The AUIRS2016S is a high-voltage power MOSFET high-side driver featuring an internal Vs-to-GND recharge NMOS. The device

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PRESS RELEASE
AUIRS2016S HIGH SIDE DRIVER WITH INTERNAL VS
RECHARGE
DATA SHEET
The AUIRS2016S is a high-voltage power MOSFET
high-side driver featuring an internal Vs-to-GND
recharge NMOS. The devices output driver
features a 250mA high pulse current buffer stage.
The channel can be used to drive an N-channel
power MOSFET in the high-side configuration,
operating up to 150V above ground. The new IC
uses a proprietary latch immune CMOS technology
featuring exceptional negative Vs immunity to
deliver the ruggedness and reliability essential
for harsh environments and automotive
under-the-hood applications.
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• Features
• One high side output and internal low-side Vs
  recharge
• CMOS Schmitt trigger inverted input with pull up
  resistor
• CMOS Schmitt trigger inverted reset with pull
  down resistor
• 5V compatible logic level inputs
• Immune to Vs spike and tolerant to dVs/dt

• Advantages
• Proprietary HVIC technology enables ruggedized
  monolithic construction and an industry
  benchmarking negative voltage spike immunity for
  fail proof operation even under extreme switching
  conditions and short circuit events.
• The IC is qualified according to AEC-Q100
  standards and features an environmentally
  friendly, lead-free and RoHS compliant bill of
  material and are part of International
  Rectifiers Zero-Defect initiative.
• The AUIRS2016S is set up to be in line with
  typical change management requirements of the
  automotive market.