw
P 39.6 Ohms
N 39.3 Ohms
well 1182 Ohms
Poly 114 Ohms
Al 0.0583 Ohms
VIA CHAIN
M1-P ohms
M1-M2 ohms
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F050408 D1 Center 2/16
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EXTRACTED PARAMETERS FROM Operational Amplifier
Lot Number F050408, Wafer Number D1, Die
Location R , C
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EXTRACTED PARAMETERS FROM Ring Oscillator
Lot Number F050408, Wafer Number D1, Die
Location R , C
gate delay td 90ns/2/17 2.6ns
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nMOSFET VT WAFER MAP
Lot Number F , Wafer Number D















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MOSFET IV CHARACTERISTICS
Lot Number Wafer Number Date
11-13-2006 Process Product
NMOS L/W
NMOS Id-Vds Family of Curves NMOS Id-Vgs NMOS Subthreshold Characteristics NMOS Field VT
NFAM NVT NSUB NFIELD
PMOS L/W
PMOS Id-Vds Family of Curves PMOS Id-Vgs PMOS Subthreshold Characteristics PMOS Field VT
PFAM PVT PSUB PFIELD
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MOSFET EXTRACTED PARAMETERS
Lot Number F , Wafer Number D ,
Die Location R , C
PMOS NMOS Units
Mask Length / Width µm
VT V
Lambda (for Vgs Vdd) V-1
Max gm / mm of channel width mS/mm
Idrive µA/µm
Ion/Ioff _at_ Vd 0.1V Decades
Ion/Ioff _at_ Vd 5V Decades
Ioff _at_ Vd 0.1V A/µm
Ioff _at_ Vd 5V A/µm
Sub-Vt Slope _at_ Vd 0.1V mV/Dec
Sub-Vt Slope _at_ Vd 5 V mV/Dec
DIBL_at_1nA/µm ?Vg/?Vd mV/V
Field VT V
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INVERTERS, VAN DER PAUW AND CBKR
Lot Number F , Wafer Number D ,
Die Location R , C
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EXTRACTED PARAMETERS FROM INVERTERS, VAN DER
PAUW AND CBKR
Lot Number F , Wafer Number D ,
Die Location R , C
Contact Gs CBKR
P mmho/µm2
N mmho/µm2
poly mmho/µm2
Inverter
VinL V
VinH V
VoL V
VoH V
Vinv V
Imax mA
Gain
D0ViL-VoL V
D1VoH-ViH V
Ring Oscillator Vdd5V
Stages
Period nsec
td nsec
OpAmp
Gain
Offset mVolts
GBW Hz
Rhos Van der Pauw
P Ohms
N Ohms
well Ohms
Poly Ohms
Al Ohms
VIA CHAIN
M1-P ohms
M1-M2 ohms
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nMOSFET VT WAFER MAP
Lot Number F , Wafer Number D