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Investigation of the potential of organic circuits for RFID tags

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Investigation of the potential of organic circuits for RFID tags Qintao Zhang and Sha Li Organic transistors Organic tags are the only way of under-1-cent RFID tags ... – PowerPoint PPT presentation

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Title: Investigation of the potential of organic circuits for RFID tags


1
Investigation of the potential of organic
circuits for RFID tags
  • Qintao Zhang and Sha Li

2
Matthias Handy
RFID-Workshop, 30.9./1.10.04, Berlin
3
Organic transistors
Cgd0
Cgs0
  • Organic tags are the only way of under-1-cent
    RFID tags

4
Good and Bad things
Good things
  • Flexible fabrication soluble materials can be
    printed on all kinds of material
  • Transparent, important for display, may get
    e-paper, e-poster

Bad things
  • No standard structures, L5mm10nm, Wseveral
    100um10mm, large overlap capacitance
  • No standard semiconductor materials, Pentacene,
    P3HT, CuPc
  • No Standard gate dielectric, K2 to 16
  • No control of parameters, lots of different Vt
    reported
  • fabrication limitation Cant shrink devices,
    typical number L2µm, W50µm for inkjet printing

5
AIM-spice Model
  • Good enough

Mobility 3cm2/VS Supply voltage 40V
Channel Length 2µm Contact resistance 7E5 ohm
Channel width 50µm
6
Inverter


CMOS Inverter
Organic Inverter
  • Complementary Static inverter

7
Inverter
Pseudo-PMOS
Depletion Load PMOS
8
Ring Oscillator
Wp/Wn1/1, Vdd40V, Freq394.42KHz,P490uW
Wp/Wn1/15, Vdd40V, Freq70.741KHz, P81uW
  • Using Complementary inverter

Wp/Wn1/1, Vdd14.3V, Freq125.36KHz, P15.7uW
9
Ring Oscillator
Depletion Load PMOS
Pseudo-PMOS
COMPLEMENTARY(15/1) PSEUDO DEPLETION
Tp (us) 14.136/2.535 10.8 74.4
Frequency (KHz) 70.741/394.42 92.593 13.44
Power (uW) 81.027/490.37 833.59 12.456
10
NAND and NOR
Complementary NAND
Complementary NOR
11
NAND and NOR
COMPLEMENTARY NAND COMPLEMENTARY NOR RATIO NAND DCVSL
Thl (us) 2.63/0.315 0.575/0.217 0.056 0.73
Tlh(us) 2.01/0.0899 1.61/0.191 0.025 0.026
Frequency (KHz) 380/3174.6 621.2/4608 17857 1370
Power (uW) 195/1.83 55.5/9.22 332 20.7
DCVSL
12
Memory
NOR ROM
OR ROM NOR ROM
Tp (ns) 58.2 231
Frequency (MHz) 17.18 4.33
Power (uW) 250 256
OR ROM
  • Mainly use P-type transistor in the ROM to
    improve the performance.

13
Decoder
Decoder Wmin
Decoder Wp/Wn2/15
OR ROM DECODER DECODERROM
Tp (us) 0.0582 2.03 2.33
Frequency (KHz) 0.017 492.6 429.2
Power (uW) 250 31.8 407
Decoder OR ROM
14
Conclusion
  • Using current organic transistor technology, it
    is possible to run the RFID at 125KHz.
  • Due to the big size of the device, the power
    consumption is much bigger than the regular CMOS
    circuit. This severely reduces the working
    distance of the organic RFID.
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