Overview

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Overview

• VICENTE MUÑOZ SANJOSÉ

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Research fields

• Electromagnetic field diffusion in ferromagnetic
  materials (1980-1984)
• Characterizacion of high Tc superconductors
• (1987-1989)
• Crystal growth and characterization of
  materials (1987-

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Electromagnetic field diffusion in ferromagnetic
materials
UNIVERSITAT DE VALÈNCIA
Electromagnetic field diffusion in a
ferromagnetic half space analytical solution
Electromagnetic field diffusion numerical
solution
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Electromagnetic field diffusion in ferromagnetic
materials

• Design and installation of a system for the
  measurement of hysteresis loops
• Static and dynamic behaviour
• Study and modellitation of hysteresis loops
• Study of the diffusion equation
• Analytical aproach
• Numerical aproach
• Experimental and theoretical study of power
  losses in ferromagnetic materials

Advisory Prof. V. Such
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Synthesis and characterization of high Tc
superconductors
Preparación y caracterización de capas delgadas
de óxidos mixtos superconductores de los
sistemas Bi-Sr-Ca-Cu-O y Tl-Ba-Ca-Cu-O mediante
técnicas de evaporación en vacío Programa Midas
Objectives
Advisory Prof. A. Segura

• Synthesis of BiSrCaCuO and Tl-Ba-Ca-Cu-O
  compounds
• Study of the resistivity as a function of
  temperature
• Determination of critic temperature and current

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Crystal growth and characterization
of semiconductors
Crystal growth laboratory
Bulk crystals
Sample preparation
Epitaxial layers
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Crystal growth and characterization of
semiconductors
III-VI Materials
II-VI Materials
Other Materials
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Crystal growth and characterization of
semiconductors
UNIVERSITAT DE VALÈNCIA
III-VI SEMICONDUCTORS
Objectives

• Crystal growth of III-VI materials
• Study of physical properties
• Physical properties under high presure

Advisory Prof. A. Segura Collaborations Teams
of Prof R. Pareja Prof. A. Chevy
Actividad investigadora
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Crystal growth and characterization of
Semiconductors (III-VI)
UNIVERSITAT DE VALÈNCIA
Crecimiento, caracterización y aplicaciones de
nuevos materiales semiconductores CICYT
PA86-294
Crecimiento, caracterización y aplicaciones de
semiconductores para la óptica no lineal CICYT
MAT90-0242
Estudio de propiedades estructurales, ópticas,
magnéticas y de transporte de semiconductores
bajo altas presiones
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Crystal growth and characterization of
Semiconductors (III-VI)
InSe
GaS
III-VI Materials
Dopado
InxGa1-xSe
GaTe
GaSe
Actividad investigadora
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II-VI Materials
Actividad investigadora
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Crystal growth and characterization of
Semiconductors
II-VI SEMICONDUCTORS
Objectives

• Crystal growth (bulk and layers)
• Alternative methods to the crystal growth and
  study of optimal conditions
• Hidrodynamical study of growth processes
• Study of defects and correlation with growth
  conditions
• Luminescence and cathodoluminescence of II-VI
  materials.
• Potential aplications

Advisory V. Muñoz-Sanjose Collaborations Teams
of Prof. J.A. García Prof. J. Piqueras Prof A.
Segura
Actividad investigadora
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Crystal growth and characterizartion of
Semiconductors (III-VI)
Crecimiento cristalino y caracterización de
cristales semiconductores II-VI, aleaciones y
materiales semimagnéticos IIVI-MnVI (GV-2005/94)
Crecimiento cristalino caracterización y
aplicaciones de compuestos II-VI y aleaciones
(MAT98-0975-C02-01)
Crecimiento de capas epitaxiales de
semiconductores II-VI y aleaciones a partir de
la pirólisis de compuestos organometálicos
MOCVD. Aplicaciones a la fotodetección
(1FD97-0086)
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Crystal growth and characterizartion of
Semiconductors (III-VI)
Crecimiento cristalino, caracterización y
aplicaciones de capas epitaxiales de
semiconductores II-VI (GV01-536)
Crecimiento cristalino y caracterización del
óxido de zinc M .E.C.( MAT 2001-2920-C03-01)
Semiconductor oxides for UV optoelectronics,
surface acoustics and spintronics CE (Thematic
Network) (G5RT-CT-2002-05075)
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Crystal growth and characterizartion of
Semiconductors (III-VI)
Materiales para la optoelectrónica el óxido de
cinc, crecimiento cristalino y
caracterización. Acción integrada
hispano-francesa (Picasso) HF2001-0066
Crecimiento cristalino, caracterización y
aplicaciones de semiconductores
II-VI Generalitat Valenciana CTGCA/2002/3-7
Crecimiento cristalino, caracterización y
aplicaciones de capas epitaxiales Generalitat
Valenciana Acciones Especiales 2003
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Crystal growth and characterization of
Semiconductors
HgTe
CdTe
HgxCd1-xTe
II-VI Materials
HgxZn1-xTe
CdxZn1-xTe
ZnSe
ZnTe
ZnTexSe1-x
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Crystal growth and characterization of
Semiconductors
Other materials
Objectives
Advisory V. Muñoz-Sanjosé Collaborations Teams
of Prof A. Segura Prof. J.A. García Dr. I.
Terry Dr. R. Triboulet

• Crystal growth of semimagnetic materials
• Crystal growth of materials with punctual
  interest
• New approachs to the growth techniques
• Collaborations

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Crystal growth and characterization of
Semiconductors (semimagnetic and other materials)
Crecimiento cristalino y caracterización de
cristales semiconductores II-VI, aleaciones y
materiales semimagnéticos IIVI-MnVI (GV-2005/94)
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Crystal growth and characterization of
Semiconductors (semimagnetic and other materials)
HgxMn1-xTe
CdxMn1-xTe
MnTe
Crystal growth of other materials
PbTe
Zn3P2
ZnxCo1-xSe
Actividad investigadora
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• Experimental facilities

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• Crystal growth laboratory. Bulk materials
• Crystal growth laboratory Epitaxial layers
• Other equipments

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Crystal growth laboratory. Bulk materials

• Synthesis of materials
• Bridgman method. Horizontal and vertical
  configurations
• Vapor phase transport
• PVT
• CVT
• Piper - Polish
• Solution methods Traveling Heater Method (THM)
  y
• Cold Traveling Heater Method (CTHM)
• Solid phase recrystallization (SPR)

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Current Projects

• Crystal growth, characterization and aplications
  of II-VI epitaxial layers
• Crystal growth and characterization of ZnO and
  based materials
• Semiconductor oxides for UV optoelectronics,
  surface acoustics and spintronics