Crystal Growth of III/V Semiconductor Nanowires - PowerPoint PPT Presentation

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Crystal Growth of III/V Semiconductor Nanowires

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We can also find Band gap engineering: ... When the low band gap segment is thin enough it is possible to produce a portion in this nanowire where exitons are ... – PowerPoint PPT presentation

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Title: Crystal Growth of III/V Semiconductor Nanowires


1
Crystal Growth of III/V Semiconductor Nanowires
  • Kobi Greenberg

2
Metal organic molecular beam epitaxy (MOMBE)
3
Future applications of nanowires
4
The vapor liquid solid growth mechanism
5
TEM pictures of InP nanowires grown in our lab by
the vapor liquid solid method
6
Two ways to arrange cannon balls
7
Stacking fault formation
Wurzite nanowire With stacking fault
Zincblende nanowire
Wurzite nanowire
8
Limitations of the vapor liquid solid method
  • Difficult to eliminate stacking fault
  • Very sensitive to wafer surface effects
    Calahorra, Greenberg et al. nanotechnology 2012

9
The selective area vapor liquid solid growth
method
10
TEM pictures of InP nanowires grown in our lab by
selective area vapor liquid solid method no
stacking faults
11
Advantages of the selective area vapor liquid
solid method
  • Easy to eliminate stacking fault in InP nanowires
  • not sensitive to wafer surface effects
  • Predictable growth rate

12
Fabrication
Wafer cleaning
Si3N4 deposition
Electron sensitive resist coating
Electron beam lithography development BOE
13
(No Transcript)
14
nanowire heterostuctures important for device
applications
  • conventional layers of materials having different
    lattice constant cannot be grown on top of each
    other as single crystals.
  • Due to their small dimensions, a stack of
    materials with different lattice constants can be
    grown as a single crystal

15
Heterostructure analysis by EDX and STEM HAADF
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2
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Summary
  • Selective area vapor liquid solid is the method
    of choice for defect free nanowire growth.
  • Heterostructures of InP and GaP having 7.7
    lattice mismatch were demonstrated.
  • Method will be implemented for other materials
    such as GaAs, GaP,InAs and their heterostuctures.

17
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