ASTRO-E%20(I,II)%20XIS%20vs.%20ASCA%20SIS

1
The X-ray Imaging Spectrometers (XIS) are four
sets of X-ray CCD cameras on board the lost
ASTRO-E satellite. The CCD chips are CCID17
manufactured at the MIT Lincoln Laboratory, of
which imaging area is 24mm squared and contains
1M pixels in it. The chips are cooled down to
90oC with thermo-electric coolers. The XIS
cameras are installed on the focal plane of the
X-Ray Telescopes (XRT), working as an X-ray
imager with FOV of 17 squared. They also provide
spectral information for 0.4-12keV X-rays with
energy resolution of 130-140eV at 5.9keV. One of
the advantages of the ASTRO-E XIS system is a
thick depletion layer of 70-80 mm, which accounts
for the net effective area of about 800cm2 at
7keV. In addition to the camera part, Analog
Electronics (AE) and Digital Electronics (DE) are
equipped in order to drive the CCDs and to
process their outputs, which enables us to do
flexible operation of the XIS system. We are
going to rebuild the XIS for ASTRO-E II
satellite, which will be launched on 2005. The
XIS design will be almost the same as that for
the ASTRO-E.
The X-ray Imaging Spectrometers, XIS, on ASTRO-E
II
K. Koyama1, and the XIS team1,2,3,4,5 1Kyoto
University, 2Osaka University, 3ISAS, 4MIT,
5Ehime University
ASTRO-E (I,II) XIS vs. ASCA SIS
ASTRO-E XIS Small Gallery

ASCA SIS ASTRO-E XIS
CCD type CCID7(FT/3phase) FI CCID17(FT/3phase) FI
No. of Cameras 2 4
No. of CCDs per Camera 4 1
No. of Pixels/CCD 420(H) x 422(V) 1024(H) x 1026(V)
Pixel Size 27mm x 27mm 24mm x 24mm
Effective Depletion Depth 26-33mm 70-80mm
XRT Effective Area_at_1.5keV 650 cm2/2SIS 2200 cm2/4XIS
XRT Effective Area_at_7keV 300 cm2/2SIS 1400 cm2/4XIS
XRT F.L. 3.5 m 4.75 m
F.O.V. 21.6' x 21.6' 17.4' x 17.4'
Dark Current(e-/s/pixel) at Operation 0.2_at_launch, 2_at_1000day lt0.1
Readout Noise 5 e- rms 2-3 e- rms
CCD Operation Temperature -62oC -90oC
Annealing Mode Available(0oC20oC) Available(20oC)
Calibration Source No Fe55 (Always on)
Clocking Mode Normal/P-Sum Normal/P-Sum/Burst
Window (Partial) Readout No Available
Exposure Time 4s(1CCD Mode)/ 16s(4CCD Mode) 8s(Normal Mode) / lt8s(Burst Mode)
Dark Levels in the DE one value for 16 x 16 pixels one value for each pixel
Event Data Format Faint/Bright/Fast 5x5/3x3/2x2/Timing
Telem. Capacity (events/s) bitrate H 128 /2SIS_at_Faint Mode 1500 /4XIS_at_3x3 Mode
XIS Camera The bottom part CCD chip?TEC. The
upper part OBF, door opening system, pressure
sensor, valve, hood.
Characteristics of ASTRO-E XIS
XIS Camera Base Assembly
XIS CCD Chip
XIS Cameras Just Installed on ASTRO-E
ASTRO-E (I,II) XIS vs XMM EPIC and Chandra ACIS
Ground Calibration of ASTRO-E XIS
55Fe Spectrum FWHM 135eV_at_5.9keV
Spectral Profile Model Escape, Sub-Peak, and
Tail Components.

• ASTRO-E XISXRT have Highest Effective Area at
  Above 7 keV
• Imaging Spectroscopy for Diffuse Sources
• Smooth Connection with Hard X-ray Spectrum
  Obtained with the HXD

Quantum Efficiency QE model based on the measured
efficiencies.
E-PH Relation fitted with a straight line with
offset of 0.9ch (3eV) . Energy scale is
determined within the error of 10eV.
References K. Hayashida et al., 2000, SPIE 4012,
p.123-136. and reference therein.
K. Imanishi et al., 2000, SPIE4012, p.137-144.
and reference therein.
Question, Contact on this Poster K. Hayashida
(Osaka University) e-mail hayasida_at_ess.sci.osaka-
u.ac.jp