Communication Systems and Microsystems Lab. G.Lissorgues / Assoc. Prof. JL. Polleux / Assist. Prof

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Communication Systems and Microsystems
Lab.G.Lissorgues / Assoc. Prof.JL. Polleux /
Assist. Prof
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ESIEE ESYCOM

• Outline of the presentation
• Short presentation of ESIEE
• The Service for Microelectronics and Microsystems
• ESYCOM Laboratory
• Focus on RF MEMS activities
• Focus on Photonics and Microwaves activities

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• Short presentation of ESIEE
• (4 slides)

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Short presentation of ESIEE

• EDUCATION
• ESIEE Center for scientific and engineering
  education, created in 1904, depending on the
  Paris Chamber of Commerce and Industry (CCIP)
• Undergraduate (ESTE) and graduate (ESIEE) degree
  programs
• 5 specialities in the engineer courses
• Computer Science
• Design and Control of Industrial systems
• Electronics and Microelectronics
• Signal Processing and Telecommunications
• System-on-chip Design (Sophia-Antipolis)

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Short presentation of ESIEE

• EDUCATION
• Some figures
• 85 faculty members
• 25 PhD students
• 120 graduated students (engineers) /year
• International partnerships
• Ex European Network for Training and Research in
  Electrical Engineering (ENTREE)
• gt 60 of the students have spent at least 3
  months abroad (Europe, USA, Canada, Japan,
  Singapore, South Africa )
• Local partnerships
• Polytechnicum Marne-La-Vallée (with the
  University)

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Short presentation of ESIEE

• RESEARCH
• 6 Laboratories (4 technical Labs)
• Computer Algorithms and Architectures
• Design and Control of Industrial systems
• Electronics and Microelectronics
• Signal Processing and Telecommunications
• Languages and Management
• Modelling and Numerical simulations
• Academic partnerships
• PFM research focused on Microsystems
• ESYCOM (ESIEE, UMLV, CNAM) Communication
  circuits, Systems, and Microsystems
• Pôle Imagerie (ESIEE, UMLV, INA, ENPC, IGN,
  ENSG) imaging research

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Short presentation of ESIEE

• RESEARCH
• Fields of interest (based on the technical Labs)
• Micro technologies and Microsystems
• Digital and analogue integrated circuits
• HF, microwave, and optical devices
• Digital radio communication circuits and systems
• Signal and speech processing
• Discrete structures and imaging (focus on medical
  and biological imaging)
• Digital architectures design
• Modelling and optimisation, statistical models
• Embedded systems
• Hybrid system modelling and control

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• The Service for Microelectronics and
  Microsystems
• (3 slides)

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The Service for Microelectronics and Microsystems

• ESIEE Group Silicon Fab
• Created in 1984
• Services proposed
• Prototyping
• Process development
• Microsystems fabrication
• Back end facilities
• Low volume production
• 300m² class 100 to 1000 clean room
• 8 full time Engineers and Technicians
• Wafer size 100mm (up to 150mm if required)
• Various substrates (Si, glass, Al2O3, AFK502)

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The Service for Microelectronics and Microsystems

• ESIEE Group Silicon Fab
• Fields of interest
• Conception, fabrication and characterisation of
  MEMS
• Micro-sensors, micro-actuators, dedicated to
  Optics, RF, Fluidics
• Development and optimisation of technological
  specific process steps
• Associated Integrated electronics

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The Service for Microelectronics and Microsystems

• ESIEE Group Silicon Fab
• Available Processes and Equipments
• Dry and wet oxidation, doping furnaces
• LPCVD / PECVD film deposition (PolySi, SiO2,
  Si3N4)
• PVD metal deposition (sputtering and electron
  beam evaporator) Au, Cr, Al
• UV photolithography, single and double side
• Wet etching
• Dry etching (DRIE, RIE Cl or F)
• Back-end and packaging wafer cutting,
• wedge and ball bonding, wafer anodic bonding

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• ESYCOM
• (6 slides)

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ESYCOM

• Communication Systems and Microsystems Team
• Director C. Rumelhard
• ESYCOM is a laboratory with staff and means
  overlapping 3 entities located in the eastern
  part of Paris
• - ESIEE (Engineering School)
• - University of Marne La Vallée
• - CNAM
• Total size
• Phd students 20
• Researchers technical staff 30 members

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ESYCOM

• Background
• 1994 creation of DEA in High Frequency
  Communication
• Systems, in cooperation with UMLV, CNAM, ESIEE,
  INT Evry
• 1996 creation of High Frequency Electronic Pole
  with CNAM, ESIEE, UMLV within the  Polytechnicum
  de Marne la Vallée 
• Jan. 1999 Label from the French Research
  Department for 2 years as équipe daccueil
  (welcoming team) n 2552 called Laboratoire
  Systèmes de Communication
• Jan. 2001 renewal of the label for 2 years
• Beginning of 2003, discussions and association
  with the team of Microsystems and
  Micro-technologies from ESIEE

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(No Transcript)
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ESYCOM Research topics
Item 1  Electromagnetism and applications -
Numerical Modelling - Propagation and EM
compatibility - Antennas and networks (RFID
applications, EBG applications) Item 2 
Wireless digital communications -
Transmit/Receive architectures - Signal and
images coding, information theory applications
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ESYCOM Research topics
Item 3  Microsystems and micro-technologies -
Sensors, actuators and associated electronics -
RF and optical MEMS Item 4  Photonics and
microwaves - Photonic and microwave components
- Microwave links in optics and monolithic
circuits
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ESYCOM

• Technical Platforms
• High frequency measurement facilities for
• Digital communication circuits and systems using
  RF, microwave, or optical carriers
• Opto-microwave test bench up to 18 GHz
• On-wafer VNA probe station up to 40 GHz
• Radiation, propagation, and material measurements
• Anechoic chamber (900 MHz 18 GHz)
• DSP (Texas) application platform
• CAD tools
• including ADS, HFSS, Ensemble for RF
• ANSYS for MEMS

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• RF MEMS

Team manager G. Lissorgues, ESIEE
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RF MEMS

• RESEARCH TOPICS
• Tunable passive micro-components, for
  reconfigurable radiocommunication applications
• Micro-capacitors
• Micro-inductors
• Specifications tuning ratio 10, Freq. Range
  1-10 GHz
• Applications tunable filters, matching networks,
  RF power detection
• MEMS based on transmission lines on Silicon
• Application to low losses microwave filters and
  antenna
• FBAR resonators

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RF MEMS

• PREVIOUS WORK
• First work on RF MEMS initiated with TAS on the
  Micro-modulator project (1997-2001)
• Application field wireless sensor networks
• Frequency range carrier between 1-2GHz
• Principle micro mechanical mixing using 2
  tunable coupled capacitors

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RF MEMS

• PREVIOUS WORK
• The Micro-modulator project
• Carrier 1-2GHz
• low data rate (100bps) modulation _at_ 10kHz
• SOI/glass process, with CPW access for VNA
  measurements
• C(V²) and spectrum validation, typ. variation 0.5
  to 1pF

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RF MEMS

• Tunable passive micro-components
• Micro-capacitors
• 1 PhD student working for TAS
• Technology currently under development at EPFL
• Principle mobile metallic conductor moving
  between fragmented fixed electrodes
• Expected ratiogt10 with C1pF
• 3D technology using Si etching and sacrificial
  layers
• Good RF power handling capabilities

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RF MEMS

• Tunable passive micro-components
• Micro-capacitors

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RF MEMS

• Tunable passive micro-components
• Tunable micro-inductors
• 1 PhD student working with TAS / Ministry of
  Defense
• Technology currently under development at ESIEE
• Principle control of the magnetic coupling
  coefficient k between 2 inductive circuits
• Electrostatic actuation of beam or membrane
• Mechanical displacement (15µm) of a loop above an
  inductor

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RF MEMS

• Tunable passive micro-components
• Tunable micro-inductors
• First prototype (VNA measurements 0.5 5GHz)
• ratio 2 with L tuned from 1nH to 0.5nH

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RF MEMS

• MEMS based transmission lines on Silicon
• Inverted microstrip lines on silicon
• Frequency range 1 40GHz
• Typ. Attenuation lt0.5dB/cm _at_ 30GHz
• (depending on the air gap)
• Low cost Si/Glass technology developed at ESIEE

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RF MEMS

• MEMS based transmission lines on Silicon
• Application to low loss microwave filters _at_30GHz
• Distributed Low-pass filter
• Coupled lines Band-pass filter

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RF MEMS

• Perspectives in RF MEMS _at_ ESIEE - ESYCOM
• Include the tunable components into
  reconfigurable radio applications adaptative
  matching network, tunable delay lines, tunable
  filters
• Develop a specific high RF power test bench for
  MEMS (Input 30 dBm)
• New functions power detection / limitation
• New applications around antennas integrated
  antenna on chip, controllable reflectarray,
  rectifying antenna
• Work within OPTIMISTIC project on new optical
  interconnections

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• Photonics and Microwaves

J.L. Polleux, ESIEE Team manager C. Rumelhard,
CNAM
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Photonics and microwaves

• RESEARCH TOPICS
• Microwave circuits in photonic links
• Modulator with rejection of LO and lower RF band
• Narrow band opto-microwave detection circuits
• Study of ad hoc networks in Ultra Wide Band
• Ultra Wide Band circuits
• Photonic and microwave components
• Optical Modulator Structures
• Lateral Optical Resonant Cavities
• Heterojunction Bipolar Phototransistors
  (InGaP/GaAs, InP/InGaAs, Si/SiGe)

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Photonics and microwaves

• RESEARCH TOPICS
• Simulation of optical links in microwaves
• Simulation with ADS Models for lasers, optical
  fibres, photodiodes, phototransistors
• Amplitude and phase noise around microwave
  signals
• New method of modulation for Radio over Fibre
• Experimental Measurements and Characterisation
• Generation of microwaves with beating of lasers

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Photonics and microwaves

• Microwave phototransistors the SiGe HPT
• Opto amplifier InP/GaInAs at 30 GHz (1,55 µm)
• Opto-microwave Experimental Set-Up

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Photonics and microwaves
Microwave Phototransistors

• Physical modelling of HPT and materials
• Hydrodynamic balance energy and drift-diffusion
  models
• Technological development contribution
• HPT-based circuit design
• GaInP / GaAs (0,85 µm), Thales Technology
• InP / GaInAs (1,55 µm), CNET then OPTO/Alcatel
• SiGe HPT (0,9 µm) ESYCOM / Ulm Univ., Germ.

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Photonics and microwaves
Physical Model for Strained SiGe layers

• 2D drift-diffusion simulator
• Influence of strain on parameters

• No mobility model as it is anisotropic

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Photonics and microwaves
1st SiGe HPT MWP 2003 Budapest
SiGe HPT

• Square ring emitter contact
• Symmetric base contact

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Photonics and microwaves
SiGe HPT

• Advantages of SiGe for photodetection
• Enlargement of the wavelength detection range
  (0.8 to 1µm)
• Leverage for frequencies performances vs.
  dimensions
• Ease the optical coupling

Pure HBT fT30GHz (1µm emitter width) HPT
fT20.4GHz (despite 10x10µm² size)
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Photonics and microwaves
SiGe HPT
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Photonics and microwaves

• Microwave phototransistors the SiGe HPT
• Opto amplifier InP/GaInAs at 30 GHz (1,55 µm)
• Opto-microwave Experimental Set-Up

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Photonics and microwaves
Opto amplifier InP/GaInAs at 30 GHz (1,55 µm)

• InP/InGaAs technology from Opto/Alcatel
• Vertical illuminated HPT technology
• Pure electrical HBT technology fmax65GHz
• The HPT as a 3-Port
• Transferring the matching concept to
  phototransistors
• Specifying the base load impedance conditions

fT70GHz fmax30GHz
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Photonics and microwaves
Opto amplifier InP/GaInAs at 30 GHz (1,55 µm)

• Opto-microwave modelling the HPT as a 3-port !
• Opto-microwave power gain and matching circuits

• Opto-microwave power gain
• (Model and definitions for the analysis of HPTs
  Application to InP and SiGe phototransistors,
  NEFERTITI Workshop on Phototransistors / MWP 2003)

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Photonics and microwaves
Opto amplifier InP/GaInAs at 30 GHz (1,55 µm)
J.L. Polleux et al., Optimization of InP/InGaAs
HPTs gain  Design and Realization of an
Opto-microwave Monolithic Amplifier, in IEEE
Trans. on MTT, pp. 871- 881, March 2004.
fT70GHz fmax30GHz
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Photonics and microwaves
Opto-microwave Experimental Set-Up

• Generation of microwaves with beating of lasers
• External cavity laser at 940nm
• SiGe HPT or InP/InGaAs measurements
• Optomicrowave circuits measurements
• Better accuracy in frequency than transient short
  impulse techniques
• Novel modulation techniques

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Photonics and microwaves

• Microwave phototransistors the SiGe HPT
• Opto amplifier InP/GaInAs at 30 GHz (1,55 µm)
• Opto-microwave Experimental Set-Up

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Photonics and microwaves
Opto-microwave Experimental Set-Up
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Photonics and microwaves- perspectives -
Item 4  Photonics and microwaves - Microwave
links in optics and monolithic circuits -
Photonic and microwave components
Photonic integrated circuits
Item 3  Microsystems and micro-technologies -
RF and optical MEMS
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Silicon Photonic CrystalsCollaboration of ESIEE
with IEF CNRS, Univ. Orsay

• Development of technological process for small
  feature sizes
• Holes of 0,2 ?m in diameter spaced by 0,3 ?m
  (depth is 5 ?m)
• DRIE (ICP) etching. Combination of bosch
  process and cryogenic.

1D crystal
2D crystals
Optical Resonant Lateral Cavity
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Photonics and microwaves- perspectives -

• Photonics and microwaves components
• New optical interconnections OPTIMISTIC
  project
• Developping an optical Silicon Technology for the
  0.6-1µm wavelength range
• Waveguides SiO2 not Si polymer
• Photonic crystals and Resonant cavities for
• Optical modulation
• Detection enhancement
• BCB Motherboard Multi-chip Integration
• LED Si sources French South African Technical
  Institute in Electronics of ESIEE Group

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Communication Systems and Microsystems
Lab.G.Lissorgues / Assoc. Prof.JL. Polleux /
Assist. Prof