3D Circuit Integration Technology for Multiproject Fabrication - PowerPoint PPT Presentation

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3D Circuit Integration Technology for Multiproject Fabrication

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3D Circuit Integration Technology for Multiproject Fabrication Program Kickoff 7 April 2000 L-325, MIT Lincoln Laboratory Introduction Original Program Review – PowerPoint PPT presentation

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Title: 3D Circuit Integration Technology for Multiproject Fabrication


1
3D Circuit Integration Technology for
Multiproject Fabrication
Program Kickoff 7 April 2000 L-325, MIT Lincoln
Laboratory
Break and Camera Demonstration
2
3D Circuit Integration Technology for
Multiproject Fabrication
TREX Enterprises System Integration New Research
in 3D Architectures and Systems
Summary of Prior Results
Lisa McIlrath 840-900
Lisa McIlrath 900-930
New Program Overview
Steve Hawley 930-950
High Resolution Camera Design
Algorithms for Activity Detection with 3D Sensors
Victor Lum 950-1005
Break and Camera Demonstration
3
N1 Test Reticle Layout
4
N1 3D Photodiode Active Pixel
  • 10mm via
  • 32mm x 37mm
  • pixel area

5
3D Transfer/Via SEMs - 9/98
Deep and shallow 10mm vias - top view
6
N1 Via Chain Measurements - 9/98
7
N1 Diode Measurements - 9/98
8
N2 Test Reticle Layout
9
6 mm via on 150mm wafer -- 7/23/99
Aluminum
Oxide
Adhesive
10
Photomicrograph of Imager
Metal-1 Pad
3D Via
11
N2 2D 3D Ring Oscillator Measurements
12
First 3D 64x64 Imager Results - 9/99
Dark Image
Room Light
Bright Light
13
NU - LL 3D Technology Transfer
  • Wafer-to-wafer bonding process under development
    at Lincoln Laboratory
  • Traveller of NU 3D process delivered to Lincoln
  • Complete devices from North 3 and 4 runs
  • Transfer Keith Warner to Lincoln - (task
    completed)

14
3D Pixel Design Free-Running Sampled Oscillator
15
3D 2D Pixel Layouts
MOSIS HP 0.5mm process 30mm x 30mm pixel
3D SOI-CMOS 0.8mm process 2-layer 45mm x 45mm
pixel
16
Circuits / Systems Design Status
Pixel-Parallel A/D Imager Design -- Tests /
Design Revs Complete
40nW / pixel _at_ 3.3V, 0.1 Residual Fixed
Pattern Noise
17
Circuits / Systems Design Status
3rd Layer Design Taped Out 11/1/99
  • On-chip VCO with 216 (65536) bit range
  • On-chip pixel-parallel 1st stage low pass
    filtering
  • Programmable resolution / dynamic range

18
Circuits / Systems Design
Systems Environment
  • Camera demo system modified for 256 x 256 imager
    compatibility and interface upgrade
  • Research in future smart sensor designs
  • Video tracking demo (V. Lum, M-Eng thesis)
  • Video feedback control architectures (A. Aina,
    PhD thesis)

19
Testbed DemonstrationCamera System
(Demo Setup in Office)
20
Activity Monitoring
Current image
Background model
Detected objects
Object Tracking Using Adaptive Background Mixture
Models Courtesy Chris Stauffer Eric Grimson
MIT Artificial Intelligence Laboratory
21
Analog Memory with Digital Feedback
Change detector
22
Multimode memory module
Pixel Input
active
F.D.
Monitor
enable
VCO
Charge Pump
active
F.D.
Monitor
enable
VCO
Charge Pump
Problem VCO tracks new values faster than
monitor detects them
23
Compensated Memory
Solution Integrate a low pass filter into the
loop
active
Pixel Input
F.D.
Filter
enable
VCO
Charge Pump
24
Creating the Filter
Edge Counter
active
reset
enable
Compare Logic
Edge Counter
reset
Pixel Input
F.D.
Edge Counter
reset
VCO
Charge Pump
25
Detecting Activity
Activity is determined by the temporal distance
between pairs of unmatched edges
Second unmatched edge
Pixel Bitstream
VCO output
Input frequency change
26
The Enabling Technology
  • Better circuit / interconnect ratio
  • Unrestricted vertical interconnections between
    layers
  • Low digital system power PCV2f

SOI CMOS
3D
27
Path to Industrialization
Goals
  • Industry-Standard State-of-the-Art SOI/CMOS
    Process
  • Automated Wafer Align / Bonding / Interconnect
    Patterning
  • Phase I Infrastructure Development
  • Phase II Small Volume 3D Processing Center for
    Multi-Project Runs
  • Phase III High Volume Manufacturing

28
Phase I Plan (25 months)
  • Process Development
  • 0.8mm SOI/CMOS 0.18, 0.25 mm FDSOI
  • Reliable low temperature oxide bonding
  • High aspect ratio Tungsten plug fill
  • Systems Development
  • High Definition Imager Platform
  • 3D-compatible near-IR imaging technique
  • 3D CAD tools packaging

29
Systems Design Schedule
30
0.25mm FDSOI Test Pixel
14mm x 14mm (or less)
31
High-Resolution Near-IR Imager
  • Explore best method for III-V incorporation with
    automated 3D process technology
  • Proposal accepted from C. Fonstad, MIT, for
    selective InGaAs in Si growth
  • Initial photodiode array lots for investigation
  • Imager design unchanged
  • Compatible with basic platform systems demo

32
3D CAD Tools
  • Develop minimal toolset for 3D cell layout,
    design rule checking, netlist extraction
  • Interface with commonly available tools, e.g.,
    Magic, L-Edit, Spice
  • Platform independent
  • Remove major obstacle for new users in Phase II
  • Plan
  • Build on prior work developed on Cadence tools
  • Negotiate distribution agreement with Si-valley
    software vendor(s).

33
High Definition Imager Platform
  • Interface 3D camera with SXGA (1024x1280) display
  • Identify military users
  • Human factors issues
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