SIMULATION%20OF%20THE%20GROWTH%20OF%20A%20HETEROEPITAXIAL%20FILM%20ON%20A%20(111)%20ORIENTED%20SUBSTRATE

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SIMULATION OF THE GROWTH OF A HETEROEPITAXIAL
FILM ON A (111) ORIENTED SUBSTRATE
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SYSTEM AND BOUNDARY CONDITIONS
Boundary Condition Imposing Symmetry
Compressive region
Region where thermal strains are imposed to
simulate an epitaxial film with a lattice mismatch
b 3.84 Å
Tensile region
U1 0
111
110
U2 0
Film ?Ge0.5Si0.5 Material properties? Isotropic E
150.62 GPa ? 0.2098 Lattice parameter, a0
5.54 Å Slip system ? lt110gt111

• Substrate ? Si
• Material properties? Isotropic
• E 165.86 GPa
• ? 0.2174
• Lattice parameter, a0 5.43 Å Slip system ?
  lt110gt111

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s XX CONTOURS OF HETEROEPITAXIAL FILM ON
SUBSTRATE
Film thickness
Compressive stresses
Film
Tensile Stresses
Interfacial plane (111)
Substrate
1.3 1.2 0.6 0.0 ?0.6 ?1.2 ?1.8 ?2.4 ?2.7
70b 268.8 Å
Edge of the domain
Stress contour values in GPa
100b 384 Å
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Substrate energy goes upto 30 of total energy on
growth film to 10b thickness