Title: Solar Cells
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7Solar Cells
- Early development of solar tech. starts
- in the 1960s
- Conversion of sunlight to electricity
- by photovoltaic effect
- In 1974 only 6 private homes in North
- America were entirely heated by solar
- power (increasing rapidly since 1979
- energy crisis)
- Photovoltaic production growth 40
- per year since 2000
8Nellis Solar Power Plant, Nevada
- The second larger solar power plant
- in North America
- Located in Nellis Air Force Base, Nevada,
- northeast of Las Vegas
- Generate 25 M Kw-h, supply 25 of the
- power used in the base, more than
- 12,000 military and civilians at Nellis
- Contain 70,000 solar panels,
9Theory
- Photovoltaics (PV) a method of generating
electrical powere by converting solar radiation - into direct current electricity using
semiconductor exhibiting photovoltaic effect - Photovoltaic effect creation of a voltage (or
corresponding electric current) in a material - upon exposure of light. Generated electrons are
transferred from valence to conduction bands, - resulting in the buildup of a voltage between
two electrodes
10PN Junction (Diode)
- When N-type and P-type dopants are introduced
side-by-side in a semiconductor, a PN junction or
a diode is formed.
11Depletion Region
- As free electrons and holes diffuse across the
junction, a region of fixed ions is left behind.
This region is known as the depletion region.
CH2 Basic Physics of Semiconductors
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12Current Flow Across Junction Drift
- The fixed ions in depletion region create an
electric field that results in a drift current. - At equilibrium, the drift current flowing in one
direction cancels out the diffusion current
flowing in the opposite direction, creating a net
current of zero.
CH2 Basic Physics of Semiconductors
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13Diode in Reverse Bias
- When the N-type region of a diode is connected to
a higher potential than the P-type region, the
diode is under reverse bias, which results in
wider depletion region and larger built-in
electric field across the junction.
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14Diode in Forward Bias
- When the N-type region of a diode is at a lower
potential than the P-type region, the diode is in
forward bias. - The depletion width is shortened and the built-in
electric field decreased.
CH2 Basic Physics of Semiconductors
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CH2 Basic Physics of Semiconductors
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15Diode in Forward Bias
- Minority charge profile should not be constant
along the x-axis otherwise, there is no
concentration gradient and no diffusion current. - Recombination of the minority carriers with the
majority carriers accounts for the dropping of
minority carriers as they go deep into the P or N
region.
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16I-V (current-voltage) characteristic of a p-n
junction
- The current and voltage relationship of a PN
junction is exponential in forward bias region,
and relatively constant in reverse bias region.
CH2 Basic Physics of Semiconductors
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CH2 Basic Physics of Semiconductors
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20Light-emitting diode (LED)
- A semiconductor light source
- Introduced as a practical electronic component in
1962 - Earlier LED with red light, modern LED available
- across visible, UV and infrared wavelengths
- The first blue LED were made in 1971
- by Jacques Pankove (GaN LED) at RCA Lab.
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21Applications of LED
- Advantages over incandescent light lower energy
consumption, longer life time, improved
robustness, small size, faster switching - Compared to fluorescent lamp for room lighting
relatively expensive, require more precise
current and heat management - Used for used as indicator lamps, aviation
lighting, traffic signals, lighting, automotive
lighting
CH2 Basic Physics of Semiconductors
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CH2 Basic Physics of Semiconductors
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22Applications of LED
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23Operations of LED
- Electroluminescence effect
- electron-hole recombination
- release photons,
- the color is determined
- by the energy gap
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24Operations of LED
- Electroluminescence effect
- electron-hole recombination
- release photons,
- the color is determined
- by the energy gap
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